Structural Identification of Ginsenoside Based on UPLC-QTOF-MS of Black Ginseng ( Panax Ginseng C.A. Mayer) von Oh, Hyo-Bin, Jeong, Da-Eun, Lee, Da-Eun, Yoo, Jong-Hee, Kim, Young-Soo, Kim, Tae-Young

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Analysis of black carbon, particulate matter, and gaseous pollutants in an industrial area in Korea von Yoo, Hee-Jong, Kim, Jungkon, Yi, Seung-Muk, Zoh, Kyung-Duk

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Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks von Kwak, June Sik, Do, Young Ho, Bae, Yoon Cheol, Im, Hyun Sik, Yoo, Jong Hee, Sung, Min Gyu, Hwang, Yun Taek, Hong, Jin Pyo

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Bipolar switching properties of amorphous TiO2 thin film grown on TiN/Si substrate von Lee, Beom-Seok, Kim, Bo-Yun, Lee, Ji-Hyeon, Yoo, Jong Hee, Hong, Kwon, Nahm, Sahn

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Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide; TiO2, ZrO2, and HfO2 von Gee Kim, Wan, Gyu Sung, Min, Joo Kim, Sook, Hee Yoo, Jong, One Youn, Te, Won Oh, Jang, Nam Kim, Jung, Gu Gyun, Byung, Wan Kim, Taeh, Ho Kim, Chi, Young Byun, Jun, Kim, Won, Sig Joo, Moon, Sung Roh, Jae, Ki Park, Sung

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO2 Resistive Material Depending on the Thickness of Ti von Kim, Sook Joo, Sung, Min Gyu, Joo, Moon Sig, Kim, Wan Gee, Kim, Ja Yong, Yoo, Jong Hee, Kim, Jung Nam, Gyun, Byun Ggu, Byun, Jun Young, Roh, Jae Sung, Park, Sung Ki, Kim, Yong Soo

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Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide von Wan Gee Kim, Min Gyu Sung, Sook Joo Kim, Ja Yong Kim, Ji Won Moon, Sung Joon Yoon, Jung Nam Kim, Byung Gu Gyun, Taeh Wan Kim, Chi Ho Kim, Jun Young Byun, Won Kim, Te One Youn, Jong Hee Yoo, Jang Won Oh, Ho Joung Kim, Moon Sig Joo, Jae Sung Roh, Sung Ki Park

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In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge2Sb2Te5 von Oh, Sang Ho, Baek, Kyungjoon, Son, Sung Kyu, Song, Kyung, Oh, Jang Won, Jeon, Seung-Joon, Kim, Won, Yoo, Jong Hee, Lee, Kee Jeung

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The effect of crystallinity of HfO2 on the resistive memory switching reliability von Min Gyu Sung, Wan Gee Kim, Jong Hee Yoo, Sook Joo Kim, Jung Nam Kim, Byung Gu Gyun, Jun Young Byun, Taeh Wan Kim, Won Kim, Moon Sig Joo, Jae Sung Roh, Sung Ki Park

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In situ TEM observation of void formation and migration in phase change memory devices with confined nanoscale Ge 2 Sb 2 Te 5 von Oh, Sang Ho, Baek, Kyungjoon, Son, Sung Kyu, Song, Kyung, Oh, Jang Won, Jeon, Seung-Joon, Kim, Won, Yoo, Jong Hee, Lee, Kee Jeung

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TEM observation of void formation and migration in phase change memory devices with confined nanoscale GeSbTe von Oh, Sang Ho, Baek, Kyungjoon, Son, Sung Kyu, Song, Kyung, Oh, Jang Won, Jeon, Seung-Joon, Kim, Won, Yoo, Jong Hee, Lee, Kee Jeung

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Bipolar switching properties of amorphous TiO sub(2) thin film grown on TiN/Si substrate von Lee, Beom-Seok, Kim, Bo-Yun, Lee, Ji-Hyeon, Yoo, Jong Hee, Hong, Kwon, Nahm, Sahn

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Breeding of Yellow Small-Type Phalaenopsis ‘Yellow Scent’ with Fragrance von An, Hye Ryun, Kwon, Oh Keun, Lee, Su Young, Park, Pue Hee, Park, Pil Man, Choi, Inchan, Lee, Hongseok, Yoo, Jong Hee

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Roles of interfacial TiO x N 1 − x layer and TiN electrode on bipolar resistive switching in TiN / TiO 2 / TiN frameworks von Kwak, June Sik, Do, Young Ho, Bae, Yoon Cheol, Im, Hyun Sik, Yoo, Jong Hee, Sung, Min Gyu, Hwang, Yun Taek, Hong, Jin Pyo

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Publisher’s Note: Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide: TiO2, ZrO2, and HfO2 [J. Electrochem. Soc.,... von Kim, Wan Gee, Sung, Min Gyu, Kim, Sook Joo, Yoo, Jong Hee, Youn, Te One, Oh, Jang Won, Kim, Jung Nam, Gyun, Byung Gu, Kim, Taeh Wan, Kim, Chi Ho, Byun, Jun Young, Kim, Won, Joo, Moon Sig, Roh, Jae Sung, Park, Sung Ki

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Microstructure and Resistive Switching Behavior of Amorphous Pr0.7Ca0.3MnO3 Films Grown under Various Oxygen Pressures von Choi, Kyu Bum, Lee, Beom-Seok, Joung, Mi-Ri, Yoo, Jong Hee, Kim, Won, Nahm, Sahn

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti von Kim, Sook Joo, Sung, Min Gyu, Joo, Moon Sig, Kim, Wan Gee, Kim, Ja Yong, Yoo, Jong Hee, Kim, Jung Nam, Gyun, Byun Ggu, Byun, Jun Young, Roh, Jae Sung, Park, Sung Ki, Kim, Yong Soo

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Characteristics and the Model of Resistive Random Access Memory Switching of the Ti/TiO 2 Resistive Material Depending on the Thickness of Ti von Kim, Sook Joo, Sung, Min Gyu, Joo, Moon Sig, Kim, Wan Gee, Kim, Ja Yong, Yoo, Jong Hee, Kim, Jung Nam, Gyun, Byun Ggu, Byun, Jun Young, Roh, Jae Sung, Park, Sung Ki, Kim, Yong Soo

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향기 있는 황색 소형 호접란 ‘옐로우센트’ 육성 von 안혜련(Hye Ryun An), 권오근(Oh Keun Kwon), 이수영(Su Young Lee), 박부희(Pue Hee Park), 박필만(Pil Man Park), 최인찬(Inchan Choi), 이홍석(Hongseok Lee), 유종희(Jong Hee Yoo)

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Effect of HfO2 Crystallinity on Device Characteristics and Reliability for Resistance Random Access Memory von Kim, Ja-Yong, Yoo, Jong-Hee, Youn, Tae-One, Kim, Sook-Joo, Kim, Jung-Nam, Lee, Sung-Hoon, Joo, Moon-Sig, Roh, Jae-Sung, Park, Sung-Ki

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