STEM analysis of deformation and B distribution In nanosecond laser ultra-doped Si1−x B x von Hallais, Géraldine, Patriarche, Gilles, Desvignes, Léonard, Débarre, Dominique, Chiodi, Francesca

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Surface Modification of Conducting Substrates. Existence of Azo Bonds in the Structure of Organic Layers Obtained from Diazonium Salts von Doppelt, Pascal, Hallais, Géraldine, Pinson, Jean, Podvorica, Fetah, Verneyre, Sylvie

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Tuning Superconductivity in Nanosecond Laser‐Annealed Boron‐Doped Si1–xGex Epilayers von Nath, Shimul Kanti, Turan, Ibrahim, Desvignes, Léonard, Largeau, Ludovic, Mauguin, Olivia, Túnica, Marc, Amato, Michele, Renard, Charles, Hallais, Géraldine, Débarre, Dominique, Chiodi, Francesca

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Regular poly(para-phenylene) films bound to gold surfaces through the electrochemical reduction of diazonium salts followed by electropolymerization in an ionic liquid von Descroix, Stéphanie, Hallais, Géraldine, Lagrost, Corinne, Pinson, Jean

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Morphology of GaAs crystals heterogeneously integrated on nominal (001) Si by epitaxial lateral overgrowth on tunnel oxide via Ge nano-seeding von Coste, Marie, Molière, Timothée, Cherkashin, Nikolay, Hallais, Géraldine, Vincent, Laëtitia, Bouchier, Daniel, Renard, Charles

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Strain Measurement in Single Crystals by 4D-ED von Lábár, János L, Pécz, Béla, van Waveren, Aiken, Hallais, Géraldine, Desvignes, Léonard, Chiodi, Francesca

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Preparation of one- to four-branch silver nanostructures of various sizes by metallization of hybrid DNA–protein assemblies von Rudiuk, Sergii, Venancio-Marques, Anna, Hallais, Géraldine, Baigl, Damien

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Low temperature activation of Au/Ti getter film for application to wafer-level vacuum packaging von Wu, Ming, Moulin, Johan, Lani, Sébastien, Hallais, Géraldine, Renard, Charles, Bosseboeuf, Alain

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Imaging Thermoelectric Properties at the Nanoscale von Grauby, Stéphane, Ben Amor, Aymen, Hallais, Géraldine, Vincent, Laetitia, Dilhaire, Stefan

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Novel Heterostructured Ge Nanowires Based on Polytype Transformation von Vincent, Laetitia, Patriarche, Gilles, Hallais, Géraldine, Renard, Charles, Gardès, Cyrille, Troadec, David, Bouchier, Daniel

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High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed von Renard, Charles, Molière, Timothée, Cherkashin, Nikolay, Alvarez, José, Vincent, Laetitia, Jaffré, Alexandre, Hallais, Géraldine, Connolly, James Patrick, Mencaraglia, Denis, Bouchier, Daniel

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Electric-Field-Induced Phase Change in Copper Oxide Nanostructures von Hesabizadeh, Tina, Jebari, Nessrine, Madouri, Ali, Hallais, Géraldine, Clark, Trevor E, Behura, Sanjay K, Herth, Etienne, Guisbiers, Grégory

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Electrochemistry of a ferrocene-grafted cell-penetrating peptide von Messina, Pierluca, Hallais, Géraldine, Labbé, Eric, Béranger, Marie, Chassaing, Gérard, Lavielle, Solange, Mansuy, Christelle, Buriez, Olivier, Amatore, Christian

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Electro- and Photografting of Carbon or Metal Surfaces by Alkyl Groups von Chehimi, Mohamed M, Hallais, Géraldine, Matrab, Tarik, Pinson, Jean, Podvorica, Fetah I

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Pixel device based on a quantum well: Preliminary results on gate dielectrics von Hallais, Geraldine, Renard, Charles, Barbier, Antoine, Imbernon, Eric, Fourches, Nicolas

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Photochemical Grafting and Patterning of Metallic Surfaces by Organic Layers Derived from Acetonitrile von Berisha, Avni, Combellas, Catherine, Hallais, Géraldine, Kanoufi, Frédéric, Pinson, Jean, Podvorica, Fetah I

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STEM analysis of deformation and B distribution In nanosecond laser ultra-doped Si 1−x B x von Hallais, Géraldine, Patriarche, Gilles, Desvignes, Léonard, Débarre, Dominique, Chiodi, Francesca

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Tuning Superconductivity in Nanosecond Laser‐Annealed Boron‐Doped Si 1– x Ge x Epilayers von Nath, Shimul Kanti, Turan, Ibrahim, Desvignes, Léonard, Largeau, Ludovic, Mauguin, Olivia, Túnica, Marc, Amato, Michele, Renard, Charles, Hallais, Géraldine, Débarre, Dominique, Chiodi, Francesca

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Beyond the CMOS sensors: the DoTPiX pixel concept and technology for the International Linear Collider A von Fourches, Nicolas T, Hallais, Geraldine, Renard, Charles

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GaAs microcrystals selectively grown on silicon: Intrinsic carbon doping during chemical beam epitaxy with trimethylgallium von Molière, T., Jaffré, A., Alvarez, J., Mencaraglia, D., Connolly, J. P., Vincent, L., Hallais, G., Mangelinck, D., Descoins, M., Bouchier, D., Renard, C.

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