Load partitioning between ferrite and cementite during elasto-plastic deformation of an ultrahigh-carbon steel von Young, M.L., Almer, J.D., Daymond, M.R., Haeffner, D.R., Dunand, D.C.

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Analysis of TID Process, Geometry, and Bias Condition Dependence in 14-nm FinFETs and Implications for RF and SRAM Performance von King, M. P., Wu, X., Eller, M., Samavedam, S., Shaneyfelt, M. R., Silva, A. I., Draper, B. L., Rice, W. C., Meisenheimer, T. L., Felix, J. A., Zhang, E. X., Haeffner, T. D., Ball, D. R., Shetler, K. J., Alles, M. L., Kauppila, J. S., Massengill, L. W.

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Empirical Modeling of FinFET SEU Cross Sections Across Supply Voltage von Harrington, R. C., Kauppila, J. S., Maharrey, J. A., Haeffner, T. D., Sternberg, A. L., Zhang, E. X., Ball, D. R., Nsengiyumva, P., Bhuva, B. L., Massengill, L. W.

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On-Chip Measurement of Single-Event Transients in a 45 nm Silicon-on-Insulator Technology von Loveless, T. D., Kauppila, J. S., Jagannathan, S., Ball, D. R., Rowe, J. D., Gaspard, N. J., Atkinson, N. M., Blaine, R. W., Reece, T. R., Ahlbin, J. R., Haeffner, T. D., Alles, M. L., Holman, W. T., Bhuva, B. L., Massengill, L. W.

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The use of high energy X-rays from the Advanced Photon Source to study stresses in materials von Haeffner, D.R., Almer, J.D., Lienert, U.

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Impact of Single-Event Transient Duration and Electrical Delay at Reduced Supply Voltages on SET Mitigation Techniques von Maharrey, J. A., Kauppila, J. S., Harrington, R. C., Nsengiyumva, P., Ball, D. R., Haeffner, T. D., Zhang, E. X., Bhuva, B. L., Holman, W. T., Massengill, L. W.

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Synchrotron X-ray diffraction study of load partitioning during elastic deformation of bovine dentin von Deymier-Black, A.C., Almer, J.D., Stock, S.R., Haeffner, D.R., Dunand, D.C.

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Load partitioning in Al2O3-Al composites with three-dimensional periodic architecture von YOUNG, M. L, RAO, R, ALMER, J. D, HAEFFNER, D. R, LEWIS, J. A, DUNAND, D. C

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Single-Event Upset Characterization Across Temperature and Supply Voltage for a 20-nm Bulk Planar CMOS Technology von Kauppila, J. S., Kay, W. H., Haeffner, T. D., Rauch, D. L., Assis, T. R., Mahatme, N. N., Gaspard, N. J., Bhuva, B. L., Alles, M. L., Holman, W. T., Massengill, L. W.

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Electron distribution in water von Badyal, Y. S., Saboungi, M.-L., Price, D. L., Shastri, S. D., Haeffner, D. R., Soper, A. K.

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Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation von Jagannathan, S., Loveless, T. D., Zhang, E. X., Fleetwood, D. M., Schrimpf, R. D., Haeffner, T. D., Kauppila, J. S., Mahatme, N., Bhuva, B. L., Alles, M. L., Holman, W. T., Witulski, A. F., Massengill, L. W.

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Mapping the chemical states of an element inside a sample using tomographic x-ray absorption spectroscopy von Schroer, C. G., Kuhlmann, M., Günzler, T. F., Lengeler, B., Richwin, M., Griesebock, B., Lützenkirchen-Hecht, D., Frahm, R., Ziegler, E., Mashayekhi, A., Haeffner, D. R., Grunwaldt, J.-D., Baiker, A.

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Circuit-Level Layout-Aware Single-Event Sensitive-Area Analysis of 40-nm Bulk CMOS Flip-Flops Using Compact Modeling von Kauppila, J. S., Haeffner, T. D., Ball, D. R., Kauppila, A. V., Loveless, T. D., Jagannathan, S., Sternberg, A. L., Bhuva, B. L., Massengill, L. W.

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The association between humeral lengthening and clinical outcomes after reverse shoulder arthroplasty: a systematic review and meta-analysis von Haeffner, Brett D., Cueto, Robert J., Abdelmalik, Bishoy M., Hones, Keegan M., Wright, Jonathan O., Srinivasan, Ramesh C., King, Joseph J., Wright, Thomas W., Werthel, Jean-David, Schoch, Bradley S., Hao, Kevin A.

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Analysis of Single-Event Upsets and Transients in 22 nm Fully Depleted Silicon-On-Insulator Logic von D’Amico, Joseph V., Vibbert, Sean T., Watkins, Arthur C., Fahrenkrug, Benjamin C., Haeffner, Tim D., Ball, Dennis R., Sternberg, Andrew L., Alles, Michael L., Kauppila, Jeffrey S., Massengill, Lloyd W.

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Radiation Hardened by Design Subsampling Phase-Locked Loop Techniques in PD-SOI von Richards, Ellis W., Loveless, T. D., Kauppila, J. S., Haeffner, T. D., Holman, W. T., Massengill, L. W.

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Mitigating Total-Ionizing-Dose-Induced Threshold-Voltage Shifts Using Back-Gate Biasing in 22-nm FD-SOI Transistors von Watkins, A. C., Vibbert, S. T., D'Amico, J. V., Kauppila, J. S., Haeffner, T. D., Ball, D. R., Zhang, E. X., Warren, K. M., Alles, M. L., Massengill, L. W.

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Analysis of Bulk FinFET Structural Effects on Single-Event Cross Sections von Nsengiyumva, Patrick, Massengill, Lloyd W., Alles, Michael L., Bhuva, Bharat L., Ball, Dennis R., Kauppila, Jeffrey S., Haeffner, Timothy D., Holman, W. Timothy, Reed, Robert A.

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Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K von Haeffner, T. D., Reed, R. A., Schrimpf, R. D., Fleetwood, D. M., Keller, R. F., Jiang, R., Sierawski, B. D., Mccurdy, M. W., Zhang, E. X., Mohammed, R. W., Ball, D. R., Alles, M. L.

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In Situ Measurement of TID-Induced Leakage Using On-Chip Frequency Modulation von Vibbert, S. T., Watkins, A. C., D'Amico, J. V., McKinney, M. W., Vibbert, D. S., Zhang, E. X., Ball, D. R., Haeffner, T. D., Alles, M. L., Kauppila, J. S., Massengill, L. W.

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