Incremental Enhancement of SEU Hardened 90 nm CMOS Memory Cell von Haddad, N F, Kelly, A T, Lawrence, R K, Bin Li, Rodgers, J C, Ross, J F, Warren, K M, Weller, R A, Mendenhall, M H, Reed, R A

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State and Angular Dependence of Single-Event Upsets in an Asymmetric RC-Hardened SRAM Using Deep Trench Capacitors von Alles, Michael L., Schrimpf, Ronald D., Massengill, Lloyd W., Ball, Dennis R., Kelly, Andrew T., Haddad, Nadim F., Rodgers, John C., Ross, Jason F., Chan, Ernesto, Raman, Ashok, Turowski, Marek

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Mitigation of Single-Event Charge Sharing in a Commercial FPGA Architecture von Kelly, Andrew T., Alles, Michael L., Ball, Dennis R., Massengill, Lloyd W., Ramaswamy, S., Haddad, Nadim F., Brown, Ronald D., Fleming, Patrick R., Chan, Ernesto, Ekanayake, Virantha, Kelly, Clinton W., Pelosi, Christopher, McMorrow, Dale, Buchner, Steven P., Warner, Jeffery H., Berg, Melanie D.

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The contribution of nuclear reactions to heavy ion single event upset cross-section measurements in a high-density SEU hardened SRAM von Warren, K.M., Weller, R.A., Mendenhall, M.H., Reed, R.A., Ball, D.R., Howe, C.L., Olson, B.D., Alles, M.L., Massengill, L.W., Schrimpf, R.D., Haddad, N.F., Doyle, S.E., McMorrow, D., Melinger, J.S., Lotshaw, W.T.

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Role of heavy-ion nuclear reactions in determining on-orbit single event error rates von Howe, C.L., Weller, R.A., Reed, R.A., Mendenhall, M.H., Schrimpf, R.D., Warren, K.M., Ball, D.R., Massengill, L.W., LaBel, K.A., Howard, J.W., Haddad, N.F.

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Effects of iron contamination in silicon on thin oxide breakdown and reliability characteristics von Henley, Worth B., Jastrzebski, Lubek, Haddad, Nadim F.

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Application of a pulsed laser for evaluation and optimization of SEU-hard designs [CMOS] von McMorrow, D., Melinger, J.S., Buchner, S., Scott, T., Brown, R.D., Haddad, N.F.

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Simultaneous single event charge sharing and parasitic bipolar conduction in a highly-scaled SRAM design von Olson, B.D., Ball, D.R., Warren, K.M., Massengill, L.W., Haddad, N.F., Doyle, S.E., McMorrow, D.

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Second generation (200MHz) RAD750 microprocessor radiation evaluation von Haddad, N. F., Brown, R. D., Ferguson, R., Kelly, A. T., Lawrence, R. K., Pirkl, D. M., Rodgers, J. C.

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Soft Error Sensitivities in 90 nm Bulk CMOS SRAMs von Lawrence, R.K., Ross, J.F., Haddad, N.F., Reed, R.A., Albrecht, D.R.

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The Path and Challenges to 90-nm Radiation-Hardened Technology von Haddad, N.F., Chan, E., Doyle, S., Kelly, A.T., Lawrence, R.K., Lawson, D., Patel, D., Ross, J.

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Method for implementing prompt dose mitigating capacitor von POLAVARAPU MURTY S, HADDAD NADIM F

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METHOD FOR IMPLEMENTING PROMPT DOSE MITIGATING CAPACITOR von POLAVARAPU MURTY S, HADDAD NADIM F

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Single-event upset immune static random access memory cell circuit von LAWRENCE REED K, HADDAD NADIM F

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Single-event upset immune static random access memory cell circuit von Lawrence, Reed K, Haddad, Nadim F

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Single-Event Upset Immune Static Random Access Memory Cell Circuit, System, And Method von LAWRENCE REED K, HADDAD NADIM F

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Single-event upset immune static random access memory cell circuit, system, and method von LAWRENCE REED K, HADDAD NADIM F

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Single-event upset immune static random access memory cell circuit, system, and method von Lawrence, Reed K, Haddad, Nadim F

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Considerations for the development of radiation resistant devices and VLSI circuits von HADDAD, N. F

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SINGLE-EVENT UPSET IMMUNE STATIC RANDOM ACCESS MEMORY CELL CIRCUIT, SYSTEM, AND METHOD von LAWRENCE REED K, HADDAD NADIM F

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