A critical review of theory and progress in Ohmic contacts to p-type SiC von Huang, Lingqin, Xia, Mali, Gu, Xiaogang

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4H-SiC Ohmic contacts formation by MoS2 layer intercalation: A first-principles study von Huang, Lingqin, Pan, Sumin, Deng, Xuliang, Cui, Wenwen

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Fermi level unpinning of metal/p-type 4H-SiC interface by combination of sacrificial oxidation and hydrogen plasma treatment von Huang, Lingqin, Gu, Xiaogang

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Modulating Schottky barrier of metal/p-type 4H-SiC by thin insulator TiO2 layer intercalation von Huang, Lingqin, Xia, Mali, Ma, Yue, Gu, Xiaogang

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Simulation study on the influence of metal contact and MOS interface trap states on the electrical characteristics of SiC IGBT von Huang, Lingqin, Liu, Xinchao, Zhu, Jing, Wang, Yaohua

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Comparative efficacy of operative versus conservative treatment for Rockwood type III acromioclavicular joint dislocation: a systematic review and meta-analysis of randomized contr... von Xie, Chengxin, Fan, Shaohua, Chen, Lin, Huang, Lingqin, Chen, Cong, Luo, Hua

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Barrier properties and current conduction mechanism for metal contacts to lightly and highly doped p-type 4H-SiC von Huang, Lingqin, Ma, Yue, Pan, Sumin, Zhu, Jing, Gu, Xiaogang

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Effects of surface properties on barrier height and barrier inhomogeneities of platinum contacts to n-type 4H-SiC von Huang, Lingqin, Qin, Fuwen, Li, Shijuan, Wang, Dejun

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Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma von Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun

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Low resistance Ti Ohmic contacts to 4H-SiC by reducing barrier heights without high temperature annealing von Huang, Lingqin, Liu, Bingbing, Zhu, Qiaozhi, Chen, Suhua, Gao, Mingchao, Qin, Fuwen, Wang, Dejun

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Barrier inhomogeneities and interface states of metal/4H-SiC Schottky contacts von Huang, Lingqin, Geiod, Rechard, Wang, Dejun

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Chemical structure study of SiO2/4H-SiC (0001) interface transition region by angle-dependent x-ray photoelectron spectroscopy von Zhu, Qiaozhi, Huang, Lingqin, Li, Wenbo, Li, Shenmin, Wang, Dejun

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Publisher's Note: “Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma” [Appl. Phys. Lett. 104 , 202101 (2014)] von Liu, Bingbing, Huang, Lingqin, Zhu, Qiaozhi, Qin, Fuwen, Wang, Dejun

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Cleaning of SiC surfaces by low temperature ECR microwave hydrogen plasma von Huang, Lingqin, Zhu, Qiaozhi, Gao, Mingchao, Qin, Fuwen, Wang, Dejun

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Effects of sacrificial oxidation on surface properties of n- and p-type 4H-SiC: implications for metal contact behaviors von Huang, Lingqin, Gu, Xiaogang

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Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-type 4H-SiC von Huang, Lingqin, Wang, Dejun

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Negligible influence of C-related defect on the barrier properties of Ti3C2T2/SiC contacts: A first-principles study von Gu, Liuqiang, Huang, Lingqin, Wang, Junqiang, Gu, Xiaogang

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Modulating the Schottky barrier of MXenes/2D SiC contacts via functional groups and biaxial strain: a first-principles study von Huang, Lingqin, Deng, Xuliang, Pan, Sumin, Cui, Wenwen

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Effects of Low Temperature Electronic Cyclotron Resonance Hydrogen Plasma Treatment and Annealing on the Electrical Properties of Ti and Ni Contacts to 4H-SiC von Huang, Lingqin, Zhu, Qiaozhi, Gao, Mingchao, Qin, Fuwen, Wang, Dejun

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Modulating the Schottky barrier of MXenes/2D SiC contacts functional groups and biaxial strain: a first-principles study von Huang, Lingqin, Deng, Xuliang, Pan, Sumin, Cui, Wenwen

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