Programmed Site‐Selective Palladium‐Catalyzed Arylation of Thieno[3,2‐b]thiophene von Ha Vuong, T. M., Villemin, Didier, Nguyen, Hung‐Huy, Le, Tin Thanh, Dang, Tung T., Nguyen, Hien

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Cover Feature: Programmed Site‐Selective Palladium‐Catalyzed Arylation of Thieno[3,2‐b]thiophene (Chem. Asian J. 21/2017) von Ha Vuong, T. M., Villemin, Didier, Nguyen, Hung‐Huy, Le, Tin Thanh, Dang, Tung T., Nguyen, Hien

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Application of short tandem repeats (STRs) in the preimplantation genetic diagnosis (PGD) of α-thalassemia von Ha Vuong, Vu Viet, Nguyen, Phuoc-Dung, Thi, Nha Nguyen, Le Thi, Phuong, Minh Nguyet, Dang Thi, Nguyen, Manh Ha, Tran, Hai Anh, Dang-Tran, Nhat-Minh, Bui, The-Hung, Tran, Thinh Huy, Van Ta, Thanh, Tran, Van-Khanh

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An improved electron and hole mobility model for general purpose device simulation von Darwish, M.N., Lentz, J.L., Pinto, M.R., Zeitzoff, P.M., Krutsick, T.J., Hong Ha Vuong

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Feasibility of combining short tandem repeats (STRs) haplotyping with preimplantation genetic diagnosis (PGD) in screening for beta thalassemia von Vuong, Vu Viet Ha, Tran, Thinh Huy, Nguyen, Phuoc-Dung, Thi, Nha Nguyen, Le Thi, Phuong, Minh Nguyet, Dang Thi, Nguyen, Manh-Ha, Bui, The-Hung, Ta, Thanh Van, Tran, Van-Khanh

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Sidegating in a GaAs MBE-grown HFET structure von Vuong, T.H.H., Gibson, W.C., Ahrens, R.E., Parsey, J.M.

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Use of transient enhanced diffusion to tailor boron out-diffusion von Vuong, H.-H., Xie, Y.-H., Frei, M.R., Hobler, G., Pelaz, L., Rafferty, C.S.

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BiCMOS technology for mixed-digital, analog, and RF applications von Rich, D.A., Carroll, M.S., Frei, M.R., Ivanov, T.G., Mastrapasqua, M., Moinian, S., Chen, A.S., King, C.A., Harris, E., De Blauwe, J., Hong-Ha Vuong, Archer, V., Ng, K.

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Technology CAD at AT&T von Lloyd, Peter, McAndrew, Colin C., McLennan, Michael J., Nassif, Sani R., Singhal, Kishore, Singhal, Kumud, Zeitzoff, Peter M., Darwish, Mohamed N., Haruta, Ken, Lentz, Janet L., Vuong, Hong-Ha, Pinto, Mark R., Rafferty, Conor S., Kizilyalli, Isik C.

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Metal capacitor stacked with a MOS capacitor to provide increased capacitance density von He, Canzhong, Schuler, John A, Sharpe, John M, Vuong, Hong-Ha

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Metal capacitor stacked with a MOS capacitor to provide increased capacitance density von VUONG HONG-HA, HE CANZHONG, SCHULER JOHN A, SHARPE JOHN M

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Metal capacitor stacked with a MOS capacitor to provide increased capacitance density von VUONG HONG-HA, HE CANZHONG, SCHULER JOHN A, SHARPE JOHN M

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