On the nucleation, coalescence, and overgrowth of HVPE GaN on misoriented sapphire substrates and the origin of pinholes von Bohnen, Tim, de Jong, Aryan E.F., van Enckevort, Willem J.P., Weyher, Jan L., van Dreumel, Gerbe W.G., Ashraf, Hina, Hageman, Paul R., Vlieg, Elias

Volltext

Growth of scandium aluminum nitride nanowires on ScN(111) films on 6H-SiC substrates by HVPE von Bohnen, Tim, van Dreumel, Gerbe W. G., Hageman, Paul R., Algra, Rienk E., van Enckevort, Willem J. P., Vlieg, Elias, Verheijen, Marcel A., Edgar, James H.

Volltext

Enhanced growth rates and reduced parasitic deposition by the substitution of Cl2 for HCl in GaN HVPE von Bohnen, Tim, Ashraf, Hina, van Dreumel, Gerbe W.G., Verhagen, Sjoerd, Weyher, Jan L., Hageman, Paul R., Vlieg, Elias

Volltext

The nucleation of HCl and Cl2-based HVPE GaN on mis-oriented sapphire substrates von Bohnen, Tim, van Dreumel, Gerbe W. G., Weyher, Jan L., van Enckevort, Willem J. P., Ashraf, Hina, de Jong, Aryan E. F., Hageman, Paul R., Vlieg, Elias

Volltext

Reactions of cis-2,3-Dimethylaziridine, 3-Pyrroline and Pyrrolidine with Me3Al and Me3Ga: Adducts and Dimeric Amides von Zhang, Yuankui, Budzelaar, Peter H. M., Smits, Jan M. M., Gelder, René de, Hageman, Paul R., Gal, Anton W.

Volltext

Influence of the Structural and Compositional Properties of PECVD Silicon Nitride as a Passivation Layer for AlGaN HEMTs von Karouta, Fouad, Krämer, Mark, Kwaspen, J J., Grzegorczyk, Andrzej, Hageman, Paul, Hoex, Bram, Kessels, W. M., Klootwijk, Johan, Timmering, Eugène, Smit, Meint

Volltext

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates von Pernot, J., Bustarret, E., Rudziński, M., Hageman, P. R., Larsen, P. K.

Volltext

Enhanced growth rates and reduced parasitic deposition by the substitution of Cl 2 for HCl in GaN HVPE von Bohnen, Tim, Ashraf, Hina, van Dreumel, Gerbe W.G., Verhagen, Sjoerd, Weyher, Jan L., Hageman, Paul R., Vlieg, Elias

Volltext

Enhanced growth rates and reduced parasitic deposition by the substitution of Cl sub(2) for HCl in GaN HVPE von Bohnen, Tim, Ashraf, Hina, Van Dreumel, Gerbe WG, Verhagen, Sjoerd, Weyher, Jan L, Hageman, Paul R, Vlieg, Elias

Volltext

The nucleation of HCl and Cl 2 ‐based HVPE GaN on mis‐oriented sapphire substrates von Bohnen, Tim, van Dreumel, Gerbe W. G., Weyher, Jan L., van Enckevort, Willem J. P., Ashraf, Hina, de Jong, Aryan E. F., Hageman, Paul R., Vlieg, Elias

Volltext

Reactions of cis ‐2,3‐Dimethylaziridine, 3‐Pyrroline and Pyrrolidine with Me 3 Al and Me 3 Ga: Adducts and Dimeric Amides von Zhang, Yuankui, Budzelaar, Peter H. M., Smits, Jan M. M., Gelder, René de, Hageman, Paul R., Gal, Anton W.

Volltext

Applicator for crease setting composition von HAGEMAN, PAUL

Volltext bestellen

Automatically controlled applicator heads von PAUL HAGEMAN

Volltext bestellen

Raising yarn von PAUL HAGEMAN

Volltext bestellen

An examination of religious tax exemption policy under Section 501(c)(3) Internal Revenue Code [churches and other religious organizations] von Hageman, Paul H K

Volltext

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates von Pernot, Julien, Bustarret, Etienne, Rudzinski, Mariusz, Hageman, Paul R, Larsen, Poul K

Volltext bestellen

Influence of the Structural and Compositional Properties of PECVD Silicon Nitride as a Passivation Layer for AlGaN HEMTs von Karouta, Fouad, Krämer, Mark, Kwaspen, J J., Grzegorczyk, Andrzej, Hageman, Paul, Hoex, Bram, Kessels, W. M., Klootwijk, Johan, Timmering, Eugène, Smit, Meint

Volltext

Utilizing Patient Outcome Criteria to Measure the Effects of a Medication Teaching Regimen von Hageman, Paul T., Ventura, Marlene R.

Volltext

Strain relaxation in GaN grown on vicinal 4H-SiC(0001) substrates von Pernot, Julien, Bustarret, Etienne, Rudzinski, Mariusz, Hageman, Paul R, Larsen, Poul K

Volltext

Interrater reliabilities for two measures of nursing care quality von Ventura, Marlene R., Hageman, Paul T., Slakter, Malcolm J., Fox, Richard N.

Volltext