Effects of Parasitic Capacitance, External Resistance, and Local Stress on the RF Performance of the Transistors Fabricated by Standard 65-nm CMOS Technologies von KIM, Han-Su, KIM, Jedon, CHUNG, Chulho, LIM, Jinsung, JEONG, Joohyun, JIN HYOUN JOE, PARK, Jaehoon, PARK, Kang-Wook, OH, Hansu, JONG SHIK YOON

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Five-Step (Pad-Pad Short-Pad Open-Short-Open) De-Embedding Method and Its Verification von IN MAN KANG, JUNG, Seung-Jae, KIM, Han-Gu, CHOI, Kyu-Myung, CHOI, Tae-Hoon, JUNG, Jae-Hong, CHUNG, Chulho, KIM, Han-Su, OH, Hansu, HYUN WOO LEE, JO, Gwangdoo, KIM, Young-Kwang

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Effective Gate Layout Methods for RF Performance Enhancement in MOSFETs von Kim, Han-Su, Park, Kangwook, Oh, Hansu, Jung, Eun Seung

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Characterization and Modeling of RF-Performance (f) Fluctuation in MOSFETs von KIM, Han-Su, CHULHO CHUNG, JINSUNG LIM, PARK, Kangwook, OH, Hansu, KANG, Ho-Kyu

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RF Model of BEOL Vertical Natural Capacitor (VNCAP) Fabricated by 45-nm RF CMOS Technology and Its Verification von IN MAN KANG, JUNG, Seung-Jae, KIM, Young-Kwang, KIM, Han-Gu, CHOI, Kyu-Myung, CHOI, Tae-Hoon, JUNG, Jae-Hong, CHUNG, Chulho, KIM, Han-Su, PARK, Kangwook, OH, Hansu, LEE, Hyun-Woo, JO, Gwangdoo

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Process Development of Dislocation-Free SiGe P-Channel in FinFET Technology von Su, Bo, Deng, Wu-Feng, Yin, Chao, Zhang, En-Ning, Ke, Xing, Oh, Hansu, Zhao, Jie, Ye, Bin, Zhang, Hai-Yang

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Accurate Extraction of Excess Channel Thermal Noise Coefficient in Berkeley Short-Channel Insulated Gate Field-Effect Transistor Model 4 von Jeon, Jongwook, Lee, Jaehong, Park, Chan Hyeong, Lee, Hyunwoo, Oh, Hansu, Kang, Ho-Kyu, Park, Byung-Gook, Shin, Hyungcheol

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Effect of technology scaling on RF performance of the transistors fabricated by standard CMOS technology von Han-Su Kim, Chulho Chung, Joohyun Jeong, Seung-Jae Jung, Jinsung Lim, JinHyoun Joe, Jaehoon Park, HyunWoo Lee, Gwangdoo Jo, Kangwook Park, Jedon Kim, Hansu Oh, Jong Shik Yoon

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Importance of [Formula Omitted] and Substrate Resistance Control for RF Performance Improvement in MOSFETs von Kim, Han-Su, Park, Kangwook, Oh, Hansu, Jung, Eun Seung

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Importance of V and Substrate Resistance Control for RF Performance Improvement in MOSFETs von Han-Su Kim, Kangwook Park, Hansu Oh, Eun Seung Jung

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Importance of V rm th and Substrate Resistance Control for RF Performance Improvement in MOSFETs von Kim, Han-Su, Park, Kangwook, Oh, Hansu, Jung, Eun Seung

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Importance of Vth and Substrate Resistance Control for RF Performance Improvement in MOSFETs von KIM, Han-Su, PARK, Kangwook, OH, Hansu, EUN SEUNG JUNG

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Semiconductor structure and method for forming the same von Su, Bo, Li, Pengchong, Chen, Yiyu, Shi, Xuejie, Oh, Hansu

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Process Development of Dislocation-Free SiGe P-Channel in FinFET Technology von Su, Bo, Deng, Wu-Feng, Yin, Chao, Zhang, En-Ning, Ke, Xing, Oh, Hansu, Zhao, Jie, Ye, Bin, Zhang, Hai-Yang

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Semiconductor devices having a fin-shaped active region and methods of manufacturing the same von Kim, Munhyeon, Noh, Changwoo, Kim, Dongwon, Whang, Sungman, Oh, Hansu

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Semiconductor Devices and Methods of Manufacturing the Same von Kim, Munhyeon, Noh, Changwoo, Kim, Dongwon, Whang, Sungman, Oh, Hansu

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High performance NPN BJTs in standard CMOS process for GSM transceiver and DVB-H tuner von Jedon Kim, Hansu Oh, Chulho Chung, Joo-Hyun Jjeong, Hyunwoo Lee, Seok-Hee Hwang, In-Chul Hwang, Young-Jin Kim, Kyushik Hong, Eunseung Jung, Kwang-Pyuk Suh

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SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREOF von OH, Hansu, SU, Bo

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SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREFOR von OH, Hansu, SU, Bo

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SEMICONDUCTOR STRUCTURE AND FORMATION METHOD THEREOF von OH, Hansu, SU, Bo, YU, Hailong, ZHANG, Jing

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