Accurate dependence of gallium nitride thermal conductivity on dislocation density von Mion, C., Muth, J. F., Preble, E. A., Hanser, D.

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Fabrication and characterization of native non-polar GaN substrates von Hanser, D., Liu, L., Preble, E.A., Udwary, K., Paskova, T., Evans, K.R.

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Growth and characterization of green GaInN-based light emitting diodes on free-standing non-polar GaN templates von Detchprohm, T., Zhu, M., Li, Y., Xia, Y., Liu, L., Hanser, D., Wetzel, C.

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AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization von Storm, D.F., Katzer, D.S., Roussos, J.A., Mittereder, J.A., Bass, R., Binari, S.C., Hanser, D., Preble, E.A., Evans, K.R.

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Semi-insulating GaN substrates for high-frequency device fabrication von Freitas, J.A., Gowda, M., Tischler, J.G., Kim, J.-H., Liu, L., Hanser, D.

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Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors von Lee, W., Ryou, J.-H., Yoo, D., Limb, J., Dupuis, R. D., Hanser, D., Preble, E., Williams, N. M., Evans, K.

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The Impact of a Motivational Curriculum Upon Criminal Thinking Among Incarcerated Men von Hanser, Robert D., Kuanliang, Attapol, Horne, Anissa, Hanser, Gina M., Horne, Alexis

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High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma von Smith, S. A., Wolden, C. A., Bremser, M. D., Hanser, A. D., Davis, R. F., Lampert, W. V.

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Microwave power performance of MBE-grown AlGaN/GaN HEMTs on HVPE GaN substrates von STORM, D. F, ROUSSOS, J. A, KATZER, D. S, MITTEREDER, J. A, BASS, R, BINARI, S. C, HANSER, D, PREBLE, E. A, EVANS, K

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Light-emitting diode development on polar and non-polar GaN substrates von Wetzel, C., Zhu, M., Senawiratne, J., Detchprohm, T., Persans, P.D., Liu, L., Preble, E.A., Hanser, D.

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Dislocation analysis in homoepitaxial GaInN/GaN light emitting diode growth von Detchprohm, T., Xia, Y., Xi, Y., Zhu, M., Zhao, W., Li, Y., Schubert, E.F., Liu, L., Tsvetkov, D., Hanser, D., Wetzel, C.

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Characterization of GaInN/GaN layers for green emitting laser diodes von Wetzel, C., Li, Yufeng, Senawiratne, J., Zhu, Mingwei, Xia, Yong, Tomasulo, S., Persans, P.D., Liu, Lianghong, Hanser, D., Detchprohm, T.

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Using local law enforcement to enhance immigration law in the United States: a legal and social analysis von Hanser, Robert D.

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Blue light emitting diodes grown on freestanding (11-20) a-plane GaN substrates von Liu, J. P., Limb, J. B., Ryou, J.-H., Yoo, D., Horne, C. A., Dupuis, R. D., Wu, Z. H., Fischer, A. M., Ponce, F. A., Hanser, A. D., Liu, L., Preble, E. A., Evans, K. R.

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Microwave performance and structural characterization of MBE-grown AlGaN/GaN HEMTs on low dislocation density GaN substrates von Storm, D.F., Katzer, D.S., Roussos, J.A., Mittereder, J.A., Bass, R., Binari, S.C., Zhou, Lin, Smith, David J., Hanser, D., Preble, E.A., Evans, K.R.

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III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge von Liu, J. P., Ryou, J.-H., Yoo, D., Zhang, Y., Limb, J., Horne, C. A., Shen, S.-C., Dupuis, R. D., Hanser, A. D., Preble, E. A., Evans, K. R.

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Gang-related cyber and computer crimes: Legal aspects and practical points of consideration in investigations von Hanser, Robert D.

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Deep centers in semi-insulating Fe-doped native GaN substrates grown by hydride vapour phase epitaxy von Fang, Z.-Q., Claflin, B., Look, D. C., Elhamri, S., Smith, H. E., Mitchel, W. C., Hanser, D., Preble, E. A., Evans, K. R.

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Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics von Paskova, T., Preble, E. A., Hanser, A. D., Evans, K. R., Kröger, R., Paskov, P. P., Cheng, A. J., Park, M., Grenko, J. A., Johnson, M. A. L.

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Enlargement of bulk non-polar GaN substrates by HVPE regrowth von Lai, K. Y., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Hanser, A. D., Preble, E. A., Liu, L., Paskova, T., Evans, K. R.

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