Effect of Annealing on the Current-Voltage Characteristics of the Ag/GaZnO/FTO Structure von Aghamalyan, N. R., Papikyan, A. K., Hovsepyan, R. K., Petrosyan, S. I., Badalyan, G. R., Gambaryan, I. A., Kafadaryan, Y. A.

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On polaron stability in Ag-doped ZnO films von Sarkisian, A. R., Aghamalyan, N. R., Nersisyan, M. N., Petrosyan, S. I., Poghosyan, A. R., Ghambaryan, I. A., Badalyan, G. R., Hovsepyan, R. K., Kafadaryan, Y. A.

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Luminescent Properties of Nd3+ Ions in Pb(MoO4)x(WO4)1–x Crystals von Aghamalyan, N. R., Kostanyan, R. B., Hovsepyan, R. K.

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Influence of thermal annealing on optical and electrical properties of ZnO films prepared by electron beam evaporation von Aghamalyan, N R, Gambaryan, I A, Goulanian, E Kh, Hovsepyan, R K, Kostanyan, R B, Petrosyan, S I, Vardanyan, E S, Zerrouk, A F

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Absorption and reflection analysis of transparent conductive Ga-doped ZnO films von Aghamalyan, N R, Kafadaryan, E A, Hovsepyan, R K, Petrosyan, S I

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Suppression of photorefraction in hafnium doped lithium niobate crystals von Hovsepyan, R K, Poghosyan, A R, Vardanyan, E S

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Intensities of optical transitions of Nd3+ ions in Pb(MoO4)x(WO4)1–x crystals von Aghamalyan, N. R., Kostanyan, R. B., Hovsepyan, R. K., Muzhikyan, P. H., Nersisyan, M. N.

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Dependence of the Conductivity Mechanism and Dielectric Properties of Zinc Oxide Films on the Degree of Lithium Doping von Aghamalyan, N. R., Ayvazyan, H. L., Vartanyan, T. A., Kafadaryan, Y. A., Mnatsakanyan, H. G., Hovsepyan, R. K., Poghosyan, A. R.

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Room-temperature near infrared emission and green up-conversion in PbMoO sub(4):Er super(3+) crystals von Aghamalyan, N R, Demirkhanyan, G G, Hovsepyan, R K, Kostanyan, R B, Zargaryan, D G

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Memristors based on lithium doped ZnO films von Elbakyan, E. Y., Hovsepyan, R. K., Poghosyan, A. R.

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Investigation of photoelectrical properties of CdSe nanocrystals embedded in a SiO2 matrix von Kafadaryan, E A, Levichev, S, Pinto, S R C, Aghamalyan, N R, Hovsepyan, R K, Badalyan, G R, Chahboun, A, Rolo, A G, Gomes, M J M

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Electric Noise in Field-Effect Transistors Based on ZnO:Li Films von Hovsepyan, R. K., Aghamalyan, N. R., Kafadaryan, E. A., Arakelyan, A. A., Mnatsakanyan, G. G., Petrosyan, S. I.

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Field-Effect Transistor Based on Zinc Oxide Using Diffusion Technology von Hovsepyan, R. K., Aghamalyan, N. R., Kafadaryan, Y. A., Arakelyan, A. A., Mnatsakanyan, H. G., Petrosyan, S. I.

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Photoelectric Properties of Zinc Oxide Films Diffusion-Doped by Gallium and Lithium for Creation of Nonlinear Electric Elements von Hovsepyan, R. K., Aghamalyan, N. R., Kafadaryan, E. A., Mnatsakanyan, G. G., Arakelyan, A. A., Petrosyan, S. I., Badalyan, G. R.

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Room-temperature near infrared emission and green up-conversion in PbMoO4:Er3+ crystals von AGHAMALYAN, N. R, DEMIRKHANYAN, G. G, HOVSEPYAN, R. K, KOSTANYAN, R. B, ZARGARYAN, D. G

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Photoelectric and spectral properties of ZnO thin films von Aghamalyan, N R, Hovsepyan, R K, Poghosyan, A R, Von Roedern, B, Vardanyan, E S

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Far-infrared properties of sol–gel derived PbZr0.52Ti0.48O3 thin films on Pt-coated substrates von Kafadaryan, E A, Hovsepyan, R K, Khachaturova, A A, Aghamalyan, N R, Shirinyan, G O, Manukyan, A L, Vardanyan, R S, Hayrapetyan, A G, Grigoryan, S G, Vardanyan, E S

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Effect of lithium impurity on the opto-electrical properties of zinc oxide films von Aghamalyan, N. R., Goulanian, E. Kh, Hovsepyan, R. K., Vardanyan, E. S., Zerrouk, A. F.

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Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors von Aghamalyan, N. R., Aslanyan, T. A., Vardanyan, E. S., Kafadaryan, Y. A., Hovsepyan, R. K., Petrosyan, S. I., Poghosyan, A. R.

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Ferroelectric field-effect transistor based on ZnO:Li/LiNbO3 and ZnO:Li/TGS heterostructures for IR pyrodetectors von Aghamalyan, N. R., Aslanyan, T. A., Vardanyan, E. S., Kafadaryan, E. A., Hovsepyan, R. K., Petrosyan, S. I., Poghosyan, A. R.

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