Low leakage ZrO2 based capacitors for sub 20 nm dynamic random access memory technology nodes von Pešić, Milan, Knebel, Steve, Geyer, Maximilian, Schmelzer, Sebastian, Böttger, Ulrich, Kolomiiets, Nadiia, Afanas'ev, Valeri V., Cho, Kyuho, Jung, Changhwa, Chang, Jaewan, Lim, Hanjin, Mikolajick, Thomas, Schroeder, Uwe

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Effects of the flux-controlled cation off-stoichiometry in SrRuO3 grown by molecular beam epitaxy on its physical and electrical properties von Kim, Beomjong, Na, Byunghoon, Kwon, Youngnam, Jeong, Myoungho, Kim, Yongsung, Lim, Hanjin, Yoon, Euijoon

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Opportunity for band alignment manipulation of perovskite oxide stacks by interfacial dipole layer formation von Tamura, Atsushi, Jang, Seungwoo, Park, Young-Geun, Lim, Hanjin, Kita, Koji

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Depth resolved band alignments of ultrathin TiN/ZrO2 and TiN/ZrO2-Al2O3-ZrO2 dynamic random access memory capacitors von Lee, Sang Yeon, Chang, Jaewan, Kim, Younsoo, Lim, HanJin, Jeon, Hyeongtag, Seo, Hyungtak

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Ultra-thin ZrO2/SrO/ZrO2 insulating stacks for future dynamic random access memory capacitor applications von Knebel, Steve, Pešić, Milan, Cho, Kyuho, Chang, Jaewan, Lim, Hanjin, Kolomiiets, Nadiia, Afanas'ev, Valeri V., Muehle, Uwe, Schroeder, Uwe, Mikolajick, Thomas

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Interfacial engineering of ZrO2 metal-insulator-metal capacitor using Al2O3/TiO2 buffer layer for improved leakage properties von Shin, Heecheol, Choi, Hyobin, Lim, Jaeseong, Lee, Wanggon, Mohit, Kumar, Kim, Younsoo, Jung, Hyung-Suk, Lim, Hanjin, Seo, Hyungtak

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The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications von Song, Hyoseok, Jeon, Heeyoung, Shin, Changhee, Shin, Seokyoon, Jang, Woochool, Park, Joohyun, Chang, Jaewan, Choi, Jae Hyoung, Kim, Younsoo, Lim, HanJin, Seo, Hyungtak, Jeon, Hyeongtag

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Conduction barrier offset engineering for DRAM capacitor scaling von Pešić, Milan, Knebel, Steve, Cho, Kyuho, Jung, Changhwa, Chang, Jaewan, Lim, Hanjin, Kolomiiets, Nadiia, Afanas’ev, Valeri V., Mikolajick, Thomas, Schroeder, Uwe

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Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO2 Thin Films von Song, Seokhwi, Kim, Eungju, Kim, Kyunghoo, Bae, Jangho, Lee, Jinho, Jung, Chang Hwa, Lim, Hanjin, Jeon, Hyeongtag

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Cost-Effective Silicon Vertical Diode Switch for Next-Generation Memory Devices von LEE, Kong-Soo, HAN, Jae-Jong, LIM, Hanjin, NAM, Seokwoo, CHUNG, Chilhee, JEONG, Hong-Sik, PARK, Hyunho, JEONG, Hanwook, CHOI, Byoungdeog

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Al2O3 blocking layer inserted ZrO2 Metal-Insulator-Metal capacitor for the improved electrical and interfacial properties von Song, Hongseon, Kim, Dokyoung, Kang, Sangyeol, Jung, Hyungsuk, Lim, HanJin, Yong, Kijung

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Atomic layer deposition of molybdenum oxide using (NtBu)2(NMe2)2Mo, hydrogen peroxide (H2O2), and ozone (O3) for DRAM application von Lee, Seunghwan, Yang, Hae Lin, Kim, Beomseok, Lee, Jinho, Lim, Hanjin, Park, Jin-Seong

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Characteristics of High‐Crystallinity ZrO 2 Thin Films Deposited Using Remote Plasma Atomic Layer Deposition von Song, Seokhwi, Jung, Chanwon, Kim, Jisoo, Kim, Younsoo, Lim, Hanjin, Jeon, Hyeongtag

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Characteristics of High‐Crystallinity ZrO2 Thin Films Deposited Using Remote Plasma Atomic Layer Deposition von Song, Seokhwi, Jung, Chanwon, Kim, Jisoo, Kim, Younsoo, Lim, Hanjin, Jeon, Hyeongtag

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Stabilization of the tetragonal phase in ZrO2 thin films according to ozone concentration using atomic layer deposition von Song, Seokhwi, Kim, Eungju, Kim, Kyunghoo, Bae, Jangho, Lee, Jinho, Jung, Chang Hwa, Lim, Hanjin, Jeon, Hyeongtag

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Low-temperature-atomic-layer-deposition of SiO2 using various organic precursors von Ahn, Sehyoung, Kim, Yunsu, Kang, Sangyeoul, Im, Kivin, Lim, Hanjin

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A Route to MoO2 film fabrication via atomic layer deposition using Mo(IV) precursor and oxygen reactant for DRAM applications von Yoon, Ara, Yang, Hae Lin, Lee, Sanghoon, Lee, Seunghwan, Kim, Beomseok, Jung, Changhwa, Lim, Hanjin, Park, Jin-Seong

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Improvement of the electrical and interfacial propertie of TiN/ZrO2 by a modulated atomic layer deposition process with controlled O3 dosing von Song, Hongseon, Kim, Dokyoung, Kim, Younsoo, Jung, Hyungsuk, Lim, HanJin, Lee, Seunghyup, Yong, Kijung

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Structure of Li5AlS4 and comparison with other lithium-containing metal sulfides von Lim, Hanjin, Kim, Sung-Chul, Kim, Jaegyeom, Kim, Young-Il, Kim, Seung-Joo

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Crystallinity-Controlled Atomic Layer Deposition of Ti-Doped ZrO 2 Thin Films von Song, Seokhwi, Kim, Eungju, Kim, Kyunghoo, Bae, Jangho, Lee, Jinho, Jung, Chang Hwa, Lim, Hanjin, Jeon, Hyeongtag

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