Spatially direct and indirect transitions observed for Si/Ge quantum dots von Larsson, M., Elfving, A., Holtz, P. O., Hansson, G. V., Ni, W.-X.

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Bias-dependent scanning tunneling microscopy study of the oxygen-adsorbed Si(111)-(7×7) surface: Observation of metastable molecular oxygen von Sakamoto, Kazuyuki, Jemander, S. Thorbjörn, Hansson, Göran V., Uhrberg, Roger I. G.

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Photoluminescence study of Si/Ge quantum dots von Larsson, M., Elfving, A., Holtz, P.O., Hansson, G.V., Ni, W.-X.

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Photoluminescence studies of Sn quantum dots in Si grown by MBE von Karim, A., Hansson, G.V., Ni, W.-X., Holtz, P.O., Larsson, M., Atwater, H.A.

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Origin of abnormal temperature dependence of electroluminescence from Er/O-doped Si diodes von Hansson, G. V., Ni, W.-X., Du, C.-X., Elfving, A., Duteil, F.

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An STM study of the surface defects of the [formula omitted]-Sn/Si(1 1 1) surface von Jemander, S.T., Lin, N., Zhang, H.M., Uhrberg, R.I.G., Hansson, G.V.

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Photoelectron spectroscopy of surface states on semiconductor surfaces von Hansson, Göran V., Uhrberg, Roger I.G.

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Si/SiGe/Si:Er:O light-emitting transistors prepared by differential molecular-beam epitaxy von Du, Chun-Xia, Duteil, Fabrice, Hansson, Göran V., Ni, Wei-Xin

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Surface structure of Si(100) with submonolayer coverages of C von Jemander, S.T, Zhang, H.M, Uhrberg, R.I.G, Hansson, G.V

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Er/O and Er/F doping during molecular beam epitaxial growth of Si layers for efficient 1.54 μm light emission von Ni, W.-X., Joelsson, K. B., Du, C.-X., Buyanova, I. A., Pozina, G., Chen, W. M., Hansson, G. V., Monemar, B., Cardenas, J., Svensson, B. G.

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Luminescence study of Si/Ge quantum dots von Larsson, M., Elfving, A., Holtz, P.-O., Hansson, G.V., Ni, W.-X.

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Resonant scattering in delta-doped heterostructures von Robinson, I. K., Nilsson, P. O., Debowska-Nilsson, D., Ni, W. X., Hansson, G. V.

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Room temperature 1.54 μm light emission of erbium doped Si Schottky diodes prepared by molecular beam epitaxy von Du, Chun-Xia, Ni, Wei-Xin, Joelsson, Kenneth B., Hansson, Göran V.

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Growth of relaxed Si1-xGex layers using an oxygen doped Si(O) compliant layer von HAQ, E, NI, W.-X, HANSSON, G. V

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Asymmetric Band Alignment of Si/Ge Quantum Dots Studied by Luminescence of p-i-n and n-i-p Structures von Larsson, M, Holtz, P O, Elfving, A, Hansson, G V, Ni, W X

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Surface diffusion limited nucleation of Ge dots on the Si(001) surface von Wu, Y.-H, Wang, C.-Y, Elfving, A, Hansson, G.V, Ni, W.-X

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Light emitting SiGe/I-Si/si:Er:O tunneling diodes prepared by molecular beam epitaxy von NI, W.-X, DU, C.-X, DUTEIL, F, POZINA, G, HANSSON, G. V

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Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy von Du, Chun-Xia, Ni, Wei-Xin, Joelsson, Kenneth B, Duteil, Fabrice, Hansson, Göran V

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Characterization of highly boron-doped Si, Si1-xGex and Ge layers by high-resolution transmission electron microscopy von RADAMSON, H. H, JOELSSON, K. B, NI, W.-X, HULTMAN, L, HANSSON, G. V

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Er/O doped Si1-xGex alloy layers grown by MBE von DUTEIL, F, DU, C.-X, JÄRRENDAHL, K, NI, W.-X, HANSSON, G. V

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