GaN-on-Si Power Technology: Devices and Applications von Chen, Kevin J., Haberlen, Oliver, Lidow, Alex, Chun Lin Tsai, Ueda, Tetsuzo, Uemoto, Yasuhiro, Yifeng Wu

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Threshold Voltage Instability in p-GaN Gate AlGaN/GaN HFETs von Sayadi, Luca, Iannaccone, Giuseppe, Sicre, Sebastien, Haberlen, Oliver, Curatola, Gilberto

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The Role of Silicon Substrate on the Leakage Current Through GaN-on-Si Epitaxial Layers von Sayadi, Luca, Iannaccone, Giuseppe, Haberlen, Oliver, Fiori, Gianluca, Tomberger, Manuel, Knuuttila, Lauri O., Curatola, Gilberto

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Influence of Buffer Carbon Doping on Pulse and AC Behavior of Insulated-Gate Field-Plated Power AlGaN/GaN HEMTs von Verzellesi, Giovanni, Morassi, Luca, Meneghesso, Gaudenzio, Meneghini, Matteo, Zanoni, Enrico, Pozzovivo, Gianmauro, Lavanga, Simone, Detzel, Thomas, Haberlen, Oliver, Curatola, Gilberto

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Hot electron effects in AlGaN/GaN HEMTs during hard-switching events von Minetto, Andrea, Modolo, Nicola, Meneghini, Matteo, Zanoni, Enrico, Sayadi, Luca, Sicre, Sébastien, Deutschmann, Bernd, Häberlen, Oliver

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Hot-Electron Effects in AlGaN/GaN HEMTs Under Semi-ON DC Stress von Minetto, Andrea, Deutschmann, Bernd, Modolo, Nicola, Nardo, Arianna, Meneghini, Matteo, Zanoni, Enrico, Sayadi, Luca, Prechtl, Gerhard, Sicre, Sebastien, Haberlen, Oliver

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Drain Field Plate Impact on the Hard-Switching Performance of AlGaN/GaN HEMTs von Minetto, Andrea, Modolo, Nicola, Sayadi, Luca, Koller, Christian, Ostermaier, Clemens, Meneghini, Matteo, Zanoni, Enrico, Prechtl, Gerhard, Sicre, Sebastien, Deutschmann, Bernd, Haberlen, Oliver

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On mechanisms governing AlN and AlGaN growth rate and composition in large substrate size planetary MOVPE reactors von Dauelsberg, Martin, Brien, Daniel, Rauf, Hendrik, Reiher, Fabian, Baumgartl, Johannes, Häberlen, Oliver, Segal, Alexander S., Lobanova, Anna V., Yakovlev, Eugene V., Talalaev, Roman A.

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On the Origin of the C} -Losses in Soft-Switching GaN-on-Si Power HEMTs von Guacci, Mattia, Heller, Morris, Neumayr, Dominik, Bortis, Dominik, Kolar, Johann W., Deboy, Gerald, Ostermaier, Clemens, Haberlen, Oliver

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On the Origin of the [Formula Omitted]-Losses in Soft-Switching GaN-on-Si Power HEMTs von Guacci, Mattia, Heller, Morris, Neumayr, Dominik, Bortis, Dominik, Kolar, Johann W, Deboy, Gerald, Ostermaier, Clemens, Haberlen, Oliver

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The 2018 GaN power electronics roadmap von Amano, H, Baines, Y, Beam, E, Borga, Matteo, Bouchet, T, Chalker, Paul R, Charles, M, Chen, Kevin J, Chowdhury, Nadim, Chu, Rongming, De Santi, Carlo, De Souza, Maria Merlyne, Decoutere, Stefaan, Di Cioccio, L, Eckardt, Bernd, Egawa, Takashi, Fay, P, Freedsman, Joseph J, Guido, L, Häberlen, Oliver, Haynes, Geoff, Heckel, Thomas, Hemakumara, Dilini, Houston, Peter, Hu, Jie, Hua, Mengyuan, Huang, Qingyun, Huang, Alex, Jiang, Sheng, Kawai, H, Kinzer, Dan, Kuball, Martin, Kumar, Ashwani, Lee, Kean Boon, Li, Xu, Marcon, Denis, März, Martin, McCarthy, R, Meneghesso, Gaudenzio, Meneghini, Matteo, Morvan, E, Nakajima, A, Narayanan, E M S, Oliver, Stephen, Palacios, Tomás, Piedra, Daniel, Plissonnier, M, Reddy, R, Sun, Min, Thayne, Iain, Torres, A, Trivellin, Nicola, Unni, V, Uren, Michael J, Van Hove, Marleen, Wallis, David J, Wang, J, Xie, J, Yagi, S, Yang, Shu, Youtsey, C, Yu, Ruiyang, Zanoni, Enrico, Zeltner, Stefan, Zhang, Yuhao

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From clusters to bulk: A relativistic density functional investigation on a series of gold clusters Aun, n=6,…,147 von Häberlen, Oliver D., Chung, Sai-Cheong, Stener, Mauro, Rösch, Notker

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System-level evaluation of dynamic effects in a GaN-based class-E power amplifier von Minetto, Andrea, Deutschmann, Bernd, Häberlen, Oliver, Curatola, Gilberto

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A SCALAR-RELATIVISTIC EXTENSION OF THE LINEAR COMBINATION OF GAUSSIAN-TYPE ORBITALS LOCAL DENSITY FUNCTIONAL METHOD - APPLICATION TO AUH, AUCL AND AU2 von HABERLEN, OD, ROSCH, N

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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE von PRECHER, GERHARD, HABERLEN OLIVER

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Density Functional Study on the Electronic Structure of Trioxorhenium Organyls von Köstlmeier, Sibylle, Häberlen, Oliver D, Rösch, Notker, Herrmann, Wolfgang A, Solouki, Bahman, Bock, Hans

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III-Nitride Bidirectional Device von Prechtl Gerhard, Haberlen Oliver, Ostermaier Clemens

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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE von Häberlen, Oliver, Prechtl, Gerhard

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SYSTEM AND METHOD FOR A GAN-BASED START-UP CIRCUIT von HÄBERLEN, Oliver, DEBOY, Gerald

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Group III-nitride-based enhancement mode transistor von OSTERMAIER CLEMENS, PRECHTL GERHARD, HABERLEN OLIVER

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