The quasi-free-standing nature of graphene on H-saturated SiC(0001) von Speck, F., Jobst, J., Fromm, F., Ostler, M., Waldmann, D., Hundhausen, M., Weber, H. B., Seyller, Th

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Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001) von Fromm, F, Oliveira Jr, M H, Molina-Sánchez, A, Hundhausen, M, Lopes, J M J, Riechert, H, Wirtz, L, Seyller, T

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Raman spectra of epitaxial graphene on SiC(0001) von Röhrl, J., Hundhausen, M., Emtsev, K. V., Seyller, Th, Graupner, R., Ley, L.

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Looking behind the scenes: Raman spectroscopy of top-gated epitaxial graphene through the substrate von Fromm, F, Wehrfritz, P, Hundhausen, M, Seyller, Th

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Additional comments regarding the main article and the comment of “Pilger and Ceranna: The influence of periodic wind turbine noise on infrasound array measurements” (JSV, Vol. 388... von Holzheu, S., Hundhausen, M.

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Quasi-Freestanding Graphene on SiC(0001) von Röhrl, Jonas, Ostler, Markus, Jobst, Johannes, Seyller, Thomas, Hundhausen, Martin, Weber, Heiko B., Speck, Florian, Ley, Lothar, Waldmann, Daniel

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A multi-disciplinary analysis of the exceptional flood event of July 2021 in central Europe – Part 1: Event description and analysis von Mohr, Susanna, Ehret, Uwe, Kunz, Michael, Ludwig, Patrick, Caldas-Alvarez, Alberto, Daniell, James E, Ehmele, Florian, Feldmann, Hendrik, Franca, Mário J, Gattke, Christian, Hundhausen, Marie, Knippertz, Peter, Küpfer, Katharina, Mühr, Bernhard, Pinto, Joaquim G, Quinting, Julian, Schäfer, Andreas M, Scheibel, Marc, Seidel, Frank, Wisotzky, Christina

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Characterization of defects in silicon carbide by Raman spectroscopy von Hundhausen, M., Püsche, R., Röhrl, J., Ley, L.

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Future heat extremes and impacts in a convection-permitting climate ensemble over Germany von Hundhausen, Marie, Feldmann, Hendrik, Laube, Natalie, Pinto, Joaquim G

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A multi-disciplinary analysis of the exceptional flood event of July 2021 in central Europe – Part 2: Historical context and relation to climate change von Ludwig, Patrick, Ehmele, Florian, Franca, Mário J, Mohr, Susanna, Caldas-Alvarez, Alberto, Daniell, James E, Ehret, Uwe, Feldmann, Hendrik, Hundhausen, Marie, Knippertz, Peter, Küpfer, Katharina, Kunz, Michael, Mühr, Bernhard, Pinto, Joaquim G, Quinting, Julian, Schäfer, Andreas M, Seidel, Frank, Wisotzky, Christina

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Nanometer-scale field-induced oxidation of Si(111):H by a conducting-probe scanning force microscope: Doping dependence and kinetics von Teuschler, T., Mahr, K., Miyazaki, S., Hundhausen, M., Ley, L.

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Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes von Lindefelt, Ulf, Nilsson, Per Åke, Lendenmann, H., Bergman, Peder, Skytt, P.

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Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy von Püsche, R., Hundhausen, M., Ley, L., Semmelroth, K., Schmid, F., Pensl, G., Nagasawa, H.

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Growth of cubic SiC single crystals by the physical vapor transport technique von Semmelroth, K., Krieger, M., Pensl, G., Nagasawa, H., Püsche, R., Hundhausen, M., Ley, L., Nerding, M., Strunk, H.P.

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Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes von Lendenmann, H., Johansson, N., Bergman, Peder, Dahlquist, Fanny, Söderholm, R., Nilsson, Per Åke, Skytt, P.

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Graphene Layers on Silicon Carbide Studied by Raman Spectroscopy von Röhrl, Jonas, Hundhausen, Martin, Emtsev, Konstantin V., Seyller, Thomas, Ley, Lothar

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Deriving the kinetic parameters for Pt-silicide formation from temperature ramped in situ ellipsometric measurements von Stark, T, Grünleitner, H, Hundhausen, M, Ley, L

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Isotope-disorder-induced line broadening of phonons in the Raman spectra of SiC von Rohmfeld, S, Hundhausen, M, Ley, L, Schulze, N, Pensl, G

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Origin of the D peak in the Raman spectrum of microcrystalline graphite von Pócsik, Istvan, Hundhausen, Martin, Koós, Margit, Ley, Lothar

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Influence of Stacking Disorder on the Raman Spectrum of 3C-SiC von Rohmfeld, S., Hundhausen, M., Ley, L.

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