Fast and long retention-time nano-crystal memory von Hanafi, H.I., Tiwari, S., Khan, I.

Volltext

A model for anomalous short-channel behavior in submicron MOSFETs von Hanafi, H.I., Noble, W.P., Bass, R.S., Varahramyan, K., Lii, Y., Dally, A.J.

Volltext

Off-state current and performance analysis for double-gate CMOS with non-self-aligned back gate von Keunwoo Kim, Hanafi, H.I., Jin Cai, Ching-Te Chuang

Volltext

Design and characterization of a CMOS off-chip driver/receiver with reduced power-supply disturbance von Hanafi, H.I., Dennard, R.H., Chen, C.-L., Weiss, R.J., Zicherman, D.S.

Volltext

A new 'shift and ratio' method for MOSFET channel-length extraction von Taur, Y., Zicherman, D.S., Lombardi, D.R., Restle, P.J., Hsu, C.H., Nanafi, H.I., Wordeman, M.R., Davari, B., Shahidi, G.G.

Volltext

Sidewall oxidation of polycrystalline-silicon gate von Wong, C.Y., Piccirillo, J., Bhattacharyya, A., Taur, Y., Hanafi, H.I.

Volltext

Flicker noise in Hg1−xCdxTe von Hanafi, H.I., van der Ziel, A.

Volltext

Flicker noise due to grain boundaries in n-type Hg1−xCdxTe von Hanafi, H.I., Van Der Ziel, A.

Volltext

A 20-ns 128-kbitx 4 high speed DRAM with 330-Mbit/s data rate von Lu, N C C, Chao, H H, Hwang, W, Henkels, W H, Rajeevakumar, T V, Hanafi, H I, Terman, L M, Franch, R L

Volltext

A 20-ns 128-kbit×4 high-speed DRAM with 330-Mbit/s data rate von LU, N. C. C, CHAO, H. H, WEI HWANG, HENKELS, W. H, RAJEEVAKUMAR, T. V, HANAFI, H. I, TERMAN, L. M, FRANCH, R. L

Volltext

Submicron CMOS Circuit Simulation Model Accurate from Liquid Nitrogen to Room Temperature von Hanafi, H.I., Buccelot, T.J., Zicherman, D.S., Weiss, R.W., Restle, P.J.

Volltext bestellen

Device advantages of DI-LDD/LDD MOSFET over DD MOSFET von Hanafi, Hussein I.

Volltext

An accurate and simple MOSFET model for computer-aided design von Hanafi, H.I., Camnitz, L.H., Dally, A.J.

Volltext

Extremely-scaled double-gate CMOS with non-self-aligned back gate von Keunwoo Kim, Hanafi, H.I., Jin Cai, Ching-Te Chuang

Volltext

0.5 μm CMOS Device Design and Characterization von Hanafi, H. I., Wordeman, M. R., Wang, L. K., Taur, Y., Sun, J. Y. C., Dennard, R. H., Zicherman, D. S., Rodriguez, M. D., Haddad, N., Edenfeld, A., Polavarapu, M.

Volltext bestellen

Contact noise in n-type Hg1-xCdxTe photoconductors at 77 K von Hussein I. Hanafi, Aldert van der Ziel

Volltext

A scalable low power vertical memory von Hanafi, H.I., Tiwari, S., Burns, S., Kocon, W., Thomas, A., Garg, N., Matsushita, K.

Volltext

Monitoring of insecticides resistance in main malaria vectors in a malarious area of Kahnooj district, Kerman province, southeastern Iran von Vatandoost, H, Mashayekhi, M, Abaie, M R, Aflatoonian, M R, Hanafi-Bojd, A A, Sharifi, I

Volltext

Modeling spatial distribution of Rhombomys opimus as the main reservoir host of zoonotic cutaneous leishmaniasis in northeastern Iran von Sofizadeh, A, Hanafi-Bojd, A, Shoraka, H

Volltext

Enabling Remote Health-Caring Utilizing IoT Concept over LTE-Femtocell Networks von Hindia, M N, Rahman, T A, Ojukwu, H, Hanafi, E B, Fattouh, A

Volltext