High performance fully-depleted tri-gate CMOS transistors von Doyle, B.S., Datta, S., Doczy, M., Hareland, S., Jin, B., Kavalieros, J., Linton, T., Murthy, A., Rios, R., Chau, R.

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Experimental determination of threshold voltage shifts due to quantum mechanical effects in MOS electron and hole inversion layers von Chindalore, G., Hareland, S.A., Jallepalli, S.A., Tasch, A.F., Maziar, C.M., Chia, V.K.F., Smith, S.

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A pseudo-lucky electron model for simulation of electron gate current in submicron NMOSFET's von Hasnat, K., Yeap, C.-F., Jallepalli, S., Shih, W.-K., Hareland, S.A., Agostinelli, V.M., Tasch, A.F., Maziar, C.M.

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An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si von Chindalore, G., Shih, W.-K., Jallepalli, S., Hareland, S.A., Tasch, A.F., Maziar, C.M.

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Household Transmission and Symptomology of Severe Acute Respiratory Syndrome Coronavirus 2 Alpha Variant among Children—California and Colorado, 2021 von Waltenburg, Michelle A., Whaley, Melissa J., Chancey, Rebecca J., Donnelly, Marisa A.P., Chuey, Meagan R., Soto, Raymond, Schwartz, Noah G., Chu, Victoria T., Sleweon, Sadia, McCormick, David W., Uehara, Anna, Retchless, Adam C., Tong, Suxiang, Folster, Jennifer M., Petway, Marla, Thornburg, Natalie J., Drobeniuc, Jan, Austin, Brett, Hudziec, Meghan M., Stringer, Ginger, Albanese, Bernadette A., Totten, Sarah E., Matzinger, Shannon R., Staples, J. Erin, Killerby, Marie E., Hughes, Laura J., Matanock, Almea, Beatty, Mark, Tate, Jacqueline E., Kirking, Hannah L., Hsu, Christopher H., Alford, Alexis, Baird, Samuel, Bankers, Laura, Bello, Jazmin, Bolcen, Shanna, Browning, Peter, Cook, Peter W., David, Ebenezer, Harcourt, Jennifer L., Hareland, Geir, Hetherington-Rauth, Molly C., Ir, Diana, Jain, Shilpi, Jia, Tao Lily, Johnson, Ralen, Kelleher, Anna, Kim, Gimin, Li, Yan, Lynch, Brian, Mallal, Daniel, Maniatis, Panagiotis, Marine, Rachel, Medrzycki, Magdalena, Metz, John M., Montmayeur, Anna Maria, Moss, Kimberly M., Justin Ng, Han Jia, Nyugen, Van, Ortiz, Kristina, Paden, Clinton R., Park, So Hee, Queen, Krista, Rossheim, Alexandria E.B., Semenova, Vera, Shepard, Samuel S., Tamin, Azaibi, Tao, Ying, Tejada-Strop, Alexandra, Wong, Phili, Zellner, Briana, Zhang, Jing

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A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFETs von Hareland, S.A., Krishnamurthy, S., Jallepalli, S., Choh-Fei Yeap, Hasnat, K., Tasch, A.F., Maziar, C.M.

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An improved technique and experimental results for the extraction of electron and hole mobilities in MOS accumulation layers von Chindalore, G.L., McKeon, J.B., Mudanai, S., Hareland, S.A., Shih, W.-K., Wang, C., Tasch, A.F., Maziar, C.M.

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Computationally efficient models for quantization effects in MOS electron and hole accumulation layers von Hareland, S.A., Manassian, M., Shih, W.-K., Jallepalli, S., Wang, H., Chindalore, G.L., Tasch, Al.F., Maziar, C.M.

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Experimental determination of electron and hole mobilities in MOS accumulation layers von McKeon, J.B., Chindalore, G., Hareland, S.A., Shih, W.-K., Wang, C., Tasch, A.F., Maziar, C.M.

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Thermionic emission model of electron gate current in submicron NMOSFETs von Hasnat, K., Choh-Fei Yeap, Jallepalli, S., Hareland, S.A., Shih, W.-K., Agostinelli, V.M., Tasch, A.F., Maziar, C.M.

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A physically-based model for quantization effects in hole inversion layers von Hareland, S.A., Jallepalli, S., Wei-Kai Shih, Haihong Wang, Chindalore, G.L., Tasch, A.F., Maziar, C.M.

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Silicon nano-transistors for logic applications von Chau, Robert, Boyanov, Boyan, Doyle, Brian, Doczy, Mark, Datta, Suman, Hareland, Scott, Jin, Ben, Kavalieros, Jack, Metz, Matthew

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Impact of CMOS process scaling and SOI on the soft error rates of logic processes von Hareland, S., Maiz, J., Alavi, M., Mistry, K., Walsta, S., Changhong Dai

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Silicon nano-transistors and breaking the 10 nm physical gate length barrier von Chau, R., Doyle, B., Doczy, M., Datta, S., Hareland, S., Jin, B., Kavalieros, J., Metz, M.

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Reliability considerations for implantable medical ICs von Porter, M., Gerrish, P., Tyler, L., Murray, S., Mauriello, R., Soto, F., Phetteplace, G., Hareland, S.

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