Highly responsive near-infrared photodetector with low dark current using graphene/germanium Schottky junction with Al2O3 interfacial layer von Kim, Cihyun, Yoo, Tae Jin, Chang, Kyoung Eun, Kwon, Min Gyu, Hwang, Hyeon Jun, Lee, Byoung Hun

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Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I–V method von Lee, Young Gon, Kang, Chang Goo, Cho, Chunhum, Kim, Yonghun, Hwang, Hyeon Jun, Lee, Byoung Hun

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Pulsed I–V Analysis of Slow Domain Switching in Ferroelectric Hf0.5Zr0.5O2 Using Graphene FETs von Hwang, Hyeon Jun, Kim, Seung Mo, Lee, Byoung Hun

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Fast transient charging at the graphene/SiO2 interface causing hysteretic device characteristics von Lee, Young Gon, Kang, Chang Goo, Jung, Uk Jin, Kim, Jin Ju, Hwang, Hyeon Jun, Chung, Hyun-Jong, Seo, Sunae, Choi, Rino, Lee, Byoung Hun

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Area and Device Count Efficient Binary Logic Circuits using Anti‐Ambipolar Switch Devices von Jun, Jae Hyeon, Lee, Yongsu, Lee, Hae‐Won, Kim, Minjae, Hwang, Hyeon Jun, Lee, Byoung Hun

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Dual-channel P-type ternary DNTT–graphene barristor von Lee, Yongsu, Kim, Seung-Mo, Kim, Kiyung, Kim, So-Young, Lee, Ho-In, Kwon, Heejin, Lee, Hae-Won, Kim, Chaeeun, Some, Surajit, Hwang, Hyeon Jun, Lee, Byoung Hun

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Mechanism of the effects of low temperature Al2O3 passivation on graphene field effect transistors von Kang, Chang Goo, Lee, Young Gon, Lee, Sang Kyung, Park, Eunji, Cho, Chunhum, Lim, Sung Kwan, Hwang, Hyeon Jun, Lee, Byoung Hun

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A graphene barristor using nitrogen profile controlled ZnO Schottky contacts von Hwang, Hyeon Jun, Chang, Kyoung Eun, Yoo, Won Beom, Shim, Chang Hoo, Lee, Sang Kyung, Yang, Jin Ho, Kim, So-Young, Lee, Yongsu, Cho, Chunhum, Lee, Byoung Hun

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Effects of multi-layer graphene capping on Cu interconnects von Kang, Chang Goo, Lim, Sung Kwan, Lee, Sangchul, Lee, Sang Kyung, Cho, Chunhum, Lee, Young Gon, Hwang, Hyeon Jun, Kim, Younghun, Choi, Ho Jun, Choe, Sun Hee, Ham, Moon-Ho, Lee, Byoung Hun

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Chemically doped graphene based ternary field effect transistors von Kim, So-Young, Kim, Min Beom, Hwang, Hyeon Jun, Allouche, Billal, Lee, Byoung Hun

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Facile process to clean PMMA residue on graphene using KrF laser annealing von Hwang, Hyeon Jun, Lee, Yongsu, Cho, Chunhum, Lee, Byoung Hun

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Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE MoS2 stack von Park, Woojin, Yang, Jin Ho, Kang, Chang Goo, Lee, Young Gon, Hwang, Hyeon Jun, Cho, Chunhum, Lim, Sung Kwan, Kang, Soo Cheol, Hong, Woong-Ki, Lee, Sang Kyung, Lee, Sangchul, Lee, Byoung Hun

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Reconfigurable Single-Layer Graphene Radio Frequency Antenna Device Capable of Changing Resonant Frequency von Hwang, Hyeon Jun, Kim, So-Young, Lee, Sang Kyung, Lee, Byoung Hun

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Performance enhancement of graphene/Ge near-infrared photodetector by modulating the doping level of graphene von Kwon, Min Gyu, Kim, Cihyun, Chang, Kyoung Eun, Yoo, Tae Jin, Kim, So-Young, Hwang, Hyeon Jun, Lee, Sanghan, Lee, Byoung Hun

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High-performance near-infrared photodetectors based on gate-controlled graphene–germanium Schottky junction with split active junction von Kim, Cihyun, Yoo, Tae Jin, Kwon, Min Gyu, Chang, Kyoung Eun, Hwang, Hyeon Jun, Lee, Byoung Hun

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Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition von Huang, Jie, Lucero, Antonio T., Cheng, Lanxia, Hwang, Hyeon Jun, Ha, Min-Woo, Kim, Jiyoung

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Ferroelectric polymer-gated graphene memory with high speed conductivity modulation von Hwang, Hyeon Jun, Yang, Jin Ho, Lee, Young Gon, Cho, Chunhum, Kang, Chang Goo, Kang, Soo Cheol, Park, Woojin, Lee, Byoung Hun

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Demonstration of p-type stack-channel ternary logic device using scalable DNTT patterning process von Lee, Yongsu, Kwon, Heejin, Kim, Seung-Mo, Lee, Ho-In, Kim, Kiyung, Lee, Hae-Won, Kim, So-Young, Hwang, Hyeon Jun, Lee, Byoung Hun

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Influence of extrinsic factors on accuracy of mobility extraction in graphene metal-oxide-semiconductor field effect transistors von Gon Lee, Young, Ji Kim, Yun, Goo Kang, Chang, Cho, Chunhum, Lee, Sangchul, Jun Hwang, Hyeon, Jung, Ukjin, Hun Lee, Byoung

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Graphene–ZnO:N barristor on a polyethylene naphthalate substrate von Hwang, Hyeon Jun, Heo, Sunwoo, Yoo, Won Beom, Lee, Byoung Hun

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