HVPE of scandium nitride on 6H–SiC(0 0 0 1) von Edgar, J.H., Bohnen, T., Hageman, P.R.

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Effect of growth polarity on vacancy defect and impurity incorporation in dislocation-free GaN von Tuomisto, F., Saarinen, K., Lucznik, B., Grzegory, I., Teisseyre, H., Suski, T., Porowski, S., Hageman, P. R., Likonen, J.

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Comparison of the DC and Microwave Performance of AlGaN/GaN HEMTs Grown on SiC by MOCVD With Fe-Doped or Unintentionally Doped GaN Buffer Layers von Desmaris, V., Rudzinski, M., Rorsman, N., Hageman, P.R., Larsen, P.K., Zirath, H., Rodle, T.C., Jos, H.F.F.

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GaN growth on single-crystal diamond substrates by metalorganic chemical vapour deposition and hydride vapour deposition von Hageman, P.R., Schermer, J.J., Larsen, P.K.

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n-type doping of wurtzite GaN with germanium grown with plasma-assisted molecular beam epitaxy von Hageman, P.R., Schaff, W.J., Janinski, Jacek, Liliental-Weber, Zuzanna

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Thick GaN layers grown by HVPE: Influence of the templates von Ashraf, H., Weyher, J.L., van Dreumel, G.W.G., Gzregorzyck, A., Hageman, P.R.

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Interface state density of free-standing GaN Schottky diodes von Faraz, S M, Ashraf, H, Imran Arshad, M, Hageman, P R, Asghar, M, Wahab, Q

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The effect of HVPE reactor geometry on GaN growth rate—experiments versus simulations von Dam, C.E.C., Grzegorczyk, A.P., Hageman, P.R., Dorsman, R., Kleijn, C.R., Larsen, P.K.

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Growth of GaN on nano-crystalline diamond substrates von van Dreumel, G.W.G., Buijnsters, J.G., Bohnen, T., ter Meulen, J.J., Hageman, P.R., van Enckevort, W.J.P., Vlieg, E.

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Properties and preparation of high quality, free-standing GaN substrates and study of spontaneous separation mechanism von Ashraf, H., Kudrawiec, R., Weyher, J.L., Serafinczuk, J., Misiewicz, J., Hageman, P.R.

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Method for HVPE growth of thick crack-free GaN layers von Dam, C.E.C., Grzegorczyk, A.P., Hageman, P.R., Larsen, P.K.

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Microphotoluminescence mapping of laterally overgrown GaN layers on patterned Si (111) substrates von Macht, L., Hageman, P. R., Haffouz, S., Larsen, P. K.

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Reduction of dislocation density in epitaxial GaN layers by overgrowth of defect-related etch pits von Weyher, J. L., Ashraf, H., Hageman, P. R.

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Defect formation in GaN grown on vicinal 4H-SiC (0001) substrates von Rudziński, M., Jezierska, E., Weyher, J. L., Macht, L., Hageman, P. R., Borysiuk, J., Rödle, T. C., Jos, H. F. F., Larsen, P. K.

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Influence of the nucleation layer morphology and epilayer structure on the resistivity of GaN films grown on c-plane sapphire by MOCVD von Grzegorczyk, A.P., Macht, L., Hageman, P.R., Weyher, J.L., Larsen, P.K.

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Influence of sapphire annealing in trimethylgallium atmosphere on GaN epitaxy by MOCVD von Grzegorczyk, A.P., Hageman, P.R., Weyher, J.L., Larsen, P.K.

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ScAlN nanowires: A cathodoluminescence study von Bohnen, T., Yazdi, G.R., Yakimova, R., van Dreumel, G.W.G., Hageman, P.R., Vlieg, E., Algra, R.E., Verheijen, M.A., Edgar, J.H.

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Influence of In on the surface morphology of HVPE grown GaN von Dam, C.E.C., Hageman, P.R., van Enckevort, W.J.P., Bohnen, T., Larsen, P.K.

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Thick GaN layers grown by hydride vapor-phase epitaxy: hetero- versus homo-epitaxy von Hageman, P.R, Kirilyuk, V, Corbeek, W.H.M, Weyher, J.L, Lucznik, B, Bockowski, M, Porowski, S, Müller, S

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Scaling up a horizontal HVPE reactor von Dam, C.E.C., Bohnen, T., Kleijn, C.R., Hageman, P.R., Larsen, P.K.

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