The Effect of Hydrogen Peroxide in a Citric Acid Based Copper Slurry on Cu Polishing von Eom, Dae-Hong, Kim, In-Kwon, Han, Ja-Hyung, Park, Jin-Goo

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Formation of Cobalt-BTA Complexes and Their Removal from Various Surfaces Relevant to Cobalt Interconnect Applications von Seo, Jihoon, Vegi, S. S. R. K. Hanup, Ranaweera, C. K., Baradanahalli, N. K., Han, Ja-Hyung, Koli, Dinesh, Babu, S. V.

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A New Approach to the Formation Mechanism of Tungsten Void Defect in Chemical Mechanical Polishing von Kim, Hong Jin, Egan, Bryan, Shi, Xingzhao, Han, Ja-Hyung

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Effect of Polish By-Products on Copper Chemical Mechanical Polishing Behavior von Han, Ja-Hyung, Hah, Sang-Rok, Kang, Young-Jae, Park, Jin-Goo

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Study on the Mechanism of Nano-Flake Defect during Tungsten Contact Chemical Mechanical Polishing von Kim, Hong Jin, Lawyer, Adam, Egan, Bryan, Ng, ManFai, Huang, Chih-Chieh, Han, Ja-Hyung

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CMP: Consideration of Stop-on Selectivity in Advanced Node Semiconductor Manufacturing Technology von Tsai, Stan, Amanapu, Hari, Xie, Ruilong, Zhang, John, Chung, Kisup, Labelle, Cathy, Huang, Haigou, Han, Ja-Hyung, Koli, Dinesh R, Surisetty, Charan

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Study on the Polishing Performance of Silicon Carbonitride (SiCN) von Qin, Liqiao, Gu, Sipeng, Kim, Hong Jin, Han, Ja-Hyung, Koli, Dinesh R

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The Effect of Frictional and Adhesion Forces Attributed to Slurry Particles on the Surface Quality of Polished Copper von Hong, Yi-Koan, Han, Ja-Hyung, Kim, Tae-Gon, Park, Jin-Goo, Busnaina, Ahmed A.

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A Study on Water-Mark Defects in Copper/Low-k Chemical Mechanical Polishing von Choi, Kyo Se, Park, Byung Lyul, Han, Ja Hyung, Kang, Young Jae, Hah, Sang Rok, Chung, Ju Hyuk, Koo, Ja Eung, Lee, Sun Yong, Park, Jin Goo

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Cobalt CMP Development for 7nm Logic Device von Wu, Changhong, Han, Ja-Hyung, Shi, Xingzhao, Koli, Dinesh R, Penigalapati, Dinesh

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Adhesion and Removal of Alumina Slurry Particles on Wafer Surfaces in Cu CMP von Hong, Yi Koan, Han, Ja Hyung, Lee, Jin Hyung, Busnaina, Ahmed A., Park, Jin Goo

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GATE STRUCTURES von HAN, Ja-Hyung, SHI, Xingzhao, KOLI, Dinesh

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Cobalt CMP Development for 7nm Logic Device von Wu, Changhong, Han, Ja-Hyung, Shi, Xingzhao, Koli, Dinesh R, Penigalapati, Dinesh

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Initial Study on the Polishing Performance of Nitrogen-Doped Silicon Carbide (SiC) von Qin, Liqiao, Gu, Sipeng, Kim, Hong Jin, Han, Ja-Hyung, Koli, Dinesh R

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CMP: Consideration of Stop-on Selectivity in Advanced Node Semiconductor Manufacturing Technology von Tsai, Stan, Amanapu, Hari, Xie, Ruilong, Zhang, John, Chung, Kisup, Labelle, Cathy, Huang, Haigou, Han, Ja-Hyung, Koli, Dinesh R, Surisetty, Charan

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Effects of Patterns on Corrosion in Cu CMP von Park, Byung Lyul, Han, Ja Hyung, Hong, Duk Ho, Busnaina, Ahmed A., Koo, Ja Eung, Eom, Dae Hong, Park, Jin Goo, Cho, In-Soo, Kim, Seong Il

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Retainer ring, Polishing head, and chemical mechanical polishing apparatus von Han, Ja-hyung

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Siloxane and organic-based MOL contact patterning von Lim, SangWoo, Huang, Haigou, Krishnan, Bharat, Bates, Kenneth A, Pal, Shyam, Maeng, Chang Ho, Liu, Jinping, Wei, Andy, Ozzello, Anthony, Dai, Xintuo, Bouche, Guillaume, Han, Ja-Hyung, Cao, Huy M, Sheng, Haifeng, Liu, Huang

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Method of manufacturing semiconductor device for protecting Cu layer from post chemical mechanical polishing-corrosion and chemical mechanical polishing equipment used in the same von Han, Ja-Hyung

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SILOXANE AND ORGANIC-BASED MOL CONTACT PATTERNING von CAO Huy M, BATES Kenneth A, PAL Shyam, BOUCHE Guillaume, HUANG Haigou, LIU Huang, DAI Xintuo, KRISHNAN Bharat, WEI Andy, LIM SangWoo, SHENG Haifeng, LIU Jinping, HAN Ja-Hyung, OZZELLO Anthony, MAENG Chang Ho

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