Obesity in adolescent men increases the risk of venous thromboembolism in adult life von Glise Sandblad, K., Jern, S., Åberg, M., Robertson, J., Torén, K., Lindgren, M., Adiels, M., Hansson, P.O., Rosengren, A.

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The impact of time-updated resting heart rate on cause-specific mortality in a random middle-aged male population: a lifetime follow-up von Cui, X.T, Mandalenakis, Z, Thunstrom, E, Fu, M, Svardsudd, K, Hansson, P.O

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Early prediction of falls after stroke: One-year follow-up of the fall study of Gothenburg (FallsGOT) von Samuelsson, C.M., Hansson, P.O., Persson, C.U.

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[PP.06.08] SECULAR TRENDS IN CARDIOVASCULAR RISK FACTORS AMONG MIDDLE-AGED SWEDISH WOMEN OVER THE LAST 35 YEARS von Collén, A., Rosengren, A., Johansson, S., Hansson, P.O.

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P2615Prevalence and lifetime risk factors for aortic stenosis in a general population of middle aged men in Sweden with 21 years follow up von Basic, C., Thunstrom, E., Hansson, P.O., You, C., Rosengren, A., Ergatoudes, C., Morales, D., Mandalenakis, Z., Caidahl, K., Fu, M.

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High quality GexSi1-x by heteroepitaxial lateral overgrowth von HANSSON, P. O, GUSTAFSSON, A, ALBRECHT, M, BERGMANN, R, STRUNK, H. P, BAUSER, E

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Bulk properties of very large diameter silicon single crystals von von Ammon, W., Dornberger, E., Hansson, P.O.

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Dimensionality and critical sizes of GeSi on Si(100) von Hansson, P.O., Albrecht, M., Strunk, H.P., Bauser, E., Werner, J.H.

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Early growth stages of Ge0.85Si0.15 on Si(001) from Bi solution von DORSCH, W, CHRISTIANSEN, S, ALBRECHT, M, HANSSON, P. O, BAUSER, E, STRUNK, H. P

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Cathodoluminescence from relaxed Ge xSi 1− x grown by heteroepitaxial lateral overgrowth von Gustafsson, A., Hansson, P.O., Bauser, E.

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Heteroepitaxial lateral overgrowth of GexSi1-x over SiO2/Si structures by liquid phase epitaxy von HANSSON, P. O, BERGMANN, R, BAUSER, E

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Cathodoluminescence from relaxed GexSi1-x grown by heteroepitaxial lateral overgrowth von GUSTAFSSON, A, HANSSON, P. O, BAUSER, E

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Solution growth of epitaxial semiconductor-on-insulator layers von Silier, I., Gutjahr, A., Nagel, N., Hansson, P.O., Czech, E., Konuma, M., Bauser, E., Banhart, F., Köhler, R., Raidt, H., Jenichen, B.

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Centrifugal techniques for solution growth of semiconductor layers von Konuma, M., Silier, I., Gutjahr, A., Hansson, P.O., Cristiani, G., Czech, E., Bauser, E., Banhart, F.

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Locally varying chemical potential and growth surface profile: a case study on solution grown [formula omitted] von Albrecht, M., Christiansen, S., Michler, J., Strunk, H.P., Hansson, P.O., Bauser, E.

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Negative-differential conductivity measured on a germanium layer on Si(001) von Müssig, H.-J., Krüger, D., Hinrich, S., Hansson, P.O.

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Heteroepitaxial lateral overgrowth of Ge xSi 1− x over SiO 2/Si structures by liquid phase epitaxy von Hansson, P.O., Bergmann, R., Bauser, E.

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Early growth stages of Ge 0.85Si 0.15 on Si(001) from Bi solution von Dorsch, W., Christiansen, S., Albrecht, M., Hansson, P.O., Bauser, E., Strunk, H.P.

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Liquid phase epitaxy of GeSi on {111} Si substrates: lattice defect structure and electronic properties von Chen, J.X., Ernst, F., Hansson, P.O., Bauser, E.

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Misfit dislocation formation and interaction in Ge(Si) on Si (001) von Albrecht, M., Strunk, H.P., Hansson, P.O., Bauser, E.

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