Prediction of band inversion in Janus In 2 XYZ (X, Y, and Z = S, Se, Te) monolayers von Rajabi-Maram, Ashkan, Babaee Touski, Shoeib, Hasani, Nona, Shalchian, Majid

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Prediction of band inversion in Janus InXYZ (X, Y, and Z = S, Se, Te) monolayers von Rajabi-Maram, Ashkan, Babaee Touski, Shoeib, Hasani, Nona, Shalchian, Majid

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Effects of spin-orbit coupling on the electronic properties of the buckled III–V monolayers von Hasani, Nona, Rajabi-Maram, Ashkan, Touski, Shoeib Babaee

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Strain engineering of electronic and spin properties in SnX (X = P, As, Sb, Bi) monolayers von Hasani, Nona, Rajabi-Maram, Ashkan, Touski, Shoeib Babaee

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Electrical Properties of Double-Gate Field-Effect Transistor Based on MA 2 N 4 (M = Ti, Zr, and Hf; A = Si, Ge, and Sn) Monolayers von Hasani, Nona, Shalchian, Majid, Rajabi-Maram, Ashkan, Touski, Shoeib Babaee

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Electrical Properties of Double-Gate Field-Effect Transistor Based on MA } N } (M = Ti, Zr, and Hf; A = Si, Ge, and Sn) Monolayers von Hasani, Nona, Shalchian, Majid, Rajabi-Maram, Ashkan, Touski, Shoeib Babaee

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Structural and electronic properties of hexagonal MXH (M = C, Si, Ge and Sn; X = N, P, As and Sb) monolayers: A first-principles prediction von Rajabi-Maram, Ashkan, Hasani, Nona, Touski, Shoeib Babaee

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Tuning electronic properties of MSb (M = C, Si, Ge and Sn) monolayers by strain engineering von Rajabi-Maram, Ashkan, Hasani, Nona, Touski, Shoeib Babaee

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The structural, mechanical, electronic, and optical properties of monolayer and bilayer ABC3(AGa, In; BSi, Ge; CS, Se, Te) von Rajabi-Maram, Ashkan, Hasani, Nona, Shalchian, Majid, Touski, Shoeib Babaee

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Electrical Properties of Double-Gate Field-Effect Transistor Based on MA2N4 (M = Ti, Zr, and Hf; A = Si, Ge, and Sn) Monolayers von Hasani, Nona, Shalchian, Majid, Rajabi-Maram, Ashkan, Shoeib Babaee Touski

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Prediction of band inversion in Janus In2XYZ (X, Y, and Z = S, Se, Te) monolayers von Rajabi-Maram, Ashkan, Shoeib Babaee Touski, Hasani, Nona, Shalchian, Majid

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