Transport properties of epitaxial lift-off films von Mena, R. A., Schacham, S. E., Young, P. G., Haugland, E. J., Alterovitz, S. A.

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Compensation in epitaxial cubic SiC films von Segall, B., Alterovitz, S. A., Haugland, E. J., Matus, L. G.

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Enhancement of Shubnikov-de Haas Oscillations by Carrier Modulation von Schacham, S. E., Haugland, E. J., Alterovitz, S. A.

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Room-Temperature Determination of Two-Dimensional Electron Gas Concentration and Mobility in Heterostructures von Schacham, S. E., Mena, R. A., Haugland, E. J., Alterovitz, S. A.

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Cryogenic disturbance and pedogenic lag effects as determined by the profile developmental index: The styggedalsbreen glacier chronosequence, Norway von Haugland, Jake E., Owen Haugland, Bronwyn S.

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Vegetation establishment, succession and microsite frost disturbance on glacier forelands within patterned ground chronosequences von Haugland, Jake E., Beatty, Susan W.

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Short-term Periglacial Processes, Vegetation Succession, and Soil Development within Sorted Patterned Ground: Jotunheimen, Norway von Haugland, Jake E.

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Electronic properties of carbon fibers intercalated with copper chloride von Oshima, H., Natarajan, V., Woollam, J. A., Yavrouian, A., Haugland, E. J., Tsuzuku, T.

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Short-term Periglacial Processes, Vegetation Succession, and Soil Development within Sorted Patterned Ground: Jotunheimen, Norway von Haugland, JE

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Mixed Carrier Conduction in Modulation-doped Field Effect Transistors von Schacham, S. E., Haugland, E. J., Mena, R. A., Alterovitz, S. A.

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Characterization of the transport properties of channel delta-doped structures by light-modulated Shubnikov–de Haas measurements von Mena, R. A., Schacham, S. E., Haugland, E. J., Alterovitz, S. A., Young, P. G., Bibyk, S. B., Ringel, S. A.

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Subband quantum scattering times for AlGaAs/GaAs obtained using digital filtering von Mena, R. A., Schacham, S. E., Haugland, E. J., Alterovitz, S. A., Bibyk, S. B., Ringel, S. A.

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Intermodulation in the oscillatory magnetoresistance of a two-dimensional electron gas von Schacham, S. E., Haugland, E. J., Alterovitz, S. A.

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Comment on 'Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition' von Segall, B., Alterovitz, S. A., Haugland, E. J., Matus, L. G.

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Two Carrier Analysis of Persistent Photoconductivity in Modulation-Doped Structures von Schacham, S. E., Mena, R. A., Haugland, E. J., Alterovitz, S. A.

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Electronic properties of metal chloride intercalants of graphite von Woollam, J.A., Haugland, E.J., Dowell, M.B., Yavrouian, A., Lozier, A.G., Matulka, G.

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Shubnikov-de Haas measurements of the 2-D electron gas in pseudomorphic In(0.1)Ga(0.9)As grown on GaAs von Szydlic, P. P., Alterovitz, S. A., Haugland, E. J., Segall, B., Henderson, T. S.

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Superconducting Critical Field of Nb3Ge1 -- xSnx Pseudobinaries von Alterovitz, S A, Haugland, E J, Woollam, J A, Engelhardt, J J, Webb, G W

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High efficiency IMPATT diodes for 60 GHz intersatellite link applications von Haugland, E. J.

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Temperature dependence of electrical properties of non-doped and nitrogen-doped beta-SiC single crystals grown by chemical vapor deposition. Comment and reply von SEGALL, B, ALTEROVITZ, S. A, HAUGLAND, E. J, MATUS, L. G, SUZUKI, A, UEMOTO, A, SHIGETA, M, FURUKAWA, K, NAKAJIMA, S

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