A new high-density plasma etching system using a dipole-ring magnet von SEKINE, M, NARITA, M, HORIOKA, K, YOSHIDA, Y, OKANO, H

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Formation of single-crystal Al interconnection by in situ annealing von WADA, J.-I, SUGURO, K, HAYASAKA, N, OKANO, H

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Mechanism of corrosion in Al-Si-Cu von HAYASAKA, N, KOGA, Y, SHIMOMURA, K, YOSHIDA, Y, OKANO, H

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Self-aligned passivation on copper interconnection durability against oxidizing ambient annealing von ITOW, H, NAKASAKI, Y, MINAMIHABA, G, SUGURO, K, OKANO, H

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Gate oxide breakdown phenomena in magnetron plasma von SEKINE, M, HORIOKA, K, YOSHIDA, Y, OKANO, H

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Thin film deposition by low energy SiCl+n beam von SAKAI, T, SAKAI, A, OKANO, H

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Mechanism for initial stage of selective tungsten growth employing a WF6 and SiH4 mixture von ITOH, H, KAJI, N, WATANABE, T, OKANO, H

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SIO2 TAPERED ETCHING EMPLOYING MAGNETRON DISCHARGE OF FLUOROCARBON GAS von OHIWA, T, HORIOKA, K, ARIKADO, T, HASEGAWA, OKANO, H

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INFLUENCE OF AL SURFACE MODIFICATION ON SELECTIVITY IN VIA-HOLE ETCHING EMPLOYING CHF3 PLASMA von OHIWA, T, ARIKADO, T, HORIOKA, K, HASEGAWA, MATSUSHITA, T, SHIMOMURA, K, OKANO, H

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Resist and sidewall film removal after Al reactive ion etching (RIE) employing F+H2O downstream ashing von JIMBO, S, SHIMOMURA, K, OHIWA, T, SEKINE, M, MORI, H, HORIOKA, K, OKANO, H

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Mechanism for Initial Stage of Selective Tungsten Growth Employing a WF 6 and SiH 4 Mixture von Itoh, Hitoshi, Kaji, Naruhiko, Watanabe, Toru, Haruo Okano, Haruo Okano

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Highly selective etching of polycrystalline silicon on silicon dioxide at low wafer temperature, employing magnetron plasma von SEKINE, M, HORIOKA, K, ARIKADO, T, OKANO, H

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Highly selective SiO2 etch employing inductively coupled hydro-fluorocarbon plasma chemistry for self aligned contact etch von IIJIMA, Y, ISHIKAWA, Y, YANG, C.-I, CHANG, M, OKANO, H

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Photo-excited etching of poly-crystalline and single-crystalline silicon in Cl2 atmosphere von OKANO, H, HORIIKE, Y, SEKINE, M

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Single silicon etching profile simulation von ARIKADO, T, HORIOKA, K, SEKINE, M, OKANO, H, HORIIKE, Y

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SiO 2 Tapered Etching Employing Magnetron Discharge of Fluorocarbon Gas von Ohiwa, Tokuhisa, Horioka, Keiji, Arikado, Tsunetoshi, Hasegawa, Isahiro, Haruo Okano, Haruo Okano

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Resist and Sidewall Film Removal after Al Reactive Ion Etching (RIE) Employing F+H 2 O Downstream Ashing von Jimbo, Sadayuki, Shimomura, Kouji, Ohiwa, Tokuhisa, Sekine, Makoto, Mori, Haruki, Keiji Horioka, Keiji Horioka, Haruo Okano, Haruo Okano

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Influence of Al Surface Modification on Selectivity in Via-Hole Etching Employing CHF 3 Plasma von Ohiwa, Tokuhisa, Arikado, Tsunetoshi, Horioka, Keiji, Hasegawa, Isahiro, Matsushita, Takaya, Kouji Shimomura, Kouji Shimomura, Haruo Okano, Haruo Okano

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In situ transmission electron microscopy observation of single crystallization of filled aluminum interconnection von WADA, J.-I, TOYODA, H, KANEKO, H, HAYASAKA, N, YASUDA, H, MORI, H, OKANO, H

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Excimer laser photochemical directional etching of phosphorous doped poly-crystalline silicon von SEKINE, M, OKANO, H, HORIIKE, Y

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