Determination of bandgap narrowing and parasitic energy barriers in SiGe HBT's integrated in a bipolar technology von Le Tron, B., Hashim, M.D.R., Ashburn, P., Mouis, M., Chantre, A., Vincent, G.

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Electrical determination of bandgap narrowing in bipolar transistors with epitaxial Si, epitaxial Si/sub 1-x/Ge/sub x/, and ion implanted bases von Ashburn, P., Boussetta, H., Hashim, M.D.R., Chantre, A., Mouis, M., Parker, G.J., Vincent, G.

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Two dimensional simulation of transient enhanced boron out-diffusion from the base of a SiGe HBT due to an extrinsic base implant von Hashim, M.D.R., Lever, R.F., Ashburn, P.

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