Insertional Inactivation of Branched-Chain α-Keto Acid Dehydrogenase in Staphylococcus aureus Leads to Decreased Branched-Chain Membrane Fatty Acid Content and Increased Susceptibi... von Singh, Vineet K, Hattangady, Dipti S, Giotis, Efstathios S, Singh, Atul K, Chamberlain, Neal R, Stuart, Melissa K, Wilkinson, Brian J

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Genomic, Transcriptomic and Metabolomic Studies of Two Well-Characterized, Laboratory-Derived Vancomycin-Intermediate Staphylococcus aureus Strains Derived from the Same Parent Str... von Hattangady, Dipti S, Singh, Atul K, Muthaiyan, Arun, Jayaswal, Radheshyam K, Gustafson, John E, Ulanov, Alexander V, Li, Zhong, Wilkinson, Brian J, Pfeltz, Richard F

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Controlled nitrogen incorporation at the gate oxide surface von Hattangady, S. V., Niimi, H., Lucovsky, G.

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On the feasibility of growing dilute CxSi1-X epitaxial alloys von POSTHILL, J. B, RUDDER, R. A, HATTANGADY, S. V, FOUNTAIN, G. G, MARKUNAS, R. J

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Low interface state density SiO2 deposited at 300°C by remote plasma-enhanced chemical vapor deposition on reconstructed Si surfaces von FOUNTAIN, G. G, RUDDER, R. A, HATTANGADY, S. V, MARKUNAS, R. J, LINDORME, P. S

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The role of an ultrathin silicon interlayer at the SiO2-Ge interface von HATTANGADY, S. V, MANTINI, M. J, FOUTAIN, G. G, RUDDER, R. A, MARKUNAS, R. J

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Deposition of ultra-thin oxide dielectrics for MOSFETs by a combination of low-temperature plasma-assisted oxidation, and intermediate and high-temperature rapid thermal processing von Lucovsky, G., Misra, V., Hattangady, S.V., Yasuda, T., Wortman, J.J.

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Effect of rf power on remote-plasma deposited SiO2 films von HATTANGADY, S. V, ALLEY, R. G, FOUNTAIN, G. G, MARKUNAS, R. J, LUCOVSKY, G, TEMPLE, D

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Mechanical stress in SiO2 films obtained by remote plasma-enhanced chemical vapor deposition von TEMPLE, D, REISMAN, A, FOUNTAIN, G. G, WALTERS, M, HATTANGADY, S. V

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Epitaxial silicon deposition at 300°C with remote plasma processing using SiH4/H2 mixtures von HATTANGADY, S. V, POSTHILL, J. B, FOUNTAIN, G. G, RUDDER, R. A, MANTINI, M. J, MARKUNAS, R. J

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Low-temperature annealing of As-implanted Ge von HATTANGADY, S. V, FOUNTAIN, G. G, NICOLLIAN, E. H, MARKUNAS, R. J

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In situ cleaning of GaAs surfaces using hydrogen dissociated with a remote noble-gas discharge von HATTANGADY, S. V, RUDDER, R. A, MANTINI, M. J, FOUNTAIN, G. G, POSTHILL, J. B, MARKUNAS, R. J

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Gating of germanium surfaces using pseudomorphic silicon interlayers von VITKAVAGE, D. J, FOUNTAIN, G. G, RUDDER, R. A, HATTANGADY, S. V, MARKUNAS, R. J

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An ellipsometric measurement of optical properties for InP surfaces von LIU, X, IRENE, E. A, HATTANGADY, S, FOUNTAIN, G

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Interface engineering with pseudormorphic interlayers : Ge metal-insulator-semiconductor structures von HATTANGADY, S. V, FOUNTAIN, G. G, RUDDER, R. A, MANTINI, M. J, VITKAVAGE, D. J, MARKUNAS, R. J

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Low-temperature plasma-assisted oxidation of Si : a new approach for creation of device-quality Si-SiO2 interfaces with deposited dielectrics for applications in Si MOSFET technolo... von LUCOVSKY, G, YASUDA, T, MA, Y, HATTANGADY, S, MISRA, V, XU, X.-L, HORNUNG, B, WORTMAN, J. J

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Depth profile analysis of ultrathin silicon oxynitride films by ToF-SIMS von DOUGLAS, M. A, HATTANGADY, S, EASON, K

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Chemical etching of Ge for differential hall measurements von HATTANGADY, S. V, NICOLLIAN, E. H, MARKUNAS, R. J

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Integrated processing of stacked-gate heterostructures: plasma-assisted low temperature processing combined with rapid thermal high-temperature processing von Misra, V., Hattangady, S., Xu, X-L, Watkins, M.J., Hornung, B., Lucovsky, G., Wortman, J.J., Emmerichs, U., Meyer, C., Leo, K., Kurz, H.

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An alternative Mg precursor for p-type doping of OMVPE grown material von Timmons, M.L., Chiang, P.K., Hattangady, S.V.

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