Growth of 3C–SiC on 150-mm Si(100) substrates by alternating supply epitaxy at 1000 °C von Wang, Li, Dimitrijev, Sima, Han, Jisheng, Iacopi, Alan, Hold, Leonie, Tanner, Philip, Harrison, H. Barry

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Anisotropic etching of {100} and {110} planes in (100) silicon von Powell, Oliver, Harrison, H Barry

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The use of titanium and titanium dioxide as masks for deep silicon etching von Powell, Olly, Sweatman, Denis, Barry Harrison, H

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Electrical and physical characterization of gate oxides on 4H-SiC grown in diluted N2O von Cheong, Kuan Yew, Dimitrijev, Sima, Han, Jisheng, Harrison, H. Barry

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Investigation of nitric oxide and Ar annealed SiO2/SiC interfaces by x-ray photoelectron spectroscopy von Li, Hui-feng, Dimitrijev, Sima, Sweatman, Denis, Harrison, H. Barry, Tanner, Philip, Feil, Bill

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Nitridation of silicon-dioxide films grown on 6H silicon carbide von Dimitrijev, S., Hui-Feng Li, Harrison, H.B., Sweatman, D.

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Slow state characterization by measurements of current-voltage characteristics of MOS capacitors von Dimitrijev, Sima, Tanner, Philip, Yao, Z.-Qiang, Barry Harrison, H.

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Modeling the growth of thin silicon oxide films on silicon von Dimitrijev, Sima, Harrison, H. Barry

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In vitro elution characteristics of commercially and noncommercially prepared antibiotic PMMA beads von NELSON, C. L, GRIFFIN, F. M, HARRISON, B. H, COOPER, R. E

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The histology of distraction osteogenesis using different external fixators von Aronson, J, Harrison, B H, Stewart, C L, Harp, Jr, J H

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Analysis of Fowler–Nordheim injection in NO nitrided gate oxide grown on n-type 4H–SiC von Li, Hui-Feng, Dimitrijev, Sima, Sweatman, Denis, Harrison, H.Barry

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Interfacial characteristics of N2O and NO nitrided SiO2 grown on SiC by rapid thermal processing von Li, Hui-feng, Dimitrijev, Sima, Harrison, H. Barry, Sweatman, Denis

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Device parameter changes caused by manufacturing fluctuations of deep submicron MOSFET's von Sitte, R., Dimitrijev, S., Harrison, H.B.

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Model for dielectric growth on silicon in a nitrous oxide environment von DIMITRIJEV, S, SWEATMAN, D, HARRISON, H. B

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Application of harmonic balance-finite element method (HBFEM) in the design of switching power supplies von Jun Wei Lu, Yamada, S., Harrison, H.B.

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Improved Operation of Micromechanical Comb-Drive Actuators through the Use of a New Angled Comb Finger Design von Rosa, Michel A., Dimitrijev, Sima, Harrison, H. Barry

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Measurement of plasma etch damage by a new slow trap profiling technique von Tanner, P., Dimitrijev, S., Yew-Tong Yeow, Harrison, H.B.

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Using TLM principles to determine MOSFET contact and parasitic resistance von Reeves, Geoffrey K, Harrison, H.Barry

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Slow current transients in metal–oxide–semiconductor capacitors von Yao, Ze-Qiang, Dimitrijev, Sima, Tanner, Philip, Harrison, H. Barry

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Improved reliability of NO-nitrided SiO 2 grown on p-type 4H-SiC von Hui-Feng Li, Dimitrijev, S., Harrison, H.B.

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