Direct bandgap GeSn nanowires enabled with ultrahigh tension from harnessing intrinsic compressive strain von Burt, Daniel, Joo, Hyo-Jun, Kim, Youngmin, Jung, Yongduck, Chen, Melvina, Luo, Manlin, Kang, Dong-Ho, Assali, Simone, Zhang, Lin, Son, Bongkwon, Fan, Weijun, Moutanabbir, Oussama, Ikonic, Zoran, Tan, Chuan Seng, Huang, Yi-Chiau, Nam, Donguk

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High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness von Yu-Shiang Huang, Ya-Jui Tsou, Chih-Hsiung Huang, Chih-Hao Huang, Huang-Siang Lan, Chee Wee Liu, Yi-Chiau Huang, Hua Chung, Chorng-Ping Chang, Chu, Schubert S., Kuppurao, Satheesh

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Material characterization of high Sn-content, compressively-strained GeSn epitaxial films after rapid thermal processing von Chen, Robert, Huang, Yi-Chiau, Gupta, Suyog, Lin, Angie C., Sanchez, Errol, Kim, Yihwan, Saraswat, Krishna C., Kamins, Theodore I., Harris, James S.

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Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells von Lin, Chung-Yi, Huang, Chih-Hsiung, Huang, Shih-Hsien, Chang, Chih-Chiang, Liu, C. W., Huang, Yi-Chiau, Chung, Hua, Chang, Chorng-Ping

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Monolithic Waveguide Group IV Multiple-Quantum-Well Photodetectors and Modulators on 300-mm Si Substrates for 2-μm Wavelength Optoelectronic Integrated Circuit von Wang, Haibo, Zhang, Jishen, Zhang, Gong, Chen, Yue, Han, Kaizhen, Huang, Yi-Chiau, Gong, Xiao

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Highly Selective Dry Etching of Germanium over Germanium-Tin (Ge1―xSnx): A Novel Route for Ge1―xSnx Nanostructure Fabrication von GUPTA, Suyog, CHEN, Robert, HUANG, Yi-Chiau, KIM, Yihwan, SANCHEZ, Errol, HARRIS, James S, SARASWAT, Krishna C

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GeSn lateral p-i-n photodetector on insulating substrate von Xu, Shengqiang, Huang, Yi-Chiau, Lee, Kwang Hong, Wang, Wei, Dong, Yuan, Lei, Dian, Masudy-Panah, Saeid, Tan, Chuan Seng, Gong, Xiao, Yeo, Yee-Chia

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Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layer von Paramahans Manik, Prashanth, Kesh Mishra, Ravi, Pavan Kishore, V., Ray, Prasenjit, Nainani, Aneesh, Huang, Yi-Chiau, Abraham, Mathew C., Ganguly, Udayan, Lodha, Saurabh

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GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p‑i‑n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform von Chen, Qimiao, Jung, Yongduck, Zhou, Hao, Wu, Shaoteng, Gong, Xiao, Huang, Yi-Chiau, Lee, Kwang Hong, Zhang, Lin, Nam, Donguk, Liu, Jian, Luo, Jun-Wei, Fan, Weijun, Tan, Chuan Seng

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Extracting site-specific reaction rates from steady state surface morphologies: Kinetic Monte Carlo simulations of aqueous Si(111) etching von Flidr, Jaroslav, Huang, Yi-Chiau, Newton, Theresa A., Hines, Melissa A.

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Growth and Etch Forms of Germanium Microcrystals on a Silicon Oxide Substrate von Huang, Yi-Chiau, Cai, Man-Ping, Zhou, Hongwen, Chung, Hua

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Etch Pit Formation on Germanium Alloys by in situ Gaseous Hydrogen Chloride Etching von Huang, Yi-Chiau, Wang, Charles, Kim, Yihwan

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(Invited) Group IV Epitaxy Applications for Enabling Advanced Device Scaling von Colombeau, Benjamin P, Bauer, Matthias, Wood, Bingxi Sun, Chung, Hua, Hebb, Jeffrey, Huang, Yi-Chiau, Tao, Xianzhi, Chopra, Saurabh, Dube, Abhishek, Chudzik, Michael, Chu, Schubert

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High-speed and high-responsivity p-i-n waveguide photodetector at a 2 mu m wavelength with a Ge0.92Sn0.08/Ge multiple-quantum-well active layer von Wang, Haibo, Zhang, Jishen, Zhang, Gong, Chen, Yue, Huang, Yi-Chiau, Gong, Xiao

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High-Performance Back-Illuminated Ge 0.92 Sn 0.08 /Ge Multiple-Quantum-Well Photodetector on Si Platform For SWIR Detection von Wu, Shaoteng, Xu, Shengqiang, Zhou, Hao, Jin, Yuhao, Chen, Qimiao, Huang, Yi-Chiau, Zhang, Lin, Gong, Xiao, Tan, Chuan Seng

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Defect-Induced Surface Morphological Evolution in Epitaxial Germanium Growth on Silicon von Huang, Yi-Chiau, Tao, Xianzhi, Jin, Miao, Wang, Charles, Sanchez, Errol

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Hole Mobility Enhancement in Compressively Strained Ge0.93Sn0.07 pMOSFETs von SUYOG GUPTA, HUANG, Yi-Chiau, YIHWAN KIM, SANCHEZ, Errol, SARASWAT, Krishna C

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High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µm von Zhou, Hao, Xu, Shengqiang, Lin, Yiding, Huang, Yi-Chiau, Son, Bongkwon, Chen, Qimiao, Guo, Xin, Lee, Kwang Hong, Goh, Simon Chun-Kiat, Gong, Xiao, Tan, Chuan Seng

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Ge 0.92 Sn 0.08 /Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate von Wu, Shaoteng, Zhang, Lin, Wan, Rongqiao, Zhou, Hao, Lee, Kwang Hong, Chen, Qimiao, Huang, Yi-Chiau, Gong, Xiao, Tan, Chuan Seng

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The site-specific reactivity of isopropanol in aqueous silicon etching: Controlling morphology with surface chemistry von Newton, Theresa A., Huang, Yi-Chiau, Lepak, Lori A., Hines, Melissa A.

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