Monolithically integrated MSM-transimpedance amplifier grown by MBE for 1.0-1.6 mu m operation von Fuji, H.S., Ray, S., Williams, T.J., Griem, H.T., Harrang, J.P., Daniels, R.R., LaGasse, M.J., West, D.L.

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Burst-mode bit-error-rate characterization of dual-rate MIL-STD-1773 transceiver von Kim, J.H., Bonebright, R.K., Harrang, J.P., Bocek, T., Chan, E.Y., Chi-Shain Hong

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A universal large/small signal 3-terminal FET model using a nonquasistatic charge-based approach von Daniels, R.R., Yang, A.T., Harrang, J.P.

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High-performance In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HFET compatible with optical-detector integration von Harrang, J.P., Daniels, R.R., Fuji, H.S., Griem, H.T., Ray, S.

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Use of capacitance techniques in the study of two-dimensional layers in silicon mosfets von Goodall, R.K., Higgins, R.J., Harrang, J.P.

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Airborne information and reconnaissance network von Ayyagari, A., Harrang, J.P., Ray, S.

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Use of capacitance techniques in the study of two-dimensional layers in silicon MOSFETs von Goodall, R.K., Higgins, R.J., Harrang, J.P.

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Modeling and simulation of higb-frequency integrated circuits based on scattering parameters von Yang, A.T., Chan, C.H., Yao, J.T., Daniels, R.R., Harrang, J.P.

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