Empirically Verified Thermodynamic Model of Gate Capacitance and Threshold Voltage of Nanoelectronic MOS Devices With Applications to \hbox and \hbox Gate Insulators von Hamadeh, E.A., Niemann, D.L., Gunther, N.G., Rahman, M.

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Empirically Verified Thermodynamic Model of Gate Capacitance and Threshold Voltage of Nanoelectronic MOS Devices With Applications to HfO2 and ZrO2 Gate Insulators von Hamadeh, E.A, Niemann, D.L, Gunther, N.G, Rahman, M

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Rational design, synthesis, pharmacophore modeling, and docking studies for identification of novel potent DNA-PK inhibitors von Ihmaid, Saleh, Ahmed, Hany E.A., Al-Sheikh Ali, Adeeb, Sherif, Yousery E., Tarazi, Hamadeh M., Riyadh, Sayed M., Zayed, Mohamed F., Abulkhair, Hamada S., Rateb, Heba S.

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