Effect of the Ge Mole Fraction on the Electrical Characteristics of Single and Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS) von Ismail, Saad, Bolong, Nurmin, Anuar Mohamad, Khairul, Mohd Zuhir, Hamzah, Bablu, Ghosh, Bun Seng, Chan

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In-Depth Design and Simulation Analysis of Vertical Strained Impact Ionization MOSFET (VESIMOS) von Saad, Ismail, Hamzah, Mohd Zuhir, Chan, Bunseng, Bolong, Nurmin

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Breakdown Voltage Reduction Analysis with Adopting Dual Channel Vertical Strained SiGe Impact Ionization MOSFET (VESIMOS) von Saad, Ismail, Chan, Bunseng, Hamzah, Mohd Zuhir, Bolong, Nurmin, Mohamad, Khairul Anuar

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Doping Concentrations Analysis on The Performance of Vertical Strained-SiGe Impact Ionization MOSFET Incorporating Dielectric Pocket (VESIMOS-DP) von Hamzah, Mohd Zuhir, Saad, Ismail, Chan, Bunseng, Mohamad, Khairul Anuar, Ghosh, Bablu K., Bolong, Nurmin, Ismail, Razali

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Electromyogram (EMG) Signal Processing Analysis for Clinical Rehabilitation Application von Chan, Bunseng, Bais, Nur Husna, Saad, Ismail, Hamzah, Mohd Zuhir, Bolong, Nurmin

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Avalanche Characteristic of Vertical Impact Ionization MOSFET (IMOS) Equivalent Circuit Model von Bacho, Andee Hazwani Syazana, Saad, Ismail, Chan, Bunseng, Hamzah, Mohd Zuhir, Bolong, Nurmin

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Compatibility issues of Si technology with higher band gap materials for RF applications von Ghosh, B. K., Saad, I., Mohamad, K. A., Bolong, N., Parimon, N., Alias, A., Hamzah, M. Z.

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