The preparation of InGa(As)Sb and Al(Ga)AsSb films and diodes on GaSb for thermophotovoltaic applications using metal-organic chemical vapor deposition von Cederberg, J.G., Hafich, M.J., Biefeld, R.M., Palmisiano, M.

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Band offset of GaAs/In0.48Ga0.52P measured under hydrostatic pressure von JIANHUI CHEN, SITES, J. R, SPAIN, I. L, HAFICH, M. J, ROBINSON, G. Y

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Common n- and p-contact for serial wiring of quaternary antimonide monolithic interconnected module thermophotovoltaic devices von PEAKE, G. M, CEDERBERG, J. G, HAFICH, M. J, KURTZ, S. R, BIEFELD, R. M, PALMASIANO, M. N

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High quality quantum wells of InGaP/GaAs grown by molecular beam epitaxy von HAFICH, M. J, QUIGLEY, J. H, OWENS, R. E, ROBINSON, G. Y, DU LI, OTSUKA, N

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Double electron layer tunnelling transistor (DELTT) von Blount, M A, Simmons, J A, Moon, J S, Baca, W E, Reno, J L, Hafich, M J

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Internal photoemission and energy-band offsets in GaAs-GaInP p-I-N heterojunction photodiodes von Haase, M. A., Hafich, M. J., Robinson, G. Y.

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Growth of InP on Si substrates by molecular beam epitaxy von CRUMBAKER, T. E, LEE, H. Y, HAFICH, M. J, ROBINSON, G. Y

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Electron traps in InGaP grown by gas source molecular beam epitaxy von KIM, H. S, HAFICH, M. J, PATRIZI, G. A, NANDA, A, VOGT, T. J, WOODS, L. M, ROBINSON, G. Y

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High-speed, cascaded optical logic operations using programmable optical logic gate arrays von Bo Lu, Yin-Chen Lu, Cheng, J., Hafich, M.J., Klem, J., Zolper, J.C.

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The influence of dislocation density on electron mobility in InP films on Si von CRUMBAKER, T. E, HAFICH, M. J, ROBINSON, G. Y, JONES, K. M, AL-JASSIM, M. M, DAVIS, A, LORENZO, J. P

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TEM study of the effect of growth interruption in MBE of InGaP/GaAs superlattices von MAHALINGAM, K, NAKAMURA, Y, OTSUKA, N, LEE, H. Y, HAFICH, M. J, ROBINSON, G. Y

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Planar quantum transistor based on 2D–2D tunneling in double quantum well heterostructures von Simmons, J. A., Blount, M. A., Moon, J. S., Lyo, S. K., Baca, W. E., Wendt, J. R., Reno, J. L., Hafich, M. J.

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Electrical and optical feedback in an InGaAs/InP light-amplifying optical switch (LAOS) von Feld, S.A., Beyette, F.R., Hafich, M.J., Lee, H.Y., Robinson, G.Y., Wilmsen, C.W.

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Quantum-well structures of InAlP/InGaP grown by gas-source molecular-beam epitaxy von HAFICH, M. J, LEE, H. Y, ROBINSON, G. Y, LI, D, OTSUKA, N

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Nonresonant tunneling in InGaP/InAlP asymmetric double quantum wells von BUCCAFUSCA, O, CHILLA, J. L. A, MENONI, C. S, ROCCA, J. J, HAFICH, M. J, WOODS, L. M, ROBINSON, G. Y

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Optoelectronic exclusive-OR (XOR) gate von Beyette, F.R., Geib, K.M., Feld, S.A., Hafich, M.J., An, X., Robinson, G.Y., Wilmsen, C.W.

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Two wavelength optically controlled latch and AND gate von AN, X, GEIB, K. M, HAFICH, M. J, CRUMBAKER, T. E, SILVESTRE, P, BEYETTE, F. R, FELD, S. A, ROBINSON, G. Y, WILMSEN, C. W

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Highly compact integrated optical set-reset memory pixels for parallel processing arrays von An, X., Geib, K.M., Hafich, M.J., Beyette, F.R., Field, S.A., Robinson, G.Y., Wilmsen, C.W.

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Optically-cascaded, multistage switching operation of a multifunctional binary optical/optoelectronic switch von Bo Lu, Yin-Chen Lu, Alduino, A.C., Ortiz, G.G., Cheng, J., Hafich, M.J., Klem, J., Schneider, R.P., Zolper, J.C.

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InGaP/GaAs superlattices grown by gas-source molecular beam epitaxy von LEE, H. Y, CROOK, M. D, HAFICH, M. J, QUIGLEY, J. H, ROBINSON, G. Y, LI, D, OTSUKA, N

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