Germanium-Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration von Yang, Yue, Han, Genquan, Guo, Pengfei, Wang, Wei, Gong, Xiao, Wang, Lanxiang, Low, Kain Lu, Yeo, Yee-Chia

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Electronic band structure and effective mass parameters of Ge1-xSnx alloys von Lu Low, Kain, Yang, Yue, Han, Genquan, Fan, Weijun, Yeo, Yee-Chia

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Current transport mechanism of lateral Schottky barrier diodes on β-Ga2O3/SiC structure with atomic level interface von Xu, Wenhui, Shen, Zhenghao, Qu, Zhenyu, Zhao, Tiancheng, Yi, Ailun, You, Tiangui, Han, Genquan, Ou, Xin

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Low Voltage Operating 2D MoS2 Ferroelectric Memory Transistor with Hf1-xZrxO2 Gate Structure von Zhang, Siqing, Liu, Yan, Zhou, Jiuren, Ma, Meng, Gao, Anyuan, Zheng, Binjie, Li, Lingfei, Su, Xin, Han, Genquan, Zhang, Jincheng, Shi, Yi, Wang, Xiaomu, Hao, Yue

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Analytical Model for the Channel Maximum Temperature in Ga2O3 MOSFETs von Jia, Xiaole, Hu, Haodong, Han, Genquan, Liu, Yan, Hao, Yue

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ZrO2 Ferroelectric Field-Effect Transistors Enabled by the Switchable Oxygen Vacancy Dipoles von Liu, Huan, Peng, Yue, Han, Genquan, Liu, Yan, Zhong, Ni, Duan, Chungang, Hao, Yue

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Synaptic Behaviors in Ferroelectric-Like Field-Effect Transistors with Ultrathin Amorphous HfO2 Film von Peng, Yue, Xiao, Wenwu, Zhang, Guoqing, Han, Genquan, Liu, Yan, Hao, Yue

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Ferroelectric Negative Capacitance GeSn PFETs With Sub-20 mV/decade Subthreshold Swing von Jiuren Zhou, Genquan Han, Yue Peng, Yan Liu, Jincheng Zhang, Qing-Qing Sun, Zhang, David Wei, Yue Hao

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Effects of Post Annealing on Electrical Performance of Polycrystalline Ga2O3 Photodetector on Sapphire von Hu, Haodong, Liu, Yuchen, Han, Genquan, Fang, Cizhe, Zhang, Yanfang, Liu, Huan, Wang, Yibo, Liu, Yan, Ye, Jiandong, Hao, Yue

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High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces von Fang, Cizhe, Yang, Qiyu, Yuan, Qingchen, Gan, Xuetao, Zhao, Jianlin, Shao, Yao, Liu, Yan, Han, Genquan, Hao, Yue

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Dynamic evolution of oxygen vacancies during cycling in antiferroelectric HfxZr1−xO2 von Qian, Haoji, Shen, Rongzong, Zhang, Hongrui, Xu, Jiacheng, Lin, Gaobo, Ding, Yian, Gu, Jiani, Yu, Xiao, Liu, Yan, Jin, Chengji, Chen, Jiajia, Han, Genquan

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Spin valve effect in the van der Waals heterojunction of Fe3GeTe2/tellurene/Fe3GeTe2 von Zeng, Xiangyu, Zhang, Liang, Zhang, Yang, Yang, Fazhi, Zhou, Liqin, Wang, Yong, Fang, Cizhe, Li, Xiaoxi, Zheng, Siying, Liu, Yang, Liu, Yan, Wang, Xiaozhi, Hao, Yue, Han, Genquan

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Characterizing polarization switching kinetics of ferroelectric Hf0.5Zr0.5O2 at cryogenic temperature von Xu, Jiacheng, Shen, Rongzong, Qian, Haoji, Lin, Gaobo, Gu, Jiani, Rong, Jian, Liu, Huan, Ding, Yian, Zhang, Miaomiao, Liu, Yan, Jin, Chengji, Chen, Jiajia, Han, Genquan

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Theoretical simulation of time-related electrical performance of 63NiO/ZnO integrated betavoltaic battery von Zhang, Yu, Lu, Jingbin, Yuan, Xinxu, Li, Xiaoyi, Liu, Xinrui, Li, Qingyang, Liu, Yuxin, Li, Haolin, Cui, Qiming, Tian, Fubo, Liang, Lei, Zeng, Yugang, Han, Genquan

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Ferroelectric-like Behavior Originating from Oxygen Vacancy Dipoles in Amorphous Film for Non-volatile Memory von Peng, Yue, Han, Genquan, Liu, Fenning, Xiao, Wenwu, Liu, Yan, Zhong, Ni, Duan, Chungang, Feng, Ze, Dong, Hong, Hao, Yue

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Theoretical Investigation of Performance Enhancement in GeSn/SiGeSn Type-II Staggered Heterojunction Tunneling FET von Wang, Hongjuan, Han, Genquan, Liu, Yan, Hu, Shengdong, Zhang, Chunfu, Zhang, Jincheng, Hao, Yue

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Ge N-Channel MOSFETs with ZrO2 Dielectric Achieving Improved Mobility von Chou, Lulu, Liu, Yan, Xu, Yang, Peng, Yue, Liu, Huan, Yu, Xiao, Han, Genquan, Hao, Yue

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Exploration of switching characteristics of 4H-SiC floating junction Schottky barrier diodes with stronger blocking voltage capability von Nan, Yagong, Han, Genquan

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Steep-slope vertical-transport transistors built from sub-5 nm Thin van der Waals heterostructures von Yang, Qiyu, Luo, Zheng-Dong, Duan, Huali, Gan, Xuetao, Zhang, Dawei, Li, Yuewen, Tan, Dongxin, Seidel, Jan, Chen, Wenchao, Liu, Yan, Hao, Yue, Han, Genquan

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Design technology co-optimization towards sub-3 nm technology nodes von Han, Genquan, Hao, Yue

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