Modelling and Application of Synchronization of Nucleation by Means of Intermittent Radiant Heating von Mats I. Larsson, Mats I. Larsson, Göran V. Hansson, Göran V. Hansson

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Growth, Characterization and Device Fabrication of Boron Delta-Doped Structures by Si-Molecular Beam Epitaxy von Sardela Jr, Mauro R., Radamson, Homayon H., Lars Hultman, Lars Hultman, Göran V. Hansson, Göran V. Hansson

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Thermal Stability Characterization of Doped Layers and Heterostructures Grown by Si-Molecular Beam Epitaxy von Sardela Jr, Mauro R., Radamson, Homayon H., Ni, Wei-Xin, Jan-Eric Sundgren, Jan-Eric Sundgren, Göran V. Hansson, Göran V. Hansson

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Electroluminescence studies of Er and SiO co-doped Si layers prepared by molecular beam epitaxy von Du, Chun-Xia, Ni, Wei-Xin, Joelsson, Kenneth B, Duteil, Fabrice, Hansson, Göran V

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Light emitting SiGe/I-Si/si:Er:O tunneling diodes prepared by molecular beam epitaxy von NI, W.-X, DU, C.-X, DUTEIL, F, POZINA, G, HANSSON, G. V

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Efficient 1.54 μm light emission from Si/SiGe/Si:Er:O transistors prepared by differential MBE von Du, Chun-Xia, Duteil, Fabrice, Hansson, Göran V., Ni, Wei-Xin

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Growth of high quality Ge films on Si(111) using Sb as surfactant von Larsson, Mats I., Ni, Wei-Xin, Joelsson, Kenneth, Hansson, Göran V.

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Growth-temperature-dependent band alignment in Si ∕ Ge quantum dots from photoluminescence spectroscopy von Larsson, M., Elfving, A., Ni, W.-X., Hansson, G. V., Holtz, P. O.

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Er-doped edge emitting devices with a SiGe waveguide von Du, Chun-Xia, Ni, Wei-Xin, Joelsson, Kenneth B, Duteil, Fabrice, Hansson, Göran V

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Asymmetric relaxation of SiGe∕Si(110) investigated by high-resolution x-ray diffraction reciprocal space mapping von Elfving, A., Zhao, M., Hansson, G. V., Ni, W.-X.

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Optimization of growth conditions for strained Si/Si1-yCy structures von JOELSSON, K. B, NI, W.-X, POZINA, G, HULTMAN, L, HANSSON, G. V

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Luminescence from Si-Si1-xGex/Si1-yCy-Si structures von JOELSSON, K. B, POZINA, G, NI, W.-X, DU, C.-X, HANSSON, G. V

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Three-terminal Ge dot/SiGe quantum-well photodetectors for near-infrared light detection von Elfving, A., Karim, A., Hansson, G. V., Ni, W.-X.

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Studies of Er/F doped p-i-n Si light emitting diodes prepared by molecular beam epitaxy von Du, Chun-Xia, Ni, Wei-Xin, Pozina, Galia, Joelsson, Kenneth B, Hansson, Göran V

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Method using reflection high-energy electron diffraction intensity to determine the solid solubility limit for boron in silicon and Si1− xGex layers von Larsson, Mats I., Hansson, Göran V.

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Bias-dependent scanning tunneling microscopy study of the oxygen-adsorbed Si(111)-(7×7) surface: Observation of metastable molecular oxygen von Sakamoto, Kazuyuki, Jemander, S. Thorbjörn, Hansson, Göran V., Uhrberg, Roger I. G.

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Silicon-based structures for IR light emission von Hansson, Göran V, Ni, Wei-Xin, Joelsson, Kenneth B, Buyanova, I A

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Influence of Er and O concentrations on the microstructure and luminescence of Si:Er/O LEDs von Karim, A, Hansson, G V, Linnarsson, M K

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Surface State Bands of Semiconductor Surfaces with Adsorbed Overlayers von Hansson, Göran V

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SiGe (Ge-dot) heterojunction phototransistors for efficient light detection at 1.3-1.55 µm von Elfving, Anders, Hansson, Göran V., Ni, Wei-Xin

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