The electrical and material characterization of hafnium oxynitride gate dielectrics with TaN-gate electrode von Chang Seok Kang, Hag-Ju Cho, Rino Choi, Young-Hee Kim, Chang Yong Kang, Se Jong Rhee, Changhwan Choi, Akbar, M.S., Lee, J.C.

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Deposition of extremely thin (Ba,Sr)TiO3 thin films for ultra-large-scale integrated dynamic random access memory application von Hwang, Cheol Seong, Park, Soon Oh, Cho, Hag-Ju, Kang, Chang Suk, Kang, Ho-Kyu, Lee, Sang In, Lee, Moon Yong

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Depletion layer thickness and Schottky type carrier injection at the interface between Pt electrodes and (Ba, Sr)TiO3 thin films von Hwang, Cheol Seong, Lee, Byoung Taek, Kang, Chang Seok, Lee, Ki Hoon, Cho, Hag-Ju, Hideki, Horii, Kim, Wan Don, Lee, Sang In, Lee, Moon Yong

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The Impact of Stacked Cap Layers on Effective Work Function With HfSiON and SiON Gate Dielectrics von Hag Ju Cho, Hong Yu Yu, Chang, V.S., Akheyar, A., Jakschik, S., Conard, T., Hantschel, T., Delabie, A., Adelmann, C., Van Elshocht, S., Ragnarsson, L.-A., Schram, T., Absil, P., Biesemans, S.

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Electrical characterization and material evaluation of zirconium oxynitride gate dielectric in TaN-gated NMOSFETs with high-temperature forming gas annealing von Nieh, R.E., Chang Seok Kang, Hag-Ju Cho, Onishi, K., Rino Choi, Krishnan, S., Jeong Hee Han, Young-Hee Kim, Akbar, M.S., Lee, J.C.

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Structural and electrical properties of HfO2 with top nitrogen incorporated layer von Hag-Ju Cho, Chang Seok Kang, Onishi, K., Gopalan, S., Nieh, R., Rino Choi, Krishnan, S., Lee, J.C.

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Bonding states and electrical properties of ultrathin HfOxNy gate dielectrics von Kang, Chang Seok, Cho, Hag-Ju, Onishi, Katsunori, Nieh, Renee, Choi, Rino, Gopalan, Sundar, Krishnan, Sid, Han, Jeong H., Lee, Jack C.

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Area dependence of TDDB characteristics for HfO2 gate dielectrics von Young Hee Kim, Onishi, K., Chang Seok Kang, Hag-Ju Cho, Nieh, R., Gopalan, S., Choi, R., Jeong Han, Krishnan, S., Lee, J.C.

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Bias-temperature instabilities of polysilicon gate HfO2 MOSFETs von Onishi, K, Choi, Rino, Kang, Chang Seok, Cho, Hag-Ju, Kim, Young Hee, Nieh, R.E, Han, Jeong, Krishnan, S.A, Akbar, M.S, Lee, J.C

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Thickness dependence of Weibull slopes of HfO2 gate dielectrics von Young Hee Kim, Onishi, K., Chang Seok Kang, Hag-Ju Cho, Rino Choi, Krishnan, S., Akbar, M.S., Lee, J.C.

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Effects of deuterium anneal on MOSFETs with HfO2 gate dielectrics von Rino Choi, Onishi, K., Chang Seok Kang, Hag-Ju Cho, Kim, Y.H., Krishnan, S., Akbar, M.S., Lee, J.C.

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Investigation on Molybdenum and Its Conductive Oxides as p-Type Metal Gate Candidates von Li, Zilan, Schram, Tom, Witters, Thomas, Cho, Hag-Ju, O’Sullivan, Barry, Yamada, Naoki, Takaaki, Tsunoda, Hooker, Jacob, De Gendt, Stefan, De Meyer, Kristin

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Achieving conduction band-edge effective work functions by La2O3 capping of hafnium silicates von RAGNARSSON, Lars-Ake, CHANG, Vincent S, BIESEMANS, Serge, HONG YU YU, CHO, Hag-Ju, CONARD, Thierry, KAI MIN YIN, DELABIE, Annelies, SWERTS, Johan, SCHRAM, Tom, DE GENDT, Stefan

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Improvement of surface carrier mobility of HfO2 MOSFETs by high-temperature forming gas annealing von Onishi, K, Kang, Chang Seok, Choi, Rino, Cho, Hag-Ju, Gopalan, S, Nieh, R.E, Krishnan, S.A, Lee, J.C

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Performance of polysilicon gate HfO2 MOSFETs on [100] and [111] silicon substrates von Onishi, K., Chang Seok Kang, Rino Choi, Hag-Ju Cho, Young Hee Kim, Krishnan, S., Akbar, M.S., Lee, J.C.

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A comparative study on the electrical conduction mechanisms of (Ba0.5Sr0.5)TiO3 thin films on Pt and IrO2 electrodes von Hwang, Cheol Seong, Lee, Byoung Taek, Kang, Chang Seok, Kim, Jin Won, Lee, Ki Hoon, Cho, Hag-Ju, Horii, Hideki, Kim, Wan Don, Lee, Sang In, Roh, Young Bum, Lee, Moon Yong

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Improvement of leakage current characteristics of Ba0.5Sr0.5TiO3 films by N2O plasma surface treatment von Cho, Hag-Ju, Oh, Sejun, Kang, Chang Seok, Hwang, Cheol Seong, Lee, Byoung Taek, Lee, Ki Hoon, Horii, Hideki, Lee, Sang In, Lee, Moon Yong

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Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition von Cho, Hag-Ju, Lee, Hye Lan, Park, Hong Bae, Jeon, Taek Soo, Park, Seong Geon, Jin, Beom Jun, Kang, Sang Bom, Shin, Yu Gyun, Chung, U-In, Moon, Joo Tae

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Preparation and characterization of iridium oxide thin films grown by DC reactive sputtering von CHO, H.-J, HORII, H, HWANG, C. S, KIM, J.-W, KANG, C. S, LEE, B. T, LEE, S. I, KOH, Y. B, LEE, M. Y

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Fabrication and electrical characterization of Pt/(Ba,Sr)TiO3/Pt capacitors for ultralarge-scale integrated dynamic random access memory applications von PARK, S. O, HWANG, C. S, CHO, H.-J, KANG, C. S, KANG, H.-K, LEE, S. I, LEE, M. Y

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