Spatio-time-resolved cathodoluminescence studies of wide-bandgap group-III nitride semiconductors von Chichibu, Shigefusa F., Ishikawa, Yoichi, Hazu, Kouji, Furusawa, Kentaro

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Ammonothermal Crystal Growth of GaN Using an NH4F Mineralizer von Bao, Quanxi, Saito, Makoto, Hazu, Kouji, Furusawa, Kentaro, Kagamitani, Yuji, Kayano, Rinzo, Tomida, Daisuke, Qiao, Kun, Ishiguro, Tohru, Yokoyama, Chiaki, Chichibu, Shigefusa F

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Ammonothermal growth of GaN on a self-nucleated GaN seed crystal von Bao, Quanxi, Saito, Makoto, Hazu, Kouji, Kagamitani, Yuji, Kurimoto, Kouhei, Tomida, Daisuke, Qiao, Kun, Ishiguro, Tohru, Yokoyama, Chiaki, Chichibu, Shigefusa F.

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Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-Doped TiO2 Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method von Hazu, Kouji, Fouda, Aly, Nakayama, Tokuyuki, Tanaka, Akikazu, Chichibu, Shigefusa F

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Time-resolved luminescence studies on AlN and high AlN mole fraction AlGaN alloys von Chichibu, Shigefusa F., Onuma, Takeyoshi, Hazu, Kouji, Uedono, Akira

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Structural and optical properties of AlN grown by solid source solution growth method von Kangawa, Yoshihiro, Suetsugu, Hiroshige, Knetzger, Michael, Meissner, Elke, Hazu, Kouji, Chichibu, Shigefusa F., Kajiwara, Takashi, Tanaka, Satoru, Iwasaki, Yosuke, Kakimoto, Koichi

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Helicon-Wave-Excited-Plasma Sputtering as an Expandable Epitaxy Method for Planar Semiconductor Thin Films von Amaike, Hiroaki, Hazu, Kouji, Sawai, Yutaka, Chichibu, Shigefusa F.

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Time-Resolved Photoluminescence of a Two-Dimensional Electron Gas in an Al0.2Ga0.8N/GaN Heterostructure Fabricated on Ammonothermal GaN Substrates von Chichibu, Shigefusa F, Hazu, Kouji, Kagamitani, Yuji, Onuma, Takeyoshi, Ehrentraut, Dirk, Fukuda, Tsuguo, Ishiguro, Tohru

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Spatio-Time-Resolved Cathodoluminescence Studies on Freestanding GaN Substrates Grown by Hydride Vapor Phase Epitaxy von Chichibu, Shigefusa F, Ishikawa, Yoichi, Tashiro, Masanori, Hazu, Kouji, Furusawa, Kentaro, Namirta, Hideo, Nagao, Satoru, Fujito, Kenji, Uedono, Akira

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Optical polarization properties of m-plane AlxGa_1-xN epitaxial films grown on m-plane freestanding GaN substrates toward nonpolar ultraviolet LEDs von Hazu, Kouji, Chichibu, Shigefusa F.

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Optical polarization properties of m-plane AlxGa1-xN epitaxial films grown on m-plane freestanding GaN substrates toward nonpolar ultraviolet LEDs von Hazu, Kouji, Chichibu, Shigefusa F

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Spatial light modulator with an over-two-octave bandwidth from ultraviolet to near infrared von HAZU, Kouji, SEKIKAWA, Taro, YAMASHITA, Mikio

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Acidic ammonothermal growth of GaN crystals using GaN powder as a nutrient von Bao, Quanxi, Hashimoto, Takanori, Sato, Fukuma, Hazu, Kouji, Saito, Makoto, Kagamitani, Yuji, Ishinabe, Takayuki, Kayano, Rinzo, Tomida, Daisuke, Qiao, Kun, Chichibu, Shigefusa F., Ishiguro, Tohru, Yokoyama, Chiaki

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Ammonothermal Crystal Growth of GaN Using an NH 4 F Mineralizer von Bao, Quanxi, Saito, Makoto, Hazu, Kouji, Furusawa, Kentaro, Kagamitani, Yuji, Kayano, Rinzo, Tomida, Daisuke, Qiao, Kun, Ishiguro, Tohru, Yokoyama, Chiaki, Chichibu, Shigefusa F.

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Spontaneous polarization and band gap bowing in Y x Al y Ga 1- x - y N alloys lattice-matched to GaN von Shimada, Kazuhiro, Zenpuku, Atsuhito, Fujiwara, Kazuya, Hazu, Kouji, Chichibu, Shigefusa F., Hata, Masahiro, Sazawa, Hiroyuki, Takada, Tomoyuki, Sota, Takayuki

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Spontaneous polarization and band gap bowing in Y x Al y Ga1- x - y N alloys lattice-matched to GaN von Shimada, Kazuhiro, Zenpuku, Atsuhito, Fujiwara, Kazuya, Hazu, Kouji, Chichibu, Shigefusa F., Hata, Masahiro, Sazawa, Hiroyuki, Takada, Tomoyuki, Sota, Takayuki

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Crystal Phase-Selective Epitaxy of Rutile and Anatase Nb-Doped TiO 2 Films on a GaN Template by the Helicon-Wave-Excited-Plasma Sputtering Epitaxy Method von Hazu, Kouji, Fouda, Aly, Nakayama, Tokuyuki, Tanaka, Akikazu, Chichibu, Shigefusa F.

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Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH4I von Bao, Quanxi, Sawayama, Hiromi, Hashimoto, Takanori, Sato, Fukuma, Hazu, Kouji, Kagamitani, Yuji, Ishinabe, Takayuki, Saito, Makoto, Kayano, Rinzo, Tomida, Daisuke, Qiao, Kun, Chichibu, Shigefusa F, Yokoyama, Chiaki, Ishiguro, Tohru

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Time-Resolved Photoluminescence of a Two-Dimensional Electron Gas in an Al 0.2 Ga 0.8 N/GaN Heterostructure Fabricated on Ammonothermal GaN Substrates von Chichibu, Shigefusa F., Hazu, Kouji, Kagamitani, Yuji, Onuma, Takeyoshi, Ehrentraut, Dirk, Fukuda, Tsuguo, Ishiguro, Tohru

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In-plane optical polarization and dynamic properties of the near-band-edge emission of an m-plane freestanding AlN substrate grown by PVT and a homoepitaxial film von Chichibu, Shigefusa, Kojima, Kazunobu, Hazu, Kouji, Ishikawa, Youichi, Furusawa, Kentaro, Mita, Seiji, Collazo, Ramon, Sitar, Zlatko, Uedono, Akira

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