Enhanced photoelectronic performance of MoS2 nanosheets decorated TiO2 nanotube arrays via simultaneously promoting light absorption and charge separation von Hu, Xiaoqin, Hu, Zhifu, Wu, Peng, Huang, Jing, Wan, Junwei, Wang, Yang, Li, Zhen, Liu, Xueqin

Volltext

Harvesting the infrared part of solar light to promote charge transfer in Bi2S3/WO3 photoanode for enhanced photoelectrochemical water splitting von Zhao, Feifan, Sheng, Hexuan, Sun, Qipei, Wang, Jingnan, Liu, Qian, Hu, Zhifu, He, Bing, Wang, Yang, Li, Zhen, Liu, Xueqin

Volltext

Temperature-Dependent Access Resistances in Large-Signal Modeling of Millimeter-Wave AlGaN/GaN HEMTs von Zhao, Xiaodong, Xu, Yuehang, Jia, Yonghao, Wu, Yunqiu, Xu, Ruimin, Li, Jingqiang, Hu, Zhifu, Wu, Hongjiang, Dai, Wei, Cai, Shujun

Volltext

A 1-42 GHz GaN Distributed Amplifier With Adjustable Gain by Voltage-Controlled Switch von Hu, Zhifu, Zhang, Qijun, Ma, Kaixue

Volltext

A Broadband Voltage Variable Attenuator With High-Power Tolerance and Compact Size Based on Dual-Gate GaN HEMTs von Hu, Zhifu, Zhou, Shaohua, He, Ruicong, Zhang, Qijun

Volltext

An Improved Compact Large-Signal GaN HEMT Model for Switch Application von Hu, Zhifu, Zhang, Qijun, Ma, Kaixue, He, Ruicong, Feng, Feng

Volltext

Comparison of on-wafer calibrations for THz InP-based PHEMTs applications von 王志明 黄辉 胡志富 赵卓彬 王旭东 罗晓斌 刘军 杨宋源 吕昕

Volltext

Synergistically promoted charge separation/transfer in a ZnO nanosheet photoanode via the incorporation of multifunctional 3DrGO von He, Bing, Sheng, Hexuan, Liu, Qian, Hu, Zhifu, Wang, Jingnan, Hu, Xiaoqin, Yang, Yingkui, Wang, Yang, Li, Zhen, Liu, Xueqin

Volltext

A 71-77-GHz Switch-Based Single-Chip Front End in 0.13- \mu m GaN Technology von Hu, Zhifu, Ma, Kaixue, Liu, Yufei, He, Meilin, He, Ruicong

Volltext

Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTs von Wang, Zhiming, Zhao, Zhuobin, Hu, Zhifu, Huang, Hui, Cui, Yuxing, Sun, Xiguo, Mo, Jianghui, Li, Liang, Fu, Xingchang, Lü, Xin

Volltext

Electro-thermal model extraction of power GaN HEMT using I-V pulsed and DC measurements von Zhifu Hu, Xuebang Gao, Shujun Cai

Volltext

A circuit‐based neuro‐space mapping technique for small‐signal modeling of multi‐gate GaN HEMT switches von Hu, Zhifu, Na, Weicong, He, Meilin, He, Ruicong, Li, Jiahui, Zhang, Qijun, Ma, Kaixue

Volltext

Low-Current Design of GaAs Active Inductor for Active Filters Applications von Pantoli, Leonardo, Stornelli, Vincenzo, Leuzzi, Giorgio, Li, Hongjun, Hu, Zhifu

Volltext

On-chip active filter in GaAs technology for wireless communication systems von Pantoli, L., Stornelli, V., Leuzzi, G., Li, Hongjun, Hu, Zhifu

Volltext

Harvesting the infrared part of solar light to promote charge transfer in Bi 2 S 3 /WO 3 photoanode for enhanced photoelectrochemical water splitting von Zhao, Feifan, Sheng, Hexuan, Sun, Qipei, Wang, Jingnan, Liu, Qian, Hu, Zhifu, He, Bing, Wang, Yang, Li, Zhen, Liu, Xueqin

Volltext

Structural basis for specific flagellin recognition by t ~ILR protein NAIP5 von Xinru Yang, Fan Yang, Weiguang Wang, Guangzhong Lin, Zehan Hu, Zhifu Han, Yijun Qi, Liman Zhang, Jiawei Wang, Sen-Fang Sui, Jijie Chai

Volltext

Synergistically promoted charge separation/transfer in a ZnO nanosheet photoanode the incorporation of multifunctional 3DrGO von He, Bing, Sheng, Hexuan, Liu, Qian, Hu, Zhifu, Wang, Jingnan, Hu, Xiaoqin, Yang, Yingkui, Wang, Yang, Li, Zhen, Liu, Xueqin

Volltext

Structural basis for specific self-incompatibility response in Brassica von Ma, Rui, Han, Zhifu, Hu, Zehan, Lin, Guangzhong, Gong, Xinqi, Zhang, Heqiao, Nasrallah, June B, Chai, Jijie

Volltext

Finite Element Method Utilization of Disturbed State Concept Theory on Seepage or Anisotropy von Hu, Zhi Fu, Zheng, Jian Ye

Volltext

Design and implementation of 83-nm low noise InP-based InAlAs/InGaAs PHEMTsProject supported by the National Natural Science Foundation of China (No. 61275107) von Wang, Zhiming, Zhao, Zhuobin, Hu, Zhifu, Huang, Hui, Cui, Yuxing, Sun, Xiguo, Mo, Jianghui, Li, Liang, Fu, Xingchang, Lü, Xin

Volltext