The influence of boron doping level on quality and stability of diamond film on Ti substrate von Wei, J.J., Li, Ch.M., Gao, X.H., Hei, L.F., Lvun, F.X.

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Effect of arc characteristics on the properties of large size diamond wafer prepared by DC arc plasma jet CVD von Li, C.M., Zhu, R.H., Liu, J.L., Chen, L.X., Guo, J.C., Hua, C.Y., Hei, L.F., Wei, J.J., Wang, J.J., Feng, Z.H., Guo, H., Lu, F.X.

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Mechanical properties of ultrananocrystalline diamond films modified by hydrogen concentration in deposition atmosphere von Liu, J., Hei, L.F., Chen, G.C., Li, C.M., Song, J.H., Lu, F.X.

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High-rate homoepitaxial growth of CVD single crystal diamond by dc arc plasma jet at blow-down (open cycle) mode von Liu, J., Hei, L.F., Song, J.H., Li, C.M., Tang, W.Z., Chen, G.C., Lu, F.X.

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Effect of atomic hydrogen bombardment on the surface conductivity of polycrystalline diamond films von Liu, J.L., Li, C.M., Guo, J.C., Zhu, R.H., Chen, L.X., Wei, J.J., Hei, L.F., Wang, J.J., Feng, Z.H., Guo, H., Lv, F.X.

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RF characteristic of MESFET on H-terminated DC arc jet CVD diamond film von Liu, J.L., Li, C.M., Zhu, R.H., Guo, J.C., Chen, L.X., Wei, J.J., Hei, L.F., Wang, J.J., Feng, Z.H., Guo, H., Lv, F.X.

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Nucleation and growth surface conductivity of H-terminated diamond films prepared by DC arc jet CVD von Liu, J.L., Li, C.M., Chen, L.X., Wei, J.J., Hei, L.F., Wang, J.J., Feng, Z.H., Guo, H., Lv, F.X.

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Growth of diamond by DC Arcjet Plasma CVD: From nano-sized poly-crystal films to millimeter-sized single crystal grain von Chen, G.C., Li, B., Li, H., Lan, H., Dai, F.W., Xue, Q.J., Han, X.Q., Hei, L.F., Song, J.H., Li, C.M., Tang, W.Z., Lu, F.X.

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A compact ellipsoidal cavity type microwave plasma reactor for diamond film deposition von Li, X.J., Tang, W.Z., Wang, F.Y., Li, C.M., Hei, L.F., Lu, F.X.

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In situ observation of nucleation by optical emission spectra in CVD diamond von Chen, G.C., Li, B., Li, H., Han, X.Q., Hei, L.F., Song, J.H., Li, C.M., Tang, W.Z., Lu, F.X.

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Gas phase study and oriented self-standing diamond film fabrication in high power DC arc plasma jet CVD von Chen, G.C., Li, B., Lan, H., Dai, F.W., Zhou, Z.Y., Askari, J., Song, J.H., Hei, L.F., Li, C.M., Tang, W.Z., Lu, F.X.

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Erosion difference of growth and nucleation sides of free-standing diamond films prepared by DC arc plasma jet CVD von Zhu, R.H., Li, C.M., Chen, L.X., Liu, J.L., Wei, J.J., Hei, L.F., Guo, H.

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Influence of seeding pre-treatments on mechanical properties of ultrananocrystalline diamond films on silicon and Si3N4 substrates von Liu, J., Hei, L.F., Chen, G.C., Li, C.M., Song, J.H., Tang, W.Z., Lu, F.X.

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Growth feature of layered self-standing diamond films by DC arc plasma jet CVD von Chen, G.C., Lan, H., Li, B., Dai, F.W., Askari, S.J., Song, J.H., Hei, L.F., Tang, W.Z., Lu, F.X.

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China statistics of extracorporeal life support in 2018 von Li, C L, Hou, X T, Hei, F L, Qiu, H B, Li, A, Tong, Z H, Li, Y M, Sun, R Q, Liu, B, Jiang, Y

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Fabrication and characterizations of large homoepitaxial single crystal diamond grown by DC arc plasma jet CVD von Hei, L.F., Liu, J., Li, C.M., Song, J.H., Tang, W.Z., Lu, F.X.

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An amazing semiconductor choice for high-frequency FET: H-terminated polycrystalline diamond film prepared by DC arc jet CVD von Li, C. M., Liu, J. L., Chen, L. X., Wei, J. J., Hei, L. F., Wang, J. J., Feng, Z. H., Guo3, H.

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Application of CVD nanocrystalline diamond films to cemented carbide drills von Meng, X.M., Tang, W.Z., Hei, L.F., Li, C.M., Askari, S.J., Chen, G.C., Lu, F.X.

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Fracture strength of two-step pretreated and diamond coated cemented carbide microdrills von Geng, C.L., Tang, W.Z., Hei, L.F., Liu, S.T., Lu, F.X.

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Development of extracorporeal circulation in China von Hei, F L, Jiang, Y, Hou, X T

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