Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator von Seger, J., Hellström, P.-E., Lu, J., Malm, B. G., von Haartman, M., Östling, M., Zhang, S.-L.

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Impact of strain and channel orientation on the low-frequency noise performance of Si n- and pMOSFETs von von Haartman, M., Malm, B.G., Hellström, P.-E., Östling, M., Grasby, T.J., Whall, T.E., Parker, E.H.C., Lyutovich, K., Oehme, M., Kasper, E.

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Hole mobility in ultrathin body SOI pMOSFETs with SiGe or SiGeC channels von Hallstedt, J., von Haartman, M., Hellstrom, P.-E., Ostling, M., Radamsson, H.H.

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Low-frequency noise and Coulomb scattering in Si0.8Ge0.2 surface channel pMOSFETs with ALD Al2O3 gate dielectrics von Haartman, M. von, Westlinder, J., Wu, D., Malm, B.G., Hellström, P.-E., Olsson, J., Östling, M.

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Low-frequency noise in Si0.7Ge0.3 surface channel pMOSFETs with ALD HfO2/Al2O3 gate dielectrics von von Haartman, M., Wu, D., Malm, B.G., Hellström, P.-E., Zhang, S.-L., Östling, M.

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A novel strained Si0.7Ge0.3 surface-channel pMOSFET with an ALD TiN/Al2O3/HfAlOx/Al2O3 gate stack von Wu, D, Lindgren, A.-C, Persson, S, Sjoblom, G, von Haartman, M, Seger, J, Hellstrom, P.-E, Olsson, J, Blom, H.-O, Zhang, S.-L, Ostling, M, Vainonen-Ahlgren, E, Li, W.-M, Tois, E, Tuominen, M

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1/f noise in Si and Si/sub 0.7/Ge/sub 0.3/ pMOSFETs von von Haartman, M., Lindgren, A.C., Hellstrom, P.E., Malm, B.G., Shi-Li Zhang, Ostling, M.

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Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high- Kappa gate dielectrics and TiN gate von von Haartman, M, Malm, B G, Ostling, Mikael

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Ni-salicided CMOS with a poly-SiGe/Al2O3/HfO2/Al2O3 gate stack von WU, D, VON HAARTMAN, M, SEGER, J, TOIS, E, TUOMINEN, M, HELLSTRÖM, P.-E, ÖSTLING, M, ZHANG, S.-L

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Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-k gate dielectrics and TiN gate von VON HAARTMAN, Martin, GUNNAR MALM, B, ÖSTLING, Mikael

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Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/ gate dielectrics and TiN gate von von Haartman, M., Malm, B.G., Mikael Ostling

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Enhanced intrinsic gain (gm/gd) of PMOSFETs with a Si0.7Ge0.3 channel von LINDGREN, A.-C, HELLBERG, P.-E, VON HAARTMAN, M, WU, D, MENON, C, ZHANG, S.-L, ÖSTLING, M

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Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-[kappa] gate dielectrics and TiN gate von von Haartman, M, Malm, B.G, Mikael Ostling, Mikael Ostling

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Random telegraph signal noise in SiGe heterojunction bipolar transistors von von Haartman, Martin, Sandén, Martin, Östling, Mikael, Bosman, Gijs

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1/f noise in Si and Si0.7Ge0.3 pMOSFETs von von Haartman, M, Lindgren, A.C, Hellstrom, P.E, Malm, B.G, Zhang, Shi-Li, Ostling, M

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Lateral encroachment of Ni-silicides in the source/drain regionson ultrathin silicon-on-insulator von Seger, J., Hellström, P.-E., Lu, J., Malm, B. G., von Haartman, M., Östling, M., Zhang, S.-L.

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1/f noise in Si and Si/0.7/Ge/0.3/ pMOSFETs von von Haartman, M, Lindgren, A C, Hellstrom, P E, Malm, B G, Zhang, Shi-Li, Ostling, M

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Ni-salicided CMOS with a poly-SiGe/Al 2O 3/HfO 2/Al 2O 3 gate stack von Wu, D., von Haartman, M., Seger, J., Tois, E., Tuominen, M., Hellström, P.-E., Östling, M., Zhang, S.-L.

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Low-frequency noise and Coulomb scattering in Si0.8 Ge0.2 surface channel pMOSFET's with ALD Al2O3 gate dielectrics von von Haartman, M, Westlinder, J, Wu, D, Malm, BG, Hellström, P-E, Olsson, J, Östling, M

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Noise and Mobility Characteristics of Bulk and Fully Depleted SOI pMOSFETs using Si and SiGe channels von Östling, Mikael, Haållstedt, Julius, von Haartman, Martin, Hellström, Per-Erik, Radamson, Henry

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