An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN von Aı̈choune, N, Potin, V, Ruterana, P, Hairie, A, Nouet, G, Paumier, E

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Formation mechanism and relative stability of the { 112 ¯ 0 } stacking fault atomic configurations in wurtzite (Al,Ga,In) nitrides von Ruterana, P., Barbaray, B., Béré, A., Vermaut, P., Hairie, A., Paumier, E., Nouet, G., Salvador, A., Botchkarev, A., Morkoç, H.

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A high-resistivity phase induced by swift heavy-ion irradiation of Bi: a probe for thermal spike damage? von Dufour, C, Audouard, A, Beuneu, F, Dural, J, Girard, J P, Hairie, A, Levalois, M, Paumier, E, Toulemonde, M

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Basal stacking faults and (10 2) twin energies by a semi-empirical tight-binding method for zinc and cadmium von Béré, A., Chen, J., Hairie, A., Nouet, G., Paumier, E.

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Energy of the Two Variants 11A and 11B in Silicon and Germanium by the Semi-Empirical Tight-Binding Method von Chen, J., Hairie, A., Paumier, E., Nouet, G.

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Precipitation of β-SiC in Si1−yCy alloys von Guedj, C., Dashiell, M. W., Kulik, L., Kolodzey, J., Hairie, A.

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Analysis of Distortions in 〈110〉 Tilt Silicon Bicrystals von Lebouvier, B., Hairie, A., Nouet, G., Paumier, E.

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Analysis of distortions in tilt silicon bicrystals von LEBOUVIER, B, HAIRIE, A, NOUET, G, PAUMIER, E

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Determination of the high c/a ratio of hexagonal metals with a semi-empirical tight-binding method von Béré, A, Chen, J, Hairie, A, Nouet, G, Paumier, E

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Carbon and germanium distributions in Si1−x−yGexCy layers epitaxially grown on Si(001) by RTCVD von Guedj, C., Portier, X., Hairie, A., Bouchier, D., Calvarin, G., Piriou, B.

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Calculation of the energy of extend defects in zinc by the semi-empirical tight-binding method von BERE, A, HAIRIE, A, NOUET, G, PAURNIER, E

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Calculation of the Energy of Extend Defects in Zinc by the Semi-Empirical Tight-Binding Method von Hairie, A., Béré, A., Paumier, E., Nouet, Gerard

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A Direct Method for Density Matrix Calculation: Application to Si Grain Boundaries in the Tight-Binding Scheme von Hairie, A., Hairie, F., Lebouvier, B., Paumier, E.

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The volume expansion of the {112̄0} planar defect in 2H–GaN/6H–SiC (0001) Si grown by MBE von Vermaut, P, Béré, A, Ruterana, P, Nouet, G, Hairie, A, Paumier, E

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Comparison of two O(N) methods for total-energy semi-empirical tight-binding calculation von Chen, J., Béré, A., Hairie, A., Nouet, G., Paumier, E.

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Comparison of Different Empirical Potentials for Energy Calculation of Grain Boundaries in Silicon at OK von Hairie, A., Hairie, F., Lebouvier, B., Paumier, E., Nouet, Gerard

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Carbon self-organization in the ternary Si1−x−yGexCy alloy von Guedj, C., Portier, X., Hairie, A., Bouchier, D., Calvarin, G., Piriou, B., Gautier, B., Dupuy, J. C.

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Potential energy of two structures of Σ = 11〈0 1 1〉 tilt grain boundary in silicon and germanium with empirical potentials and tight-binding methods von Chen, J., Lebouvier, B., Hairie, A., Nouet, G., Paumier, E.

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Modified Stillinger-Weber potential for planar defects modeling in GaN von BERE, A, VERMAUT, P, HAIRIE, A, PAUMIER, E, RUTERANA, P, NOUET, G

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Modified Stillinger-Weber Potential for Planar Defects Modeling in GaN von Hairie, A., Ruterana, Piere, Béré, A., Paumier, E., Vermaut, Philippe, Nouet, Gerard

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