Etch characteristics of CoFeB thin films and magnetic tunnel junction stacks in a H2O/CH3OH plasma von Hwang, Su Min, Garay, Adrian, Lee, Il Hoon, Chung, Chee Won

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Low-thermal-budget (300 °C) ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors realized using high-pressure annealing von Kim, Si Joon, Jung, Yong Chan, Mohan, Jaidah, Kim, Hyo Jeong, Rho, Sung Min, Kim, Min Seong, Yoo, Jeong Gyu, Park, Hye Ryeon, Hernandez-Arriaga, Heber, Kim, Jin-Hyun, Kim, Hyung Tae, Choi, Dong Hyun, Jung, Joohye, Hwang, Su Min, Sejoon Kim, Harrison, Kim, Hyun Jae, Kim, Jiyoung

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A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films von Kim, Si Joon, Mohan, Jaidah, Kim, Harrison Sejoon, Hwang, Su Min, Kim, Namhun, Jung, Yong Chan, Sahota, Akshay, Kim, Kihyun, Yu, Hyun-Yong, Cha, Pil-Ryung, Young, Chadwin D., Choi, Rino, Ahn, Jinho, Kim, Jiyoung

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Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors von Kim, Si Joon, Mohan, Jaidah, Kim, Harrison Sejoon, Lee, Jaebeom, Hwang, Su Min, Narayan, Dushyant, Lee, Jae-Gil, Young, Chadwin D., Colombo, Luigi, Goodman, Gary, Wan, Alan S., Cha, Pil-Ryung, Summerfelt, Scott R., San, Tamer, Kim, Jiyoung

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High growth rate and high wet etch resistance silicon nitride grown by low temperature plasma enhanced atomic layer deposition with a novel silylamine precursor von Kim, Harrison Sejoon, Hwang, Su Min, Meng, Xin, Byun, Young-Chul, Jung, Yong Chan, Ravichandran, Arul Vigneswar, Sahota, Akshay, Kim, Si Joon, Ahn, Jinho, Lee, Lance, Zhou, Xiaobing, Hwang, Byung Keun, Kim, Jiyoung

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Low Temperature Thermal Atomic Layer Deposition of Aluminum Nitride Using Hydrazine as the Nitrogen Source von Jung, Yong Chan, Hwang, Su Min, Le, Dan N., Kondusamy, Aswin L. N., Mohan, Jaidah, Kim, Sang Woo, Kim, Jin Hyun, Lucero, Antonio T., Ravichandran, Arul, Kim, Harrison Sejoon, Kim, Si Joon, Choi, Rino, Ahn, Jinho, Alvarez, Daniel, Spiegelman, Jeff, Kim, Jiyoung

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A Novel Combinatorial Approach to the Ferroelectric Properties in HfxZr1−xO2 Deposited by Atomic Layer Deposition von Jung, Yong Chan, Mohan, Jaidah, Hwang, Su Min, Kim, Jin-Hyun, Le, Dan N., Sahota, Akshay, Kim, Namhoon, Hernandez-Arriaga, Heber, Veyan, Jean-Francois, Kim, Harrison Sejoon, Kim, Si Joon, Choi, Rino, Kim, Jiyoung

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Relaxation Induced by Imprint Phenomena in Low-Temperature (400 °C) Processed Hf0.5Zr0.5O2‑Based Metal-Ferroelectric-Metal Capacitors von Mohan, Jaidah, Jung, Yong Chan, Hernandez-Arriaga, Heber, Kim, Jin-Hyun, Onaya, Takashi, Sahota, Akshay, Hwang, Su Min, Le, Dan N, Kim, Jiyoung, Kim, Si Joon

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SELDI-TOF MS를 활용한 혈당강하 수수 종자의 펩타이드 프로파일링 및 특이 발현 펩타이드 선발 von 박세준(Sei Joon Park), 황수민(Su Min Hwang), 박준영(Jun Young Park), 고지연(Jee-Yeon Ko), 김태완(Tae Wan Kim)

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국내 수수 종자의 용해도별 단백질 함량 변이 von 박세준(Sei Joon Park), 박준영(Jun Young Park), 황수민(Su Min Hwang), 서명철(Myung Chul Seo), 김태완(Tae Wan Kim)

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수수종자의 펩타이드 분석을 위한 SELDI-TOF MS 최적화 연구 von 박세준(Sei Joon Park), 박준영(June Young Park), 이용호(Yong Ho Lee), 황수민(Su Min Hwang), 김아람(A Ram Kim), 고지연(Jee-Yeon Ko), 김태완(Tae Wan Kim)

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Inductive couple plasma reactive ion etching characteristics of TiO2 thin films von Garay, Adrian Adalberto, Hwang, Su Min, Chung, Chee Won

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Hollow Cathode Plasma-Enhanced Atomic Layer Deposition of Silicon Nitride Using Pentachlorodisilane von Meng, Xin, Kim, Harrison Sejoon, Lucero, Antonio T, Hwang, Su Min, Lee, Joy S, Byun, Young-Chul, Kim, Jiyoung, Hwang, Byung Keun, Zhou, Xiaobing, Young, Jeanette, Telgenhoff, Michael

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Investigation of the Physical Properties of Plasma Enhanced Atomic Layer Deposited Silicon Nitride as Etch Stopper von Kim, Harrison Sejoon, Meng, Xin, Kim, Si Joon, Lucero, Antonio T, Cheng, Lanxia, Byun, Young-Chul, Lee, Joy S, Hwang, Su Min, Kondusamy, Aswin L. N, Wallace, Robert M, Goodman, Gary, Wan, Alan S, Telgenhoff, Michael, Hwang, Byung Keun, Kim, Jiyoung

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Robust low-temperature (350 °C) ferroelectric Hf0.5Zr0.5O2 fabricated using anhydrous H2O2 as the ALD oxidant von Jung, Yong Chan, Kim, Jin-Hyun, Hernandez-Arriaga, Heber, Mohan, Jaidah, Hwang, Su Min, Le, Dan N., Sahota, Akshay, Kim, Harrison Sejoon, Kim, Kihyun, Choi, Rino, Nam, Chang-Yong, Alvarez, Daniel, Spiegelman, Jeffrey, Kim, Si Joon, Kim, Jiyoung

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High wet-etch resistance SiO2 films deposited by plasma-enhanced atomic layer deposition with 1,1,1-tris(dimethylamino)disilane von Hwang, Su Min, Kim, Harrison Sejoon, Le, Dan N., Sahota, Akshay, Lee, Jaebeom, Jung, Yong Chan, Kim, Sang Woo, Kim, Si Joon, Choi, Rino, Ahn, Jinho, Hwang, Byung Keun, Zhou, Xiaobing, Kim, Jiyoung

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Dry etching of palladium thin films in high density plasmas of CH3OH/Ar, C2H5OH/Ar, CH4/Ar, and CH4/O2/Ar gas mixtures von Lee, Jae Yong, Choi, Jae Sang, Cho, Doo Hyun, Hwang, Su Min, Chung, Chee Won

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Investigation on etching characteristics of Pd thin films using CH 3 COOH/Ar gas von Lee, Jae Yong, Hwang, Su Min, Choi, Jae Sang, Cho, Doo Hyeon, Chung, Chee Won

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Investigation on etching characteristics of Pd thin films using CH3COOH/Ar gas von Lee, Jae Yong, Hwang, Su Min, Choi, Jae Sang, Cho, Doo Hyeon, Chung, Chee Won

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Effect of O2 on etch characteristics of Co2MnSi thin films in CH4/O2/Ar gas mixture von Hwang, Su Min, Garay, Adrian Adalberto, Chung, Chee Won

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