Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications von Daves, W., Krauss, A., Behnel, N., Häublein, V., Bauer, A., Frey, L.

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Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC von Ouennoughi, Z., Strenger, C., Bourouba, F., Haeublein, V., Ryssel, H., Frey, L.

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Isotopic study of mid-infrared vibrational modes in GaAs related to carbon and nitrogen impurities von Alt, H. Ch, Wagner, H. E., Glacki, A., Frank-Rotsch, Ch, Häublein, V.

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Lanthanum implantation for threshold voltage control in metal/high- k devices von Fet, A., Häublein, V., Bauer, A.J., Ryssel, H., Frey, L.

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Point contact current voltage measurements of 4H-SiC samples with different doping profiles von Kocher, M., Niebauer, M., Rommel, M., Haeublein, V., Bauer, A. J.

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Effective work function tuning in high- κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping von Fet, A., Häublein, V., Bauer, A. J., Ryssel, H., Frey, L.

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Enhancement of the Stability of Ti and Ni Ohmic Contacts to 4H-SiC with a Stable Protective Coating for Harsh Environment Applications von Daves, Walter, Krauss, Andreas, Häublein, Volker, Bauer, Anton J., Frey, Lothar

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Modeling of the effective work function instability in metal/high- κ dielectric stacks von Fet, A., Häublein, V., Bauer, A. J., Ryssel, H., Frey, L.

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Fluorine implantation for effective work function control in p -type metal-oxide-semiconductor high- k metal gate stacks von Fet, A., Häublein, V., Bauer, A. J., Ryssel, H., Frey, L.

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NMOS Logic Circuits Using 4H-SiC MOSFETs for High Temperature Applications von Ryssel, Heiner, Haeublein, Volker, Bauer, Anton J., Grieb, Michael, Schmitt, H., Schrey, Frederik F., Le-Huu, Martin, Frey, L.

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4H-SiC MOSFETs with a Stable Protective Coating for Harsh Environment Applications von Bauer, A.J., Daves, Walter, Frey, L., Häublein, V., Krauss, A.

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Influence of Annealing Parameters on Surface Roughness, Mobility and Contact Resistance of Aluminium Implanted 4H SiC von Schmitt, H., Haeublein, Volker, Bauer, Anton J., Frey, Lothar

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Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs von Mortet, Vincent, Cristiano, Fuccio, Lefebvre, Mathieu, Ryssel, Heiner, Strenger, Christian, Haeublein, Volker, Bauer, Anton J., Bedel-Pereira, Eléna, Beltran, Ana Maria, Schamm-Chardon, Sylvie, Erlbacher, Tobias

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Effective work function engineering by lanthanide ion implantation of metal-oxide semiconductor gate stacks von Fet, A., Häublein, V., Bauer, A. J., Ryssel, H.

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Comparative Study on Metallization and Passivation Materials for High Temperature Sensor Applications von Daves, Walter, Haeublein, Volker, Bauer, Anton J., Krauss, A., Le-Huu, Martin, Kronmüller, S., Frey, Lothar

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Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC von Ryssel, Heiner, Strenger, Christian, Bauer, Anton J., Haeublein, Volker, Rattmann, Gudrun, Temmel, Gerhard, Hürner, Andreas, Mitlehner, Heinz, Frey, Lothar

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Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC von Heckel, T., Bonse, C., Hürner, Andreas, Häublein, V., Erlbacher, T., Bauer, A.J., Kallinger, B., Mitlehner, H., Clemmer, G., Frey, L.

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Lanthanum implantation for threshold voltage control in metal/high-@@ik@ devices von Fet, A, Haeublein, V, Bauer, A J, Ryssel, H, Frey, L

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Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters von Laven, J.G., Schulze, H.-J., Häublein, V., Niedernostheide, F.-J., Schulze, H., Ryssel, H., Frey, L.

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Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium von Maier, R., Haeublein, V., Ryssel, H., Voellm, H., Feili, D., Seidel, H., Frey, L., Fraunhofer-Institut fuer Integrierte Systeme und Bauelementetechnologie, Lehrstuhl fuer Elektronische Bauelemente, Lehrstuhl fuer Mikromechanik, Mikrofluidik/ Mikroaktorik, Lehrstuhl fuer Elektronische Bauelemente

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