Surface quality of InP etched with tertiarybutylchloride in an MOVPE reactor von Franke, D., Sabelfeld, N., Ebert, W., Harde, P., Wolfram, P., Grote, N.

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Effect of metal organic vapor phase epitaxy growth conditions on emission wavelength stability of 1.55 μ m quantum dot lasers von Franke, D., Moehrle, M., Boettcher, J., Harde, P., Sigmund, A., Kuenzel, H.

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Heat Transfer Enhancement by Using Nanofluids in Heat Pipe - A Review von Shirke, P.K., Warkhedkar, R.M., Harde, Pravin R., Kusure, Balasao D.

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Comparison of MOVPE-based Zn diffusion into InGaAsP/InP using H2 and N2 carrier gas von SCHROETER-JANSSEN, H, ROEHLE, H, FRANKE, D, BOCHNIA, R, HARDE, P, GROTE, N

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MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits von Gibis, R, Kizuki, H, Albrecht, P, Harde, P, Urmann, G, Kaiser, R, Künzel, H

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Pt thin-film metallization for FC-bonding using SnPb60/40 solder bump metallurgy von Kuhmann, J.F, Chiang, C.-H, Harde, P, Reier, F, Oesterle, W, Urban, I, Klein, A

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Spatial distribution of Fe in selectively metalorganic MBE regrown device structures as determined by laterally resolved SIMS von Harde, P, Gibis, R, Kaiser, R, Kizuki, H, Künzel, H

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MBE growth of high-quality InP for [formula omitted] heterostructures using incongruent evaporation of GaP von Künzel, H., Böttcher, J., Harde, P., Maessen, R.

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MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP von KÜNZEL, H, BÖTTCHER, J, HARDE, P, MAESSEN, R

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Fe and Ti doping of InP grown by metalorganic chemical-vapor deposition for the fabrication of thermally stable high-resistivity layers von Wolf, T., Zinke, T., Krost, A., Scheffler, H., Ullrich, H., Bimberg, D., Harde, P.

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MOMBE grown GaInAsP ( λg=1.05/1.15 μm) waveguide for laser integrated photonic ICs von Künzel, H, Gibis, R, Kizuki, H, Albrecht, P, Ebert, S, Harde, P, Malchow, S, Kaiser, R

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Planarized selective regrowth of InP:Fe by LP-MOVPE using tertiarybutylchloride for high-speed modulator devices von Paraskevopoulos, A., Franke, D., Harde, P., Gouraud, S., Le Pallec, M., Lelarge, F., Decobert, J.

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On the role of interface properties in the degradation of metalorganic vapor phase epitaxially grown Fe profiles in InP von ROEHLE, H, SCHROETER-JANSSEN, H, HARDE, P, FRANKE, D

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Hydrogen passivation in InP:Zn resulting from reactive ion etching during laser stripe formation von Kreissl, J., Moehrle, M., Sigmund, A., Bochnia, R., Harde, P., Ulrici, W.

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Doping characteristics of undoped and Zn-doped in(Ga)AlAs layers grown by low-pressure metalorganic vapour phase epitaxy von Reier, F.W., Jahn, E., Agrawal, N., Harde, P., Grote, N.

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In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth von KÜNZEL, H, BOCHNIA, R, BÖTTCHER, J, HARDE, P, HASE, A, GRIEBENOW, U

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Growth of semi-insulating InP: Fe in the low pressure hydride VPE system von Beccard, R., Beuven, S., Heime, K., Schmald, R., Jürgensen, H., Harde, P., Schlak, M.

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Doping and diffusion behaviour of Fe in MOVPE grown InP layers von Franke, D., Harde, P., Wolfram, P., Grote, N.

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Secondary ion mass spectroscopic investigation of GaInAsP/InP laser structures made by metalorganic vapor phase epitaxy regrowth von HARDE, P, FIDORRA, F, VENGHAUS, H

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Epitaxy of high resistivity InP on Si von SCHNABEL, R. F, KROST, A, GRUNDMANN, M, HEINRICHSDORFF, F, BIMBERG, D, PILATZEK, M, HARDE, P

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