Demonstration of a Ge/GeSn/Ge Quantum-Well Microdisk Resonator on Silicon: Enabling High-Quality Ge(Sn) Materials for Micro- and Nanophotonics von Chen, Robert, Gupta, Suyog, Huang, Yi-Chiau, Huo, Yijie, Rudy, Charles W, Sanchez, Errol, Kim, Yihwan, Kamins, Theodore I, Saraswat, Krishna C, Harris, James S

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Passivation of multiple-quantum-well Ge0.97Sn0.03/Ge p-i-n photodetectors von Morea, Matthew, Brendel, Corinna E., Zang, Kai, Suh, Junkyo, Fenrich, Colleen S., Huang, Yi-Chiau, Chung, Hua, Huo, Yijie, Kamins, Theodore I., Saraswat, Krishna C., Harris, James S.

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High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform von Wang, Wei, Lei, Dian, Huang, Yi-Chiau, Lee, Kwang Hong, Loke, Wan-Khai, Dong, Yuan, Xu, Shengqiang, Tan, Chuan Seng, Wang, Hong, Yoon, Soon-Fatt, Gong, Xiao, Yeo, Yee-Chia

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Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain von Burt, Daniel, Joo, Hyo-Jun, Kim, Youngmin, Jung, Yongduck, Chen, Melvina, Luo, Manlin, Kang, Dong-Ho, Assali, Simone, Zhang, Lin, Son, Bongkwon, Fan, Weijun, Moutanabbir, Oussama, Ikonic, Zoran, Tan, Chuan Seng, Huang, Yi-Chiau, Nam, Donguk

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Temperature varying photoconductivity of GeSn alloys grown by chemical vapor deposition with Sn concentrations from 4% to 11 von Hart, John, Adam, Thomas, Kim, Yihwan, Huang, Yi-Chiau, Reznicek, Alexander, Hazbun, Ramsey, Gupta, Jay, Kolodzey, James

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Germanium-Tin (GeSn) P-Channel Fin Field-Effect Transistor Fabricated on a Novel GeSn-on-Insulator Substrate von Lei, Dian, Lee, Kwang Hong, Huang, Yi-Chiau, Wang, Wei, Masudy-Panah, Saeid, Yadav, Sachin, Kumar, Annie, Dong, Yuan, Kang, Yuye, Xu, Shengqiang, Wu, Ying, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia

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High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness von Yu-Shiang Huang, Ya-Jui Tsou, Chih-Hsiung Huang, Chih-Hao Huang, Huang-Siang Lan, Chee Wee Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Chu, Schubert S., Kuppurao, Satheesh

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Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing von Chen, Robert, Huang, Yi-Chiau, Gupta, Suyog, Lin, Angie C., Sanchez, Errol, Kim, Yihwan, Saraswat, Krishna C., Kamins, Theodore I., Harris, James S.

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High-speed and high-responsivity p-i-n waveguide photodetector at a 2 µm wavelength with a Ge0.92Sn0.08/Ge multiple-quantum-well active layer von Wang, Haibo, Zhang, Jishen, Zhang, Gong, Chen, Yue, Huang, Yi-Chiau, Gong, Xiao

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A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array Metasurface von Chen, Qimiao, Zhou, Hao, Xu, Shengqiang, Huang, Yi-Chiau, Wu, Shaoteng, Lee, Kwang Hong, Gong, Xiao, Tan, Chuan Seng

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Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells von Lin, Chung-Yi, Huang, Chih-Hsiung, Huang, Shih-Hsien, Chang, Chih-Chiang, Liu, C. W., Huang, Yi-Chiau, Chung, Hua, Chang, Chorng-Ping

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Dry-wet digital etching of Ge1−xSnx von Shang, Colleen K, Wang, Vivian, Chen, Robert, Gupta Suyog, Huang Yi-Chiau, Pao, James J, Huo Yijie, Sanchez, Errol, Kim Yihwan, Kamins, Theodore I, Harris, James S

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Single‐Crystalline Ge1−xSnx/Si p–n Heterojunction Photodiodes with Sn Compositions up to 10 von An, Shu, Huang, Yi‐Chiau, Wu, Chen‐Ying, Huang, Po‐Rei, Chang, Guo‐En, Lai, Junyu, Seo, Jung‐Hun, Kim, Munho

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Strain-relaxed GeSn-on-insulator (GeSnOI) microdisks von Burt, Daniel, Joo, Hyo-Jun, Jung, Yongduck, Kim, Youngmin, Chen, Melvina, Huang, Yi-Chiau, Nam, Donguk

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Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrate von Zhou, Hao, Xu, Shengqiang, Wu, Shaoteng, Huang, Yi-Chiau, Zhao, Peng, Tong, Jinchao, Son, Bongkown, Guo, Xin, Zhang, Daohua, Gong, Xiao, Tan, Chuan Seng

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Monolithic Waveguide Group IV Multiple-Quantum-Well Photodetectors and Modulators on 300-mm Si Substrates for 2-μm Wavelength Optoelectronic Integrated Circuit von Wang, Haibo, Zhang, Jishen, Zhang, Gong, Chen, Yue, Han, Kaizhen, Huang, Yi-Chiau, Gong, Xiao

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High-Performance Back-Illuminated Ge0.92Sn0.08/Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection von Wu, Shaoteng, Xu, Shengqiang, Zhou, Hao, Jin, Yuhao, Chen, Qimiao, Huang, Yi-Chiau, Zhang, Lin, Gong, Xiao, Tan, Chuan Seng

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Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge1―xSnx): A Novel Route for Ge1―xSnx Nanostructure Fabrication von GUPTA, Suyog, CHEN, Robert, HUANG, Yi-Chiau, KIM, Yihwan, SANCHEZ, Errol, HARRIS, James S, SARASWAT, Krishna C

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Strain relaxation of germanium-tin (GeSn) fins von Kang, Yuye, Huang, Yi-Chiau, Lee, Kwang Hong, Bao, Shuyu, Wang, Wei, Lei, Dian, Masudy-Panah, Saeid, Dong, Yuan, Wu, Ying, Xu, Shengqiang, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia

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Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band von Xu, Shengqiang, Han, Kaizhen, Huang, Yi-Chiau, Lee, Kwang Hong, Kang, Yuye, Masudy-Panah, Saeid, Wu, Ying, Lei, Dian, Zhao, Yunshan, Wang, Hong, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia

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