Avalanche injection model for the lock-on effect in III-V power photoconductive switches von HANMIN ZHAO, HADIZAD, P, HUR, J. H, GUNDERSEN, M. A

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Manufacturable GaAs VFET for power switching applications von Eisenbeiser, K., Jenn-Hwa Huang, Salih, A., Hadizad, P., Pitts, B.

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A comparative study of Si- and GaAs-based devices for repetitive, high-energy, pulsed switching applications von HADIZAD, P, HUR, J. H, ZHAO, H, GUNDERSEN, M. A

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GaAs-based opto-thyristor for pulsed power applications von Hur, J.H., Hadizad, P., Hummel, S.G., Dzurko, K.M., Dapkus, P.D., Fetterman, H.R., Gundersen, M.A.

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Effects of hydrogen ion implantation on Al/Si Schottky diodes von YAPSIR, A. S, HADIZAD, P, LU, T.-M, CORELLI, J. C, LANFORD, W. A, BAKHRU, H

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A high-voltage optoelectronic GaAs static induction transistor von Hadizad, P., Hur, J.H., Zhao, H., Kaviani, K., Gundersen, M.A., Fetterman, H.R.

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Electrical characteristics of hydrogen implanted silicon Schottky diodes having large difference in metal work function von YAPSIR, A. S, LU, T.-M, HADIZAD, P, CORELLI, J. C, SUGERMAN, A, BAKHRU, H

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PtSi/n-type Si Schottky barrier height change by H + ion implantation near the interface region von Hadizad, P., Yapsir, A.S., Lu, T.-M., Corelli, J.C., Sugerman, A.

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GaAs rectifiers for power supply and motor control applications von Salih, A.S.M., Slocumb, R.W., Hadizad, P., Thero, C.

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"Green" process and productivity improvements in a GaAs light emitting diode wafer fab von Evans, K., AlCorn, T., Hadizad, P., Edwards, K., Fischer, R., Nielsen, D., Richie, F., Saha, N.

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Defect centers and changes in the electrical characteristics of Al/n-type Si Schottky diodes induced by hydrogen-ion implantations von YAPSIR, A. S, HADIZAD, P, LU, T.-M, CORELLI, J. C, CORBETT, J. W, LANFORD, W. A, BAKHRU, H

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High voltage GaAs rectifiers for advanced power conditioning applications von Hadizad, P., Salih, A., Shumate, J., Ommen, J.

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HIGH POWER GaAs STATIC INDUCTION TRANSISTOR von Hadizad, P., Baik, M., Kanjamala, P.A., Gundersen, M.A.

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High voltage GaAs rectifiers for high frequency, high power density switching applications von Hadizad, P., Ommen, J., Salih, A., Varadarajan, S., Slocumb, R., Robles, E., Wolk, M., Thero, C.

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GaAs optoelectronic static induction transistor for high frequency pulsed power switching von Hadizad, P., Hur, J.H., Zhao, H., Osinski, J., Dapkus, P.D., Gundersen, M.A., Fetterman, H.R.

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III-V compund based heterostructure opto-thyristor for pulsed power applications von Hur, J.H., Hadizad, P., Zhao, H., Hummel, S.G., Osinski, J.S., Dapkus, P.D., Fetterman, H.R., Gundersen, M.A.

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A GaAs-AlGaAs Based Thyristor von Hur, J H, Hadizad, P, Gundersen, M A, Fetterman, H R

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A HIGH VOLTAGE GaAs STATIC INDUCTION TRANSISTOR von Hadizad, P., Hur, J.H., Zhao, H., Kaviani, K., Gundersen, M.A., Fetterman, H.R.

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GaAs based opto-thyristor for pulsed power applications von Hur, J.H., Hadizad, P., Hummel, S.G., Dzurko, K.M., Dapkus, P.D., Gundersen, M.A., Fetterman, H.R.

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Hybrid Permeable-Base Transistors Based on an Indenofluorene Derivative von Serbena, José P. M., Hümmelgen, Ivo A., Hadizad, Tayebeh, Wang, Zhi Yuan

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