Low-Reverse Recovery Charge Superjunction MOSFET With a p-Type Schottky Body Diode von Lin, Zhi, Hu, Shengdong, Yuan, Qi, Zhou, Xichuan, Tang, Fang

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A Novel Asymmetric Trench SiC Metal-Oxide-Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance von Yu, Yiren, Cheng, Zijun, Hu, Yi, Lv, Ruiyi, Hu, Shengdong

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A SiC Planar MOSFET with an Embedded MOS-Channel Diode to Improve Reverse Conduction and Switching von Li, Ping, Guo, Jingwei, Hu, Shengdong, Lin, Zhi

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Design of GeSn-Based Heterojunction-Enhanced N-Channel Tunneling FET With Improved Subthreshold Swing and ON-State Current von Mingshan Liu, Yan Liu, Hongjuan Wang, Qingfang Zhang, Chunfu Zhang, Shengdong Hu, Yue Hao, Genquan Han

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Breakdown voltage improvement of enhancement mode AlGaN/GaN HEMT by a novel step-etched GaN buffer structure von Wu, Hao, Fu, Xiaojun, Wang, Yuan, Guo, Jingwei, Shen, Jingyu, Hu, Shengdong

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A Linear 126-dB Dynamic Range Light-to-Frequency Converter With Dark Current Suppression Upto 125 °C for Blood Oxygen Concentration Detection von Fang Tang, Zhou Shu, Kai Ye, Xichuan Zhou, Shengdong Hu, Zhi Lin, Bermak, Amine

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TCAD-Based Investigation of a 650 V 4H-SiC Trench MOSFET with a Hetero-Junction Body Diode von Wang, Ruoyu, Guo, Jingwei, Liu, Chang, Wu, Hao, Huang, Zhiyong, Hu, Shengdong

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A Novel AlGaN/Si3N4 Compound Buffer Layer HEMT with Improved Breakdown Performances von Guo, Jingwei, Hu, Shengdong, Li, Ping, Jiang, Jie, Wang, Ruoyu, Wang, Yuan, Wu, Hao

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Simulation Studies on Single-Event Effects and the Mechanisms of SiC VDMOS from a Structural Perspective von Liu, Tao, Wang, Yuan, Ma, Rongyao, Wu, Hao, Tao, Jingyu, Yu, Yiren, Cheng, Zijun, Hu, Shengdong

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Simulative Researching of a 1200V SiC Trench MOSFET With an Enhanced Vertical RESURF Effect von Yang, Han, Hu, Shengdong, Ran, Shenglong, Wang, Jian'an, Liu, Tao

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Reducing specific on-resistance for a trench SOI LDMOS with L-shaped P/N pillars von Guo, Jingwei, Hu, Shengdong, Wang, Jian'an, Guo, Gang, Liu, Chang, Yang, Han, Ran, Shenglong

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Radiation-Hardened CMOS Negative Voltage Reference for Aerospace Application von Fan Liu, Feng Yang, Han Wang, Xun Xiang, Xichuan Zhou, Shengdong Hu, Zhi Lin, Bermak, Amine, Fang Tang

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SiC trench MOSFET with heterojunction diode for low switching loss and high short-circuit capability von An, Junjie, Hu, Shengdong

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Eliminating Back-Gate Bias Effects in a Novel SOI High-Voltage Device Structure von Luo, Xiaorong, Fu, Daping, Lei, Lei, Zhang, Bo, Li, Zhaoji, Hu, Shengdong, Zhang, Zhengyuan, Feng, Zhicheng, Yan, Bin

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Experimental Demonstration of a 650-V Superjunction MOSFET With Dual Schottky Contacts for Fast Reverse Recovery von Li, Ping, Wang, Da, Lin, Zhi, Ma, Rongyao, Hu, Shengdong

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Comparative study on the short-circuit withstand capability between the superjunction and conventional field-stop IGBTs von Wang, Zhihao, Lin, Zhi, Hu, Shengdong, Zhou, Jianlin

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A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance von Yu, Yiren, Liu, Tao, Ma, Rongyao, Cheng, Zijun, Tao, Jingyu, Guo, Jingwei, Wu, Hao, Hu, Shengdong

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Analysis and design of hybrid Doherty-Outphasing power amplifier von Liu, Zhiqing, Dai, Zhijiang, Wang, Jingsong, Hu, Shengdong

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Analysis of TID Effects on the Threshold Voltage and Breakdown Voltage of 100-V Split-Gate Trench VDMOS von Wang, Yuan, Liu, Tao, Dai, Zhijiang, Tao, Jingyu, Qian, Lingli, Wu, Hao, Hu, Shengdong

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Optimized PNP ESD Protection Device With Adjustable Trigger and Holding Voltages for High-Voltage Applications von Qian, Lingli, Wang, Hongshen, Dai, Zhijiang, Yang, Haizhou, Li, Mingyu, Hu, Shengdong

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