High power AlGaN ultraviolet light emitters von Shatalov, Max, Sun, Wenhong, Jain, Rakesh, Lunev, Alex, Hu, Xuhong, Dobrinsky, Alex, Bilenko, Yuri, Yang, Jinwei, Garrett, Gregory A, Rodak, Lee E, Wraback, Michael, Shur, Michael, Gaska, Remis

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Therapeutic Effect of Renifolin F on Airway Allergy in an Ovalbumin-Induced Asthma Mouse Model In Vivo von Yang, Zhuya, Li, Xiaohong, Fu, Rongbing, Hu, Min, Wei, Yijie, Hu, Xuhong, Tan, Wenhong, Tong, Xiaoyun, Huang, Feng

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AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10 von Shatalov, Max, Sun, Wenhong, Lunev, Alex, Hu, Xuhong, Dobrinsky, Alex, Bilenko, Yuri, Yang, Jinwei, Shur, Michael, Gaska, Remis, Moe, Craig, Garrett, Gregory, Wraback, Michael

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A study protocol for investigating the sonographic characteristics of neonates with critical illness: an observational cohort study von Xiao, Tiantian, Fu, Yiyong, Li, Biao, Li, Yan, Zhang, Jingyi, Li, Huaying, Zhou, Xiaofeng, Zhong, Linping, Zhu, Lin, Qin, Gaoyang, Zou, Xin, Zhang, Xiaolong, Zheng, Minsheng, Zou, Pinli, Hu, Youning, Chen, Xia, Wang, Yuan, Wu, Nana, Gao, Shuqiang, Hu, Xuhong, Luo, Xiaohong, Ju, Rong

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Impact of temperature-dependent hole injection on low-temperature electroluminescence collapse in ultraviolet light-emitting diodes von Moe, Craig G., Garrett, Gregory A., Rotella, Paul, Shen, Hongen, Wraback, Michael, Shatalov, Max, Sun, Wenhong, Deng, Jianyu, Hu, Xuhong, Bilenko, Yuri, Yang, Jinwei, Gaska, Remis

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Large Chip High Power Deep Ultraviolet Light-Emitting Diodes von Shatalov, Max, Sun, Wenhong, Bilenko, Yuri, Sattu, Ajay, Hu, Xuhong, Deng, Jianyu, Yang, Jinwei, Shur, Michael, Moe, Craig, Wraback, Michael, Gaska, Remis

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Multilayered BCST/PZT thin films on GaN substrate for ultraviolet photodetector applications von Chen, Meiqin, Ding, Haoran, Wang, Yukun, Hou, Qianyu, Hu, Xuhong, Deng, Jianyu, Sun, Wenhong

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AlGaN Deep-Ultraviolet Light-Emitting Diodes von Zhang, Jianping, Hu, Xuhong, Lunev, Alex, Deng, Jianyu, Bilenko, Yuriy, Katona, Thomas M., Shur, Michael S., Gaska, Remis, Khan, M. Asif

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Improved detection performance of self-driven InZnO / p-GaN heterojunction UV photodetector by lanthanum doping von Ding, Haoran, Peng, Yi, Chen, Meiqin, Yufei, Yang, Wang, Nan, Hu, Xuhong, Deng, Jianyu, Sun, Wenhong

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Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2 Gate-Insulator and Zr-Based Ohmic Contacts von Hu, Xuhong, Hwang, Seongmo, Hussain, Kamal, Floyd, Richard, Mollah, Shahab, Asif, Fatima, Simin, Grigory, Khan, Asif

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Investigation of the Variation in Insertion Loss of Vertical Noise Barriers for High-speed Railways at Different Levels of Sound Transmission Loss von Song, Zhenan, Hu, Wenlin, Hu, Xuhong, Han, Jiaqi, Sui, Fusheng, He, Bin

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Insulating gate III-N heterostructure field-effect transistors for high-power microwave and switching applications von Khan, M.A., Simin, G., Jinwei Yang, Jianping Zhang, Koudymov, A., Shur, M.S., Gaska, R., Xuhong Hu, Tarakji, A.

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Deep Learning-Based Road Traffic Noise Annoyance Assessment von Wang, Jie, Wang, Xuejian, Yuan, Minmin, Hu, Wenlin, Hu, Xuhong, Lu, Kexin

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AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor von Simin, Grigory, Hu, Xuhong, Tarakji, Ahmad, Zhang, Jianping, Koudymov, Alexey, Saygi, Salih, Yang, Jinwei, Khan, Asif, Shur, Michael S., Gaska, Remis

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Low-loss high power RF switching using multifinger AlGaN/GaN MOSHFETs von Koudymov, A., Xuhong Hu, Simin, K., Simin, G., Ali, M., Yang, J., Asif Khan, M.

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Synthesis and herbicidal activities of novel 4-(3-trifluoromethylphenyl)-2H-pyridazin-3-one derivatives von Xu, Han, Hu, XuHong, Zhu, YouQuan, Zou, XiaoMao, Liu, Bin, Hu, FangZhong, Yang, HuaZheng

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Doped Barrier Al 0.65 Ga 0.35 N/Al 0.40 Ga 0.60 N MOSHFET With SiO 2 Gate-Insulator and Zr-Based Ohmic Contacts von Hu, Xuhong, Hwang, Seongmo, Hussain, Kamal, Floyd, Richard, Mollah, Shahab, Asif, Fatima, Simin, Grigory, Khan, Asif

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10 Milliwatt Pulse Operation of 265 nm AlGaN Light Emitting Diodes von Bilenko, Yuriy, Lunev, Alex, Hu, Xuhong, Deng, Jianyu, Katona, Thomas M, Zhang, Jianping, Gaska, Remis, Shur, Michael S, Sun, Wenhong, Adivarahan, Vinod, Shatalov, Maxim, Khan, Asif

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Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric von Mollah, Shahab, Gaevski, Mikhail, Chandrashekhar, MVS, Hu, Xuhong, Wheeler, Virginia, Hussain, Kamal, Mamun, Abdullah, Floyd, Richard, Ahmad, Iftikhar, Simin, Grigory, Eddy, Charles, Khan, Asif

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278 nm deep ultraviolet LEDs with 11% external quantum efficiency von Shatalov, M., Wenhong Sun, Lunev, A., Xuhong Hu, Dobrinsky, A., Bilenko, Y., Jinwei Yang, Shur, M., Gaska, R., Moe, C., Garrett, G., Wraback, M.

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