PIN-PJBT Integration: A New GaAs Based Optoelectronic Receiver von Dillmann, F., Kwaspen, J.M.M., Marso, M., Hardtdegen, M., Kaufmann, L.M.F., Kordos, P., Luth, H., Brennemann, A., Tegude, F.J.

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Nano-LED array fabrication suitable for future single photon lithography von Mikulics, M, Hardtdegen, H

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Magnetically and optically tunable terahertz radiation from Ta/NiFe/Pt spintronic nanolayers generated by femtosecond laser pulses von Adam, Roman, Chen, Genyu, Bürgler, Daniel E., Shou, Tianyu, Komissarov, Ivan, Heidtfeld, Sarah, Hardtdegen, Hilde, Mikulics, Martin, Schneider, Claus M., Sobolewski, Roman

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Direct electro-optical pumping for hybrid CdSe nanocrystal/III-nitride based nano-light-emitting diodes von Mikulics, M., Arango, Y. C., Winden, A., Adam, R., Hardtdegen, A., Grützmacher, D., Plinski, E., Gregušová, D., Novák, J., Kordoš, P., Moonshiram, A., Marso, M., Sofer, Z., Lüth, H., Hardtdegen, H.

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The Role of Si during the Growth of GaN Micro- and Nanorods von Tessarek, C, Heilmann, M, Butzen, E, Haab, A, Hardtdegen, H, Dieker, C, Spiecker, E, Christiansen, S

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Exploiting the switching dynamics of HfO2-based ReRAM devices for reliable analog memristive behavior von Cüppers, F., Menzel, S., Bengel, C., Hardtdegen, A., von Witzleben, M., Böttger, U., Waser, R., Hoffmann-Eifert, S.

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Experimental determination of Rashba and Dresselhaus parameters and g-factor anisotropy via Shubnikov-de Haas oscillations von Herzog, F, Hardtdegen, H, Schäpers, Th, Grundler, D, Wilde, M A

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Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer von Mikulics, M, Kordoš, P, Gregušová, D, Gaži, Š, Novák, J, Sofer, Z, Mayer, J, Hardtdegen, H

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Determination of Thermal Damage Threshold in THz Photomixers Using Raman Spectroscopy von Mikulics, Martin, Adam, Roman, Chen, Genyu, Chakraborty, Debamitra, Cheng, Jing, Pericolo, Anthony, Komissarov, Ivan, Bürgler, Daniel E., Heidtfeld, Sarah F., Serafini, John, Preble, Stefan, Sobolewski, Roman, Schneider, Claus M., Mayer, Joachim, Hardtdegen, Hilde H.

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Generation of terahertz transients from Co2Fe0.4Mn0.6Si Heusler alloy/heavy-metal bilayers von Heidtfeld, S., Adam, R., Kubota, T., Takanashi, K., Cao, D., Schmitz-Antoniak, C., Bürgler, D.E., Wang, F., Greb, C., Chen, G., Komissarov, I., Hardtdegen, H., Mikulics, M., Sobolewski, R., Suga, S., Schneider, C.M.

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Spin-orbit coupling and phase coherence in InAs nanowires von Estévez Hernández, S., Akabori, M., Sladek, K., Volk, Ch, Alagha, S., Hardtdegen, H., Pala, M. G., Demarina, N., Grützmacher, D., Schäpers, Th

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Inhomogeneity of donor doping in SrTiO3 substrates studied by fluorescence-lifetime imaging microscopy von Rodenbücher, C., Gensch, T., Speier, W., Breuer, U., Pilch, M., Hardtdegen, H., Mikulics, M., Zych, E., Waser, R., Szot, K.

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Compact extreme ultraviolet source for laboratory-based photoemission spectromicroscopy von Schmitz, Christoph, Wilson, Daniel, Rudolf, Denis, Wiemann, Carsten, Plucinski, Lukasz, Riess, Sally, Schuck, Martin, Hardtdegen, Hilde, Schneider, Claus M., Tautz, F. Stefan, Juschkin, Larissa

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Effect of Si-doping on InAs nanowire transport and morphology von Wirths, S., Weis, K., Winden, A., Sladek, K., Volk, C., Alagha, S., Weirich, T. E., von der Ahe, M., Hardtdegen, H., Lüth, H., Demarina, N., Grützmacher, D., Schäpers, Th

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Terahertz inverse spin Hall effect in spintronic nanostructures with various ferromagnetic materials von Cheng, Jing, Komissarov, Ivan, Chen, Genyu, Chakraborty, Debamitra, Adam, Roman, Bürgler, Daniel E., Heidtfeld, Sarah, Cao, Derang, Büscher, Markus, Hardtdegen, Hilde, Mikulics, Martin, Schneider, Claus M., Gładczuk, Leszek, Przysłupski, Piotr, Sobolewski, Roman

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MOVPE of n-doped GaAs and modulation doped GaAs/AlGaAs nanowires von Sladek, K., Klinger, V., Wensorra, J., Akabori, M., Hardtdegen, H., Grützmacher, D.

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Conditioning nano-LEDs in arrays by laser-micro-annealing: The key to their performance improvement von Mikulics, M., Kordoš, P., Gregušová, D., Sofer, Z., Winden, A., Trellenkamp, St, Moers, J., Mayer, J., Hardtdegen, H.

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A model structure for interfacial phase change memories: Epitaxial trigonal Ge1Sb2Te4 von Hardtdegen, H., Rieß, S., Schuck, M., Keller, K., Jost, P., Du, H., Bornhöfft, M., Schwedt, A., Mussler, G., v.d. Ahe, M., Mayer, J., Roth, G., Grützmacher, D., Mikulics, M.

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Nanoimprint and selective-area MOVPE for growth of GaAs/InAs core/shell nanowires von Haas, F, Sladek, K, Winden, A, von der Ahe, M, Weirich, T E, Rieger, T, Lüth, H, Grützmacher, D, Schäpers, Th, Hardtdegen, H

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THz generation by exchange-coupled spintronic emitters von Adam, Roman, Cao, Derang, Bürgler, Daniel E., Heidtfeld, Sarah, Wang, Fangzhou, Greb, Christian, Cheng, Jing, Chakraborty, Debamitra, Komissarov, Ivan, Büscher, Markus, Mikulics, Martin, Hardtdegen, Hilde, Sobolewski, Roman, Schneider, Claus M.

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