Silicon Nanowire Arrays for Label-Free Detection of DNA von Gao, Zhiqiang, Agarwal, Ajay, Trigg, Alastair D, Singh, Navab, Fang, Cheng, Tung, Chih-Hang, Fan, Yi, Buddharaju, Kavitha D, Kong, Jinming

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Detection of MicroRNAs Using Target-Guided Formation of Conducting Polymer Nanowires in Nanogaps von Fan, Yi, Chen, Xiantong, Trigg, Alastair D, Tung, Chih-hang, Kong, Jinming, Gao, Zhiqiang

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Strained n-Channel FinFETs Featuring In Situ Doped Silicon-Carbon (\hbox\hbox) Source and Drain Stressors With High Carbon Content von Tsung-Yang Liow, Kian-Ming Tan, Weeks, D., Rinus Lee, Ming Zhu, Keat-Mun Hoe, Chih-Hang Tung, Bauer, M., Spear, J., Thomas, S.G., Samudra, G.S., Balasubramanian, N., Yee-Chia Yeo

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Performance Enhancement in Uniaxial Strained Silicon-on-Insulator N-MOSFETs Featuring Silicon-Carbon Source/Drain Regions von Kah-Wee Ang, King-Jien Chui, Chih-Hang Tung, Balasubramanian, N., Samudra, G.S., Yee-Chia Yeo

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Aluminum oxynitride interfacial passivation layer for high-permittivity gate dielectric stack on gallium arsenide von Zhu, Ming, Tung, Chih-Hang, Yeo, Yee-Chia

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Direct Detection of Nucleic Acids by Tagging Phosphates on Their Backbones with Conductive Nanoparticles von Fan, Yi, Chen, Xiantong, Kong, Jinming, Tung, Chih-hang, Gao, Zhiqiang

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In Situ Surface Passivation and CMOS-Compatible Palladium-Germanium Contacts for Surface-Channel Gallium Arsenide MOSFETs von Hock-Chun Chin, Ming Zhu, Chih-Hang Tung, Samudra, G.S., Yee-Chia Yeo

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Quantum Size Effects on Dielectric Constants and Optical Absorption of Ultrathin Silicon Films von GANG ZHANG, YU, Ming-Bin, TUNG, Chih-Hang, LO, Guo-Qiang

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Schottky-Ohmic transition in metal-all-around electrical contacts to silicon nanowires von Wang, Zhong-Rui, Zhang, Gang, Pey, Kin-Leong, Tung, Chih-Hang, Lo, Guo-Qiang

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Dielectric breakdown mechanisms in gate oxides von Lombardo, Salvatore, Stathis, James H., Linder, Barry P., Pey, Kin Leong, Palumbo, Felix, Tung, Chih Hang

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Fundamental narrow MOSFET gate dielectric breakdown behaviors and their impacts on device performance von Chih-Hang Tung, Pey, K.-L., Tang, L.J., Cao, Y., Radhakrishnan, M.K., Lin, W.H.

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Strained p-Channel FinFETs With Extended \Pi -Shaped Silicon-Germanium Source and Drain Stressors von Kian-Ming Tan, Tsung-Yang Liow, Lee, R.T.P., Keat Mun Hoe, Chih-Hang Tung, Balasubramanian, N., Samudra, G.S., Yee-Chia Yeo

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Strained n-Channel Transistors With Silicon Source and Drain Regions and Embedded Silicon/Germanium as Strain-Transfer Structure von Kah-Wee Ang, Chih-Hang Tung, Balasubramanian, N., Samudra, G.S., Yee-Chia Yeo

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Strained -MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance von Kah-Wee Ang, Jianqiang Lin, Chih-Hang Tung, Balasubramanian, N., Samudra, G.S., Yee-Chia Yeo

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Study of Dopant Redistribution at the Substrate-Source/Drain p-n Junction of Nanoscale MOSFET During Progressive Breakdown von Vui-Lip Lo, Pey, K.-L., Lim, W.-T., Diing-Shenp Ang, Chih-Hang Tung

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A nanoscale analysis of the leakage current in SiO2 breakdown von Zhang, Gang, Li, Xiang, Tung, Chih-Hang, Pey, Kin-Leong, Lo, Guo-Qiang

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Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon-Carbon Source/Drain and Tensile-Stress Liner von Kah-Wee Ang, King-Jien Chui, Chih-Hang Tung, Balasubramanian, N., Ming-Fu Li, Samudra, G.S., Yee-Chia Yeo

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Work Function Tuning and Material Characteristics of Lanthanide-Incorporated Metal Nitride Gate Electrodes for NMOS Device Applications von Ren, C., Chan, D.S.H., Li, M.-F., Loh, W.-Y., Balakumar, S., Tung, C.H., Balasubramanian, N., Kwong, D.-L.

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Study of surface passivation of strained indium gallium arsenide by vacuum annealing and silane treatment von Chin, Hock-Chun, Wang, Benzhong, Lim, Poh-Chong, Tang, Lei-Jun, Tung, Chih-Hang, Yeo, Yee-Chia

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N-Channel (110)-Sidewall Strained FinFETs With Silicon-Carbon Source and Drain Stressors and Tensile Capping Layer von Tsung-Yang Liow, Kian-Ming Tan, Lee, R.T.P., Chih-Hang Tung, Samudra, G.S., Balasubramanian, N., Yee-Chia Yeo

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