Empirically Verified Thermodynamic Model of Gate Capacitance and Threshold Voltage of Nanoelectronic MOS Devices With Applications to HfO2 and ZrO2 Gate Insulators von Hamadeh, E.A, Niemann, D.L, Gunther, N.G, Rahman, M

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Empirically verified thermodynamic model of gate capacitance and threshold voltage of nanoelectronic MOS devices with applications to HfO2 and ZrO2 gate insulators : Simulation and... von HAMADEH, Emad A, NIEMANN, Darrell L, GUNTHER, Norman G, RAHMAN, Mahmudur

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Gate line edge roughness amplitude and frequency variation effects on intra die MOS device characteristics von Hamadeh, Emad, Gunther, Norman G., Niemann, Darrell, Rahman, Mahmud

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Interface and gate line edge roughness effects on intra die variance in mos device characteristics von Gunther, N., Hamadeh, E., Niemann, D., Rahman, M.

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Distributed test architecture for multiport RAMs or other circuitry von NARAYANA PIDUGU L, THAKUR SANGEETA, HAMADEH EMAD

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Distributed test architecture for multiport RAMs or other circuitry von Thakur, Sangeeta, Hamadeh, Emad, Narayana, Pidugu L

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Modeling intrinsic fluctuations in decananometer MOS devices due to gate line edge roughness (LER) von Gunther, N., Hamadeh, E., Niemann, D., Pesic, I., Rahman, M.

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Circuit, architecture and method for reading an address counter and/or matching a bus width through one or more synchronous ports von REZEANU STEFAN-CRISTIAN, SRINIVASARAGHAVAN VIJAY, GROSS ERIC, HAMADEH EMAD, MANNING ROBERT, ALLAN JAMES

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Circuit, architecture and method for reading an address counter and/or matching a bus width through one or more synchronous ports von Rezeanu, Stefan-Cristian, Allan, James, Hamadeh, Emad, Gross, Eric, Srinivasaraghavan, Vijay, Manning, Robert

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Determinants of family size in a Gulf Arab state: a comparison between two areas von Hamadeh, Randah R., Al-Roomi, Khaldoon, Masuadi, Emad

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