The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapor deposition von Cederberg, J.G., Hafich, M.J., Biefeld, R.M., Palmisiano, M.

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Planar quantum transistor based on 2D–2D tunneling in double quantum well heterostructures von Simmons, J. A., Blount, M. A., Moon, J. S., Lyo, S. K., Baca, W. E., Wendt, J. R., Reno, J. L., Hafich, M. J.

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Common n- and p-contact for serial wiring of quaternary antimonide monolithic interconnected module thermophotovoltaic devices von PEAKE, G. M, CEDERBERG, J. G, HAFICH, M. J, KURTZ, S. R, BIEFELD, R. M, PALMASIANO, M. N

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Wet oxidation of AlxGa1−xAs: Temporal evolution of composition and microstructure and the implications for metal-insulator-semiconductor applications von Ashby, Carol I. H., Sullivan, John P., Newcomer, Paula P., Missert, Nancy A., Hou, Hong Q., Hammons, B. E., Hafich, Michael J., Baca, Albert G.

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Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure von JIANHUI CHEN, SITES, J. R, SPAIN, I. L, HAFICH, M. J, ROBINSON, G. Y

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Unipolar complementary circuits using double electron layer tunneling transistors von Moon, J. S., Simmons, J. A., Blount, M. A., Reno, J. L., Hafich, M. J.

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Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodes von Haase, M. A., Hafich, M. J., Robinson, G. Y.

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Wet thermal oxidation of AlAsSb lattice matched to InP for optoelectronic applications von Blum, O., Geib, K. M., Hafich, M. J., Klem, J. F., Ashby, C. I. H.

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Metal-sulfur-based air-stable passivation of GaAs with very low surface-state densities von Ashby, Carol I. H., Zavadil, Kevin R., Baca, Albert G., Chang, P.-C., Hammons, B. E., Hafich, M. J.

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Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers von Blum, O., Hafich, M. J., Klem, J. F., Lear, K. L., Chu, S. N. G.

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Double electron layer tunnelling transistor (DELTT) von Blount, M A, Simmons, J A, Moon, J S, Baca, W E, Reno, J L, Hafich, M J

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High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy von HAFICH, M. J, QUIGLEY, J. H, OWENS, R. E, ROBINSON, G. Y, DU LI, OTSUKA, N

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Electric-field-independent band gap superpositioning at 1.3 μm in an InGaAs–InAlAs strained-layer superlattice von Fritz, I. J., Hafich, M. J., Casalnuovo, S. A.

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High-speed, cascaded optical logic operations using programmable optical logic gate arrays von Bo Lu, Yin-Chen Lu, Cheng, J., Hafich, M.J., Klem, J., Zolper, J.C.

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Time-resolved carrier recombination dynamics of 1.3–1.8 μm broadband light emitting diode structures von Wang, Li, Lin, Shawn-Yu, Hafich, M. J., Fritz, I. J.

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Electrical and optical feedback in an InGaAs/InP light-amplifying optical switch (LAOS) von Feld, S.A., Beyette, F.R., Hafich, M.J., Lee, H.Y., Robinson, G.Y., Wilmsen, C.W.

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Growth of InP on Si substrates by molecular beam epitaxy von CRUMBAKER, T. E, LEE, H. Y, HAFICH, M. J, ROBINSON, G. Y

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Novel pseudoalloy approach to epitaxial growth of complex InGaAlAs multilayer structures von Fritz, I. J., Klem, J. F., Hafich, M. J., Howard, A. J.

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p -type ion-implantation doping of Al0.75Ga0.25Sb with Be, C, Mg, and Zn von Zolper, J. C., Klem, J. F., Howard, A. J., Hafich, M. J.

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Broad-band light-emitting diode for 1.4-2.0 μm using variable-composition InGaAs quantum wells von Fritz, I.J., Klem, J.F., Hafich, M.J., Howard, A.J., Hjalmarson, H.P.

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